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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHK100N65E-T1-GE3

Name: SIHK100N65E-T1-GE3
Brand: Vishay Siliconix
SKU: SIHK100N65E-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHK100N65E-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-PowerBSFN

Datasheet:: SIHK100N65E-T1-GE3.pdf

Description:: E SERIES POWER MOSFET 650 V (D-

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Product details

Overview

SIHK100N65E-T1-GE3 from Vishay Siliconix is a 650 V, 28 A N-channel enhancement-mode Power MOSFET in PowerPAK® 10 × 12 package, featuring 0.087 Ω R_DS(on) at V_GS = 10 V, 62 nC total gate charge, Kelvin source configuration, and 127 mJ single-pulse avalanche energy - designed for high-efficiency, high-voltage switching in telecom power supplies and PFC stages.

For engineers reviewing the SIHK100N65E-T1-GE3 datasheet, SIHK100N65E-T1-GE3 pinout, SIHK100N65E-T1-GE3 application, or SIHK100N65E-T1-GE3 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), reduced Co(er) of 90 pF, 100 V/ns dv/dt rating, and Kelvin-source layout enabling stable gate drive in hard-switched 520 V DC-link topologies.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for high-voltage SMPS and PFC applications, with a Kelvin source connection isolating the driver return path from high di/dt power return current to suppress gate noise and improve switching stability. Its 0.51 °C/W R_thJC enables high-power operation with minimal thermal penalty.

The device integrates an avalanche-rated body diode (trr = 362 ns typ., Q_rr = 5.0 μC) and supports unclamped inductive switching up to 127 mJ, making it suitable for continuous conduction mode (CCM) boost PFC and resonant LLC primary-side switches where robustness under transient overloads is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 520 V DC-link operation with 25 % margin for voltage spikes in industrial PFC and server PSUs
R_DS(on) typ.	0.087 Ω at V_GS = 10 V - enables <1.5 W conduction loss at 14 A, reducing heatsink requirements
Q_g max	62 nC - balances switching speed and gate drive loss in 100–300 kHz hard-switched converters
Co(er)	90 pF - lowers output capacitance energy loss (E_oss) during turn-on, improving light-load efficiency
E_AS	127 mJ - withstands repetitive unclamped inductive energy without failure in boost choke or transformer leakage scenarios
dv/dt rating	100 V/ns - ensures reliable operation in fast-rising edge environments like ZVS/ZCS topologies
R_thJC max	0.68 °C/W - allows >150 W continuous power dissipation with moderate heatsinking at T_C = 100 °C

Pinout & Package

Package: PowerPAK® 10 × 12 (TOLL), surface-mount, drain-connected copper tab on bottom side, RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires low-inductance gate loop due to Kelvin source architecture
Pin 2	Driver Source	Kelvin sense return for gate driver IC - decoupled from high-current source path to minimize gate ringing
Pins 3–8 + Tab	Power Source	Main current return path for load current; connected to PCB ground plane via large copper area for thermal and electrical performance
Tab (bottom)	Drain	High-voltage power terminal; electrically and thermally coupled to internal die drain; must be isolated from other layers

Key Features

Feature	Design Value
Kelvin source connection	Separates gate driver return from power source current path, eliminating common-source inductance-induced gate oscillation
Low effective output capacitance (Co(er))	90 pF enables lower turn-on switching loss and improved ZVS initiation in resonant converters
Avalanche energy rating	127 mJ single-pulse rating supports reliable operation under short-circuit or overload transients without derating
4th-generation E-series FOM	R_DS(on) × Q_g = 5.4 nC·Ω - optimized trade-off between conduction and switching losses for 650 V class
High dv/dt immunity	100 V/ns rating ensures stable turn-off behavior in high-slew-rate circuits such as phase-shifted full-bridge primaries

Applications

Server Power Supply	Telecom Rectifier
Use Scenario: Primary-side switch in 3.3 kW CCM boost PFC stage operating at 100 kHz with 520 V DC-link. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling full line-frequency rectified input and delivering regulated DC bus. Use Value: 0.087 Ω R_DS(on) and 62 nC Q_g enable >98.5 % PFC efficiency at full load while maintaining thermal margin below 125 °C junction temperature.	Use Scenario: Output rectification and isolation in 48 V/50 A telecom rectifier using active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage, driven with precise timing relative to primary switch. Use Value: Low Q_rr (5.0 μC) and fast trr (362 ns) minimize reverse recovery loss and cross-conduction risk during zero-voltage switching transitions.
Solar PV Inverter	Industrial Motor Drive
Use Scenario: DC-link switching in 10 kW string inverter H-bridge stage interfacing 1000 V PV array. IC Role / Device Role / Timing Role: High-side and low-side switch in three-phase inverter leg, subject to repetitive 600 V bus transients and high di/dt. Use Value: 127 mJ E_AS and 100 V/ns dv/dt rating ensure robustness against IGBT-like shoot-through faults and stray inductance-induced voltage overshoot.	Use Scenario: Inverter output stage in 15 kW HVAC variable-frequency drive operating at 4 kHz PWM with field-oriented control. IC Role / Device Role / Timing Role: Final power switching device delivering sinusoidal motor current with minimal harmonic distortion. Use Value: Kelvin source layout suppresses gate noise during high di/dt motor phase commutation, preventing false turn-on and improving system EMI profile.

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW CCM boost PFC stage operating at 100 kHz with 520 V DC-link.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling full line-frequency rectified input and delivering regulated DC bus.

Use Value: 0.087 Ω R_DS(on) and 62 nC Q_g enable >98.5 % PFC efficiency at full load while maintaining thermal margin below 125 °C junction temperature.

Use Scenario: Output rectification and isolation in 48 V/50 A telecom rectifier using active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage, driven with precise timing relative to primary switch.

Use Value: Low Q_rr (5.0 μC) and fast trr (362 ns) minimize reverse recovery loss and cross-conduction risk during zero-voltage switching transitions.

Solar PV Inverter

Industrial Motor Drive

Use Scenario: DC-link switching in 10 kW string inverter H-bridge stage interfacing 1000 V PV array.

IC Role / Device Role / Timing Role: High-side and low-side switch in three-phase inverter leg, subject to repetitive 600 V bus transients and high di/dt.

Use Value: 127 mJ E_AS and 100 V/ns dv/dt rating ensure robustness against IGBT-like shoot-through faults and stray inductance-induced voltage overshoot.

Use Scenario: Inverter output stage in 15 kW HVAC variable-frequency drive operating at 4 kHz PWM with field-oriented control.

IC Role / Device Role / Timing Role: Final power switching device delivering sinusoidal motor current with minimal harmonic distortion.

Use Value: Kelvin source layout suppresses gate noise during high di/dt motor phase commutation, preventing false turn-on and improving system EMI profile.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW70N65M5	650 V, 70 A, R_DS(on) = 0.065 Ω, Q_g = 95 nC, TO-247 package	Higher current rating but larger footprint and higher gate charge - better suited for lower-frequency, higher-current designs	Choose when thermal design permits TO-247 mounting and gate drive capability supports 95 nC charge
IXFH70N65X3	650 V, 70 A, R_DS(on) = 0.052 Ω, Q_g = 102 nC, TO-247 package, no Kelvin source	Lacks Kelvin source; higher Co(er) (120 pF); superior conduction but inferior high-speed noise immunity	Select when minimizing conduction loss dominates over gate noise sensitivity in fixed-frequency hard-switched topologies

Compared with STW70N65M5 and IXFH70N65X3, SIHK100N65E-T1-GE3 offers optimal balance of low Q_g, Kelvin source integrity, and compact PowerPAK® 10 × 12 footprint - ideal for space-constrained, high-frequency PFC and telecom rectifier designs where gate drive stability is critical.

Availability

SIHK100N65E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHK100N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, power density, and application-specific optimization.

The E Series Power MOSFET product line targets high-efficiency, high-voltage switching applications including PFC, telecom power, and industrial motor drives - engineered for low FOM, robust avalanche capability, and enhanced thermal performance in compact packages.

FAQ

What is the maximum continuous drain current rating for SIHK100N65E-T1-GE3 at 100 °C case temperature?

The SIHK100N65E-T1-GE3 has a continuous drain current rating of 18 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from its 28 A rating at T_C = 25 °C, based on a linear derating factor of 1.47 W/°C and R_thJC = 0.68 °C/W. Designers must verify junction temperature remains ≤150 °C under actual operating conditions using measured case temperature and power dissipation.

Does SIHK100N65E-T1-GE3 support Kelvin source connection, and how is it implemented physically?

Yes, SIHK100N65E-T1-GE3 implements a Kelvin source connection via separate terminals: Pin 2 serves as the driver source (low-current gate return), while Pins 3–8 and the exposed drain tab collectively form the power source (high-current return). This physical separation eliminates common-source inductance in the gate loop, directly reducing gate voltage ringing during high di/dt switching events - a key enabler for stable operation in fast-switching PFC and LLC converters.

What is the typical reverse recovery charge (Q_rr) of the body diode in SIHK100N65E-T1-GE3, and under what test conditions is it measured?

The typical reverse recovery charge (Q_rr) of the integrated body diode in SIHK100N65E-T1-GE3 is 5.0 μC, measured at T_J = 25 °C with I_F = I_S = 14 A, di/dt = 100 A/μs, and V_R = 25 V. This parameter is critical for evaluating commutation losses in synchronous rectification and bidirectional topologies; lower Q_rr reduces turn-off loss and improves efficiency in high-frequency operation.

Can SIHK100N65E-T1-GE3 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, SIHK100N65E-T1-GE3 is fully rated for repetitive unclamped inductive switching (UIS) with a single-pulse avalanche energy (E_AS) of 127 mJ, tested under V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.0 A. This rating confirms its ability to safely absorb inductive energy during fault conditions without degradation, supporting robust design in boost PFC, flyback, and resonant converter primary switches.

What is the gate-source threshold voltage range for SIHK100N65E-T1-GE3, and why does it matter for gate drive design?

The gate-source threshold voltage (V_GS(th)) for SIHK100N65E-T1-GE3 ranges from 3.0 V to 5.0 V at V_DS = V_GS and I_D = 250 μA. This range informs minimum gate drive voltage selection: driving above 10 V ensures full enhancement and low R_DS(on), while avoiding marginal turn-on near 5 V prevents partial conduction and excessive heating. Gate drivers must deliver ≥12 V with sufficient peak current to overcome 62 nC Q_g within required switching times.

SIHK100N65E-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: 8-PowerBSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2137 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 184W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK®10 x 12

SIHK100N65E-T1-GE3 FAQ

1.How can I place an order for SIHK100N65E-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHK100N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHK100N65E-T1-GE3 reliable?

The price and inventory of SIHK100N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHK100N65E-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIHK100N65E-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHK100N65E-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHK100N65E-T1-GE3?

SIHK100N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHK100N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHK100N65E-T1-GE3?

For technical support, including SIHK100N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHK100N65E-T1-GE3 requirements.

6.How does Aetrix verify that SIHK100N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHK100N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHK100N65E-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIHK100N65E-T1-GE3?

All SIHK100N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHK100N65E-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHK100N65E-T1-GE3 part is unused and in its original packaging.

Return procedure for SIHK100N65E-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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