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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP022N12NM6AKSA1

Name: IPP022N12NM6AKSA1
Brand: Infineon Technologies
SKU: IPP022N12NM6AKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP022N12NM6AKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP022N12NM6AKSA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPP022N12NM6AKSA1 from Infineon Technologies is an N-channel, normal-level 120 V OptiMOSTM 6 power MOSFET in PG-TO220-3 package, featuring 2.2 mΩ max R_DS(on), 203 A continuous drain current, 412.1 nC reverse recovery charge (Q_rr) at 1000 A/µs, 175 °C operating temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-frequency synchronous rectification in server VRMs and telecom DC-DC converters.

For engineers reviewing the IPP022N12NM6AKSA1 datasheet, IPP022N12NM6AKSA1 pinout, IPP022N12NM6AKSA1 application, or IPP022N12NM6AKSA1 equivalent, key selection criteria include low Q_rr for reduced switching loss in hard-switched topologies, robust avalanche energy rating (1532 mJ), thermal resistance (R_thJC = 0.38 °C/W), and industrial qualification per JEDEC standards.

Technical Context

This MOSFET employs Infineon's 6th-generation silicon process with trench-gate superjunction architecture to achieve ultra-low on-resistance while maintaining fast switching dynamics. Its gate threshold voltage (2.6–3.6 V) enables direct drive from standard 5 V or 3.3 V logic controllers without level-shifting.

The device integrates a low-V_SD (0.88–1.0 V typ.) body diode with controlled Q_rr and t_rr, supporting efficient synchronous rectification and ZVS operation in LLC resonant converters. Thermal design is enabled by its low junction-to-case resistance and 175 °C rated silicon die.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V input bus designs with ≥2× voltage margin for transient spikes in telecom and server power supplies.
R_DS(on), max	2.2 mΩ - delivers <1.1 W conduction loss at 100 A, enabling high-efficiency primary-side switching in 1 kW+ PSUs.
Q_rr	412.1 nC - reduces turn-on loss and EMI in hard-switched converters operating at 100–500 kHz.
I_D, cont.	203 A @ T_C = 25 °C - supports high-current output stages in multiphase buck regulators with minimal paralleling.
E_AS	1532 mJ - withstands single-pulse inductive energy surges without failure, critical for motor drive and UPS applications.
R_thJC	0.38 °C/W - allows >395 W power dissipation with modest heatsinking, simplifying thermal management in compact enclosures.
Q_G	113 nC - enables fast switching with moderate gate driver strength (e.g., 2 A peak), reducing driver cost and layout complexity.

Pinout & Package

Delivered in PG-TO220-3 package with isolated tab (Drain-connected), standard through-hole mounting, and RoHS/halogen-free lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤20 V gate-source voltage; low gate resistance (0.55–1.65 Ω) minimizes ringing in high-dV/dt environments.
Pin 2 / Tab	Drain	Main high-side current path; electrically connected to metal tab for low-inductance, high-current routing and thermal conduction to heatsink.
Pin 3	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations; forms return path for body diode conduction.

Key Features

Feature	Design Value
Optimized FOM (Q_G × R_DS(on))	252 pC·Ω - balances switching speed and conduction loss for 300–1000 kHz operation in high-density DC-DC converters.
Low Q_rr with controlled t_rr	412.1 nC / 78 ns - suppresses voltage overshoot during diode commutation, reducing snubber requirements and improving reliability.
175 °C operation with industrial qualification	JEDEC JESD47 qualified - ensures long-term stability under sustained thermal stress in enclosed industrial power modules.
High avalanche energy rating	1532 mJ - eliminates need for external clamping in inductive load switching, lowering BOM count in motor gate drivers.
Pb-free, halogen-free construction	Complies with IEC61249-2-21 - meets global environmental compliance mandates without sacrificing thermal or electrical performance.

Applications

Server Voltage Regulator Modules

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage from 12 V or 48 V input.

IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous rectification topology operating at 500–1000 kHz.

Use Value: 2.2 mΩ R_DS(on) and 113 nC Q_G enable >95% efficiency at 200 A output while minimizing gate driver overhead and thermal footprint.

Use Scenario: Isolated or non-isolated step-down converter delivering 12 V/30 A from 48 V telecom distribution bus.

IC Role / Device Role / Timing Role: Low-loss secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: Low Q_rr (412.1 nC) and fast t_rr (78 ns) reduce reverse recovery loss and EMI, improving system-level efficiency by up to 1.2% versus legacy MOSFETs.

Industrial Uninterruptible Power Supplies

Motor Drive Half-Bridge Stages

Use Scenario: Bidirectional DC-DC stage in UPS battery charging/inverter interface handling 400 V DC link transients.

IC Role / Device Role / Timing Role: High-reliability switching element in H-bridge configuration with repetitive avalanche stress.

Use Value: 1532 mJ E_AS and 175 °C rating ensure robustness against line surges and short-circuit events without derating.

Use Scenario: Half-bridge leg in 3-phase BLDC or PMSM inverter driving 5–10 kW industrial pumps or compressors.

IC Role / Device Role / Timing Role: Low-R_DS(on) power switch with integrated body diode for freewheeling current commutation.

Use Value: 0.88 V V_SD and controlled Q_rr minimize conduction loss and shoot-through risk during PWM dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N12F7AG	120 V, 2.3 mΩ R_DS(on), 115 nC Q_G, but higher Q_rr (520 nC) and lower T_j rating (175 °C same, but no JEDEC industrial validation).	Less suitable for high-di/dt synchronous rectification where Q_rr dominates loss; acceptable in lower-frequency motor drives.	Select when gate drive strength is constrained and Q_rr sensitivity is low; verify thermal margin with R_thJC = 0.45 °C/W.
IXFH220N12X3	120 V, 2.1 mΩ R_DS(on), 128 nC Q_G, 380 nC Q_rr, but TO-247-3 package with higher parasitic inductance and no halogen-free certification.	Better for discrete high-power amplifiers than dense multi-phase VRMs due to larger footprint and less optimized FOM.	Prefer for legacy designs requiring TO-247 mechanical compatibility; avoid in space-constrained telecom modules.

Compared with STL220N12F7AG and IXFH220N12X3, IPP022N12NM6AKSA1 offers superior Q_rr/R_DS(on) trade-off, JEDEC-qualified industrial reliability, and PG-TO220-3 thermal efficiency-making it optimal for high-frequency, high-reliability power conversion where board area and thermal headroom are constrained.

Availability

IPP022N12NM6AKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial UPS systems requiring stable component supply, full traceability, and long-lifecycle support.

Supply support for IPP022N12NM6AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certifications.

This part belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial power supplies where low R_DS(on), low Q_rr, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IPP022N12NM6AKSA1 at 100 °C case temperature?

The maximum continuous drain current is 156 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the Rev. 2.0 datasheet. This reflects thermal de-rating from the 203 A rating at 25 °C, ensuring safe operation under sustained high-temperature conditions in enclosed power modules.

Does IPP022N12NM6AKSA1 have a fully rated avalanche capability, and what is the test condition?

Yes-it is fully rated for single-pulse avalanche with E_AS = 1532 mJ at I_AS = 100 A and R_GS = 25 Ω, per Table 2. The test uses a standardized inductive load circuit with defined pulse width and gate resistance to validate ruggedness under unclamped inductive switching stress.

Can IPP022N12NM6AKSA1 be used in synchronous rectification without external Schottky diodes?

Yes-the integrated body diode has V_SD = 0.88–1.0 V and Q_rr = 412.1 nC at 1000 A/µs, enabling reliable synchronous rectification in forward, LLC, and phase-shifted full-bridge topologies without parallel Schottky diodes, provided gate timing avoids shoot-through.

What is the gate plateau voltage, and why does it matter for drive circuit design?

The gate plateau voltage is 4.9 V (typical), measured during Miller region transition at V_DD = 60 V and I_D = 50 A. This value determines the minimum gate drive voltage needed to sustain full enhancement and informs selection of gate driver UVLO thresholds and bootstrap capacitor sizing in high-side configurations.

IPP022N12NM6AKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Ta), 203A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 141 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11000 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 395W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP022N12NM6AKSA1 FAQ

1.How can I place an order for IPP022N12NM6AKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP022N12NM6AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP022N12NM6AKSA1 reliable?

The price and inventory of IPP022N12NM6AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP022N12NM6AKSA1 is usually 5 days.

3.What payment methods are accepted for IPP022N12NM6AKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP022N12NM6AKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP022N12NM6AKSA1?

IPP022N12NM6AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP022N12NM6AKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP022N12NM6AKSA1?

For technical support, including IPP022N12NM6AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP022N12NM6AKSA1 requirements.

6.How does Aetrix verify that IPP022N12NM6AKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP022N12NM6AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP022N12NM6AKSA1 meets industry standards.

7.What is the process for return or replacement of IPP022N12NM6AKSA1?

All IPP022N12NM6AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP022N12NM6AKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP022N12NM6AKSA1 part is unused and in its original packaging.

Return procedure for IPP022N12NM6AKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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