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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK35A65W5,S5X

Name: TK35A65W5,S5X
Brand: Toshiba Semiconductor and Storage
SKU: TK35A65W5,S5X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK35A65W5,S5X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK35A65W5,S5X.pdf

Description:: MOSFET N-CH 650V 35A TO220SIS

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Product details

Overview

TK35A65W5 from Toshiba is a silicon N-channel MOSFET using DTMOS™ Super Junction technology, designed for high-voltage switching in offline power supplies. It delivers 650 V V_DSS, 35 A continuous drain current, and low R_DS(ON) of 0.08 Ω (typ.) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and server SMPS.

For engineers reviewing the TK35A65W5 datasheet, TK35A65W5 pinout, TK35A65W5 application, or TK35A65W5 equivalent, key selection criteria include its fast reverse recovery time (130 ns typ.), avalanche ruggedness (614 mJ), gate threshold voltage range (3–4.5 V), TO-220SIS package thermal performance (R_th(ch-c) = 2.5 °C/W), and integrated body diode characteristics.

Technical Context

This device implements Toshiba's DTMOS™ IV process with optimized charge balance in the super junction structure to reduce conduction and switching losses simultaneously. Its enhancement-mode gate enables direct drive from standard PWM controllers without level-shifting, and the low Q_gd/Q_g ratio (57/115 nC) supports high-frequency operation up to 100 kHz in hard-switched topologies.

The integrated body diode features controlled reverse recovery (t_rr = 130 ns typ., Q_rr = 0.78 µC) and dv/dt ruggedness ≥50 V/ns, making it suitable for discontinuous conduction mode (DCM) flyback and resonant LLC converters where diode commutation stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports universal-input (85–265 V_AC) offline converters with sufficient margin against line transients.
R_DS(ON)	0.08 Ω (typ.) at V_GS = 10 V - Enables <1.4 W conduction loss at 35 A DC, reducing heatsink requirements.
I_D (DC)	35 A - Rated for continuous operation at T_c = 25 °C; derates to ~19 A at T_c = 100 °C per SOA curve.
t_rr	130 ns (typ.) - Minimizes switching loss and EMI during diode turn-off in flyback snubberless designs.
E_AS	614 mJ - Withstands single-pulse avalanche energy up to 8.8 A, supporting robust overvoltage protection without external clamping.
Q_g	115 nC - Determines gate driver power requirement; compatible with common 1–2 A peak-output drivers (e.g., UCC2732x).
R_th(ch-c)	2.5 °C/W - Enables 20 W dissipation with ≤50 °C case-to-channel rise, supporting compact thermal design in TO-220SIS.

Pinout & Package

TK35A65W5 is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package - a surface-mount-compatible variant of TO-220 with isolated tab, rated for 2000 V_RMS isolation and 0.6 N·m mounting torque. The package weighs 1.7 g and provides low thermal resistance for high-power density layouts.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives PWM signal; threshold voltage 3–4.5 V enables compatibility with 3.3 V/5 V logic-level drivers.
2: Drain	High-side power terminal	Connected to primary winding/high-voltage rail; electrically isolated from tab for safe heatsinking.
3: Source	Power return and reference	Serves as local ground reference for gate drive; ties to source of synchronous rectifier or controller ground plane.

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Reduces R_DS(ON) × area product by >40% vs. planar MOSFETs, enabling smaller die size and lower cost at 650 V rating.
Fast Body Diode Recovery	t_rr = 130 ns (typ.) and Q_rr = 0.78 µC minimize switching loss and voltage overshoot during ZVS transitions.
Avalanche-Rated Operation	Guaranteed E_AS = 614 mJ allows reliable operation under inductive switching stress without external snubbers.
Enhancement-Mode Gate	V_th = 3–4.5 V ensures turn-on only with active gate drive, eliminating risk of unintended conduction during startup or fault conditions.
Isolated Tab Construction	TO-220SIS package provides 2000 V_RMS isolation between drain and heatsink, simplifying safety-compliant mechanical layout.

Applications

AC-DC Adapters	Server SMPS
Use Scenario: 65–120 W universal-input offline flyback converter for laptop chargers and industrial auxiliary supplies. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; operates in DCM with self-driven synchronous rectification. Use Value: Low R_DS(ON) and fast t_rr reduce total power loss by ~1.2 W vs. legacy 650 V MOSFETs, improving efficiency from 87% to 89.5% at full load.	Use Scenario: 500–800 W half-bridge or LLC resonant converter in 1U server power supplies. IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge topology; handles 400 V bus with ZVS-assisted turn-on. Use Value: Low Q_gd/Q_g ratio and dv/dt ruggedness ≥50 V/ns ensure stable commutation under high dV/dt noise, reducing gate oscillation risk.
Industrial Motor Drives	PV Microinverters
Use Scenario: 1–3 kW three-phase inverter stage for HVAC compressors and pump drives. IC Role / Device Role / Timing Role: Phase-leg upper switch in IGBT replacement configuration; driven by isolated gate driver with 15 V supply. Use Value: Avalanche capability eliminates need for external clamps during motor short-circuit events, lowering BOM count and board space.	Use Scenario: 250–350 W single-phase microinverter converting PV panel DC to grid-synchronized AC. IC Role / Device Role / Timing Role: DC-link switch in H-bridge output stage; switches at 20–50 kHz with unipolar PWM modulation. Use Value: Isolated TO-220SIS tab enables direct mounting to aluminum heatsink without insulating pads, cutting thermal resistance by 1.1 °C/W and easing UL62368-1 creepage compliance.

AC-DC Adapters

Server SMPS

Use Scenario: 65–120 W universal-input offline flyback converter for laptop chargers and industrial auxiliary supplies.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; operates in DCM with self-driven synchronous rectification.

Use Value: Low R_DS(ON) and fast t_rr reduce total power loss by ~1.2 W vs. legacy 650 V MOSFETs, improving efficiency from 87% to 89.5% at full load.

Use Scenario: 500–800 W half-bridge or LLC resonant converter in 1U server power supplies.

IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge topology; handles 400 V bus with ZVS-assisted turn-on.

Use Value: Low Q_gd/Q_g ratio and dv/dt ruggedness ≥50 V/ns ensure stable commutation under high dV/dt noise, reducing gate oscillation risk.

Industrial Motor Drives

PV Microinverters

Use Scenario: 1–3 kW three-phase inverter stage for HVAC compressors and pump drives.

IC Role / Device Role / Timing Role: Phase-leg upper switch in IGBT replacement configuration; driven by isolated gate driver with 15 V supply.

Use Value: Avalanche capability eliminates need for external clamps during motor short-circuit events, lowering BOM count and board space.

Use Scenario: 250–350 W single-phase microinverter converting PV panel DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: DC-link switch in H-bridge output stage; switches at 20–50 kHz with unipolar PWM modulation.

Use Value: Isolated TO-220SIS tab enables direct mounting to aluminum heatsink without insulating pads, cutting thermal resistance by 1.1 °C/W and easing UL62368-1 creepage compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35N65M2	R_DS(ON) = 0.085 Ω (typ.), t_rr = 160 ns, no guaranteed E_AS spec	Lacks specified avalanche energy rating; requires external clamping in inductive loads	Preferred where cost sensitivity outweighs avalanche robustness needs
IPP65R099C7	R_DS(ON) = 0.099 Ω, Q_g = 92 nC, TO-220FP package (non-isolated tab)	Non-isolated tab mandates insulating pad; higher R_DS(ON) increases conduction loss by ~0.25 W at 35 A	Selected when footprint compatibility with Infineon's CoolMOS™ C7 family is required

Compared with STP35N65M2 and IPP65R099C7, TK35A65W5 offers superior avalanche ruggedness and isolated packaging-critical for unclamped inductive switching and safety-certified layouts-while maintaining competitive R_DS(ON) and gate charge for high-efficiency 650 V designs.

Availability

TK35A65W5 is available at Aetrix Electronics and suitable for AC-DC adapters, server SMPS, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK35A65W5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with core expertise in silicon power MOSFETs and IGBTs.

The TK35A65W5 belongs to Toshiba's DTMOS™ IV super junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer, industrial, and computing applications.

FAQ

What is the maximum continuous drain current rating for TK35A65W5?

The TK35A65W5 has a maximum continuous drain current (I_D) of 35 A at case temperature T_c = 25 °C. This rating decreases with rising case temperature due to thermal limitations - at T_c = 100 °C, the usable I_D drops to approximately 19 A per the Safe Operating Area curve. Derating must follow the R_th(ch-c) = 2.5 °C/W specification and maximum channel temperature limit of 150 °C.

Does TK35A65W5 have an isolated package, and what is its isolation voltage rating?

Yes, TK35A65W5 uses the TO-220SIS package with electrically isolated drain tab, certified for 2000 V_RMS isolation per JEDEC standards. This eliminates the need for insulating pads when mounting directly to grounded heatsinks, simplifying thermal design and improving safety compliance in Class II AC-DC systems.

What is the typical reverse recovery time (t_rr) of TK35A65W5's body diode?

The TK35A65W5 body diode has a typical reverse recovery time (t_rr) of 130 ns under test conditions of I_DR = 17.5 A, V_GS = 0 V, and -dI_DR/dt = 100 A/µs. This fast recovery reduces switching loss and voltage spikes in flyback and LLC converters, especially in snubberless or quasi-resonant topologies.

Can TK35A65W5 be driven directly by a 3.3 V microcontroller GPIO?

No - TK35A65W5 has a gate threshold voltage (V_th) range of 3–4.5 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(ON) = 0.08 Ω. A 3.3 V GPIO cannot fully turn on the device, resulting in excessive conduction loss and thermal runaway. A dedicated gate driver (e.g., TC4420) or level-shifter is required for reliable operation of TK35A65W5.

What is the guaranteed single-pulse avalanche energy rating for TK35A65W5?

The TK35A65W5 is rated for a guaranteed single-pulse avalanche energy (E_AS) of 614 mJ under test conditions of V_DD = 90 V, T_ch = 25 °C (initial), L = 14 mH, R_G = 25 Ω, and I_AR = 8.8 A. This specification confirms robustness against transient overvoltage events in inductive switching applications without external protection.

TK35A65W5,S5X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.1mA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK35A65W5,S5X FAQ

1.How can I place an order for TK35A65W5,S5X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK35A65W5,S5X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK35A65W5,S5X reliable?

The price and inventory of TK35A65W5,S5X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK35A65W5,S5X is usually 5 days.

3.What payment methods are accepted for TK35A65W5,S5X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK35A65W5,S5X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK35A65W5,S5X?

TK35A65W5,S5X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK35A65W5,S5X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK35A65W5,S5X?

For technical support, including TK35A65W5,S5X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK35A65W5,S5X requirements.

6.How does Aetrix verify that TK35A65W5,S5X is sourced from the original manufacturer or authorized distributors?

All TK35A65W5,S5X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK35A65W5,S5X meets industry standards.

7.What is the process for return or replacement of TK35A65W5,S5X?

All TK35A65W5,S5X units undergo pre-shipment inspection (PSI). If there is an issue with TK35A65W5,S5X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK35A65W5,S5X part is unused and in its original packaging.

Return procedure for TK35A65W5,S5X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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