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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQFH39N04NM6ATMA1

Name: IQFH39N04NM6ATMA1
Brand: Infineon Technologies
SKU: IQFH39N04NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQFH39N04NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 12-PowerTDFN

Datasheet:: IQFH39N04NM6ATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQFH39N04NM6ATMA1 from Infineon Technologies is a 40 V, 600 A N-channel OptiMOSTM6 power MOSFET in PG-TSON-12 package, featuring 0.39 mΩ max R_DS(on) at V_GS = 10 V, 100% avalanche tested, and rated for 175 °C operation. It is optimized for synchronous rectification and battery-powered DC-DC converters requiring ultra-low conduction loss and high pulse current capability.

For engineers reviewing the IQFH39N04NM6ATMA1 datasheet, IQFH39N04NM6ATMA1 pinout, IQFH39N04NM6ATMA1 application, or IQFH39N04NM6ATMA1 equivalent, key selection criteria include its 0.39 mΩ on-resistance, 199 nC Q_OSS, 182 nC total gate charge, thermal resistance of 0.55 °C/W (junction-to-case, bottom), and PG-TSON-12 drain-source layout for high-current PCB routing.

Technical Context

This device employs an advanced trench-gate silicon process with optimized cell pitch and deep-trench source contact to achieve sub-0.4 mΩ R_DS(on) while maintaining robust avalanche ruggedness (1260 mJ E_AS). Its low Q_G/Q_GD ratio supports fast switching with reduced Miller-induced turn-on risk in high-frequency synchronous buck stages.

The PG-TSON-12 package integrates a thermally enhanced bottom-side copper drain pad (Pins 7–12) and isolated top-side gate terminal (Pin 6), enabling dual-sided cooling and minimizing parasitic inductance in high-di/dt applications such as server VRMs and onboard chargers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V bus systems with margin against transients
R_DS(on), max	0.39 mΩ @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 600 A continuous drain current
I_D	600 A @ T_C = 25 °C - Supports high-current single-phase power stages without paralleling
Q_OSS	199 nC - Directly impacts hard-switching energy loss and resonant transition timing in ZVS designs
Q_G	182 nC @ 0–10 V - Determines gate driver peak current requirement (≥10 A for <20 ns rise time)
R_thJC (bottom)	0.55 °C/W - Enables >270 W power dissipation with 150 °C case temperature rise
E_AS	1260 mJ - Guarantees single-pulse avalanche survivability under inductive load interruption

Pinout & Package

PG-TSON-12 is a 3.3 mm × 3.3 mm, 1.0 mm height surface-mount package with exposed drain paddle on bottom side and integrated gate/source terminals on top. Thermal path is optimized via soldered drain pad to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–5	Source	Low-inductance parallel source connection for return path integrity in high-frequency switching
Pin 6	Gate	Single-point gate input; requires Kelvin-connected driver to minimize common-source inductance
Pins 7–12	Drain	Multi-pin drain termination with 95% copper fill for 600 A DC current and <0.3 nH loop inductance

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_G/Q_GD ratio (4.8) and 0.78 V typ. body diode V_SD reduce reverse recovery loss and improve light-load efficiency
100% avalanche tested	Each unit validated to 1260 mJ single-pulse energy, eliminating need for external snubbers in inductive switching
175 °C rated junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating below 600 A
Superior thermal resistance	0.55 °C/W R_thJC (bottom) allows direct heatsink mounting via thermal vias under drain pad
Pb-free and halogen-free	Complies with RoHS and IEC61249-2-21, supporting automotive and industrial end-equipment compliance requirements

Applications

Server Voltage Regulator Modules

Onboard EV Chargers

Use Scenario: High-density 48 V–12 V step-down conversion delivering up to 600 A per phase in AI accelerator racks.

IC Role / Device Role / Timing Role: Primary high-side synchronous FET in multiphase buck converter, switching at 500 kHz–1 MHz.

Use Value: 0.39 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 0.6 mΩ devices, enabling >95% full-load efficiency at 600 A.

Use Scenario: Bidirectional DC-DC stage in 11 kW OBC converting between 400 V battery and 48 V auxiliary system.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in CLLC resonant converter operating in ZVS mode.

Use Value: 199 nC Q_OSS enables reliable zero-voltage switching across 200–400 V DC link range, minimizing turn-on loss.

Industrial Motor Drives

Telecom Rectifiers

Use Scenario: Inverter leg in 10 kW servo drive powering PMSM motors with field-oriented control.

IC Role / Device Role / Timing Role: Phase-leg high-side switch handling 600 A peak motor current with 10 µs dead-time constraints.

Use Value: 2400 A pulsed drain rating and 1260 mJ E_AS ensure robustness during short-circuit fault events without desaturation protection.

Use Scenario: Primary-side switch in 3 kW telecom rectifier converting -48 V DC to 380 V DC bus for PoE++ infrastructure.

IC Role / Device Role / Timing Role: High-efficiency switching element in active clamp forward topology.

Use Value: 0.55 °C/W R_thJC allows direct thermal coupling to cold plate, sustaining 273 W dissipation at 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB110N04S4-02	Higher R_DS(on) (0.95 mΩ), TO-263-7 package, 120 A I_D	Limited to lower-current single-phase designs; lacks PG-TSON-12 thermal performance	Select when board space permits larger package and cost sensitivity outweighs efficiency gain
IRFH7185TRPBF	Similar R_DS(on) (0.42 mΩ), same PG-TSON-12, but only 175 °C rated and no 100% avalanche test	Suitable for non-safety-critical consumer power supplies; not qualified for industrial JEDEC Class 2	Select for cost-sensitive consumer applications where full avalanche ruggedness is not required

Compared with IPB110N04S4-02 and IRFH7185TRPBF, IQFH39N04NM6ATMA1 delivers 59% lower conduction loss at 600 A and JEDEC-qualified reliability for industrial ambient temperatures up to 105 °C, making it the sole option for high-current, high-reliability synchronous rectification.

Availability

IQFH39N04NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, onboard EV chargers, industrial motor drives, and telecom rectifiers requiring stable component supply and long-term production continuity.

Supply support for IQFH39N04NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification standards aligned to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM6 family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, EV, and industrial power systems where ultra-low R_DS(on) and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQFH39N04NM6ATMA1 supports 422 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This value reflects thermal de-rating due to reduced heat transfer at elevated case temperatures and must be verified against actual PCB layout thermal resistance.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a normal-level gate threshold (V_GS(th) = 1.8–2.8 V) and is designed for 0 V to 10 V gate drive. A negative gate voltage is not required; however, a gate driver capable of sinking ≥10 A peak current is recommended to achieve fast fall time (14 ns typical) and suppress Miller-induced false turn-on.

Can IQFH39N04NM6ATMA1 be used in parallel configurations?

Yes, but only with careful attention to gate loop inductance matching and source inductance balancing. The device's positive R_DS(on) temperature coefficient (see Diagram 9) enables inherent current sharing, yet mismatched PCB trace lengths or gate resistor values can cause >20% current imbalance at 600 A total.

Is the PG-TSON-12 package compatible with standard reflow profiles?

Yes. The package is qualified for lead-free reflow per J-STD-020D, with peak temperature up to 260 °C for 30 seconds. Critical process parameters include controlled ramp rates (<3 °C/s pre-peak) and avoidance of thermal shock during cooling to prevent solder joint voiding in the large drain paddle.

IQFH39N04NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 12-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Ta), 600A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 0.39mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 1.05mA

Gate Charge (Qg) (Max) @ Vgs:: 273 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 16400 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 273W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-12-1

IQFH39N04NM6ATMA1 FAQ

1.How can I place an order for IQFH39N04NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQFH39N04NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQFH39N04NM6ATMA1 reliable?

The price and inventory of IQFH39N04NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQFH39N04NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IQFH39N04NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQFH39N04NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQFH39N04NM6ATMA1?

IQFH39N04NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQFH39N04NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQFH39N04NM6ATMA1?

For technical support, including IQFH39N04NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQFH39N04NM6ATMA1 requirements.

6.How does Aetrix verify that IQFH39N04NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQFH39N04NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQFH39N04NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IQFH39N04NM6ATMA1?

All IQFH39N04NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQFH39N04NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQFH39N04NM6ATMA1 part is unused and in its original packaging.

Return procedure for IQFH39N04NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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