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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG65R040M2HXTMA1

Name: IMBG65R040M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R040M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R040M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R040M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMBG65R040M2HXTMA1 from Infineon is a 650 V, 40 mΩ silicon carbide (SiC) trench MOSFET in PG-TO263-7 package with integrated body diode, designed for high-frequency hard-switching power stages in industrial and EV infrastructure. It delivers 143 A pulsed drain current, 28 nC total gate charge, and 7.2 µJ output switching energy at 400 V - enabling >99% efficiency in 3-phase PFC and DC-DC converters for solar inverters and fast EV chargers.

For engineers reviewing the IMBG65R040M2HXTMA1 datasheet, IMBG65R040M2HXTMA1 pinout, IMBG65R040M2HXTMA1 application, or IMBG65R040M2HXTMA1 equivalent, key selection criteria include its 4.5 V gate threshold voltage, robust 200 V/ns dv/dt ruggedness, low 0.76 °C/W junction-to-case thermal resistance, and validated operation up to 175 °C junction temperature in continuous industrial environments.

Technical Context

This CoolSiC™ G2 MOSFET uses Infineon's second-generation SiC trench process to achieve ultra-low R_DS(on) of 40 mΩ at 18 V_GS and 25 °C, with stable 49 mΩ max at 175 °C. Its 5.8 pF reverse transfer capacitance (Crss) and 997 pF input capacitance (Ciss) enable fast, low-loss switching at 100+ kHz with minimal Miller-induced oscillation risk.

The device integrates a robust unipolar body diode rated for hard commutation, with 56–82 nC forward recovery charge (Q_fr) and <12.2 ns recovery time at 1000 A/µs di/dt. Gate drive compatibility spans 0 V turn-off and ±25 V transient voltage tolerance, supporting both unipolar and bipolar schemes without external clamping.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V DC bus designs with 1.6× safety margin against transients in solar PV and EV charging systems.
R_DS(on), typ	40 mΩ @ 18 V_GS, 25 °C - enables <1.2 W conduction loss at 22.9 A, reducing heatsink size in compact 10–20 kW converters.
Q_G, typ	28 nC - allows efficient gate driving with standard 2 A peak drivers at 100 kHz, minimizing driver power consumption.
E_oss @ 400 V	7.2 µJ - reduces turn-on loss in hard-switched topologies, critical for maintaining efficiency above 98% in 3-level NPC inverters.
R_th(j-c)	0.76 °C/W - enables direct mounting to cold plates for high-power density designs without thermal interface material degradation.
V_GS(th)	4.5 V (typ) - provides noise-immune turn-on margin over 3.3 V logic, eliminating false triggering in noisy motor drive environments.
dv/dt ruggedness	200 V/ns - ensures reliable operation during fast voltage transitions in SiC-based totem-pole PFC without snubbers.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount, with exposed drain tab for low-inductance, high-current PCB routing and enhanced thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Exposed copper pad - must be soldered to large copper pour for thermal and current path integrity; not electrically isolated.
Pin 1	Power Source (Source)	Primary source terminal - connects to low-side return path; internal connection to source metallization.
Pins 3–7	Driver Source	Dedicated Kelvin source pins - provide separate gate drive return path to eliminate source inductance impact on switching speed and stability.
Pin 2	Gate	Control input - requires low-impedance gate driver connection; internal gate resistance is 3.4 Ω.

Key Features

Feature	Design Value
Ultra-low switching losses	E_on + E_off = 46 µJ @ 400 V - cuts switching loss by >50% vs. comparable Si MOSFETs, enabling higher frequency operation without efficiency penalty.
Robust body diode under hard commutation	Q_fr = 56–82 nC, t_fr ≤ 12.2 ns - eliminates need for external anti-parallel SiC Schottky diodes in bidirectional converters and active rectifiers.
.XT interconnection technology	0.76 °C/W R_th(j-c) - achieves best-in-class thermal performance for TO263-7, allowing 197 W power dissipation at T_C = 25 °C.
Benchmark V_GS(th) = 4.5 V	3.5–5.6 V range - ensures consistent turn-on behavior across temperature and process variation, simplifying gate drive design and fault detection.
Flexible gate drive voltage	0 V turn-off and 18 V recommended turn-on - supports simple unipolar drivers and eliminates need for negative bias in most industrial applications.

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-level NPC or T-type inverter stage converting 1000 V DC input to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 10–25 kW power modules, operating at 50–100 kHz with zero-voltage switching assist.

Use Value: 40 mΩ R_DS(on) and 7.2 µJ E_oss reduce conduction and switching losses simultaneously, enabling >98.5% peak efficiency while maintaining thermal margin at 65 °C ambient.

Use Scenario: Isolated DC-DC stage in 150–350 kW liquid-cooled EV chargers, stepping down 1000 V battery voltage to 400–800 V output.

IC Role / Device Role / Timing Role: Primary-side SiC MOSFET in phase-shifted full-bridge topology, switching at 120–200 kHz with synchronous rectification.

Use Value: 200 V/ns dv/dt ruggedness and 143 A pulse rating support high-power density design with minimal snubber losses and reduced EMI filter size.

Industrial UPS Systems

Energy Storage Bidirectional Converters

Use Scenario: Double-conversion online UPS with 400 V DC link, delivering clean 230 V AC output during grid failure.

IC Role / Device Role / Timing Role: Output inverter switch handling 10–30 kVA loads, requiring high reliability and low THD under nonlinear load conditions.

Use Value: Robust body diode operation and 175 °C T_j rating ensure uninterrupted operation during extended backup runtime with minimal derating.

Use Scenario: Grid-tied battery energy storage system (BESS) using dual-active-bridge (DAB) or three-phase bidirectional DC-DC converter.

IC Role / Device Role / Timing Role: High-frequency isolation switch enabling 10–50 kHz soft-switched power transfer between 800 V battery and 1500 V DC grid interface.

Use Value: Low Q_GD (5.3 nC) and Crss (5.8 pF) minimize timing uncertainty in ZVS control, improving efficiency and reducing dead-time sensitivity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040065K	R_DS(on) = 40 mΩ, but Q_G = 34 nC and R_th(j-c) = 0.95 °C/W - higher gate drive loss and thermal resistance.	Limited to lower-power (<15 kW) or forced-air cooled designs due to thermal constraint.	Select when legacy Wolfspeed ecosystem integration is required; verify gate driver peak current capability for 34 nC charge.
ROHM SCT3040KL	R_DS(on) = 42 mΩ, V_GS(th) = 5.5 V (min), no Kelvin source pins - higher turn-on threshold and no dedicated driver source path.	Requires stronger gate drive and careful layout to suppress parasitic turn-on; less suitable for high-di/dt motor drives.	Prefer for cost-sensitive, lower-frequency (<50 kHz) applications where gate drive simplicity outweighs switching loss optimization.

Compared with C3M0040065K and SCT3040KL, IMBG65R040M2HXTMA1 offers superior thermal performance (0.76 vs. ≥0.95 °C/W), lower Q_G, and integrated Kelvin source terminals - making it optimal for high-power-density, high-reliability 100+ kHz industrial converters where thermal management and switching fidelity are critical.

Availability

IMBG65R040M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging stations, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IMBG65R040M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's CoolSiC™ G2 product line - engineered specifically for high-efficiency, high-reliability power conversion in 650 V–1700 V applications, with emphasis on industrial-grade ruggedness and simplified system integration.

FAQ

What is the maximum continuous drain current rating for IMBG65R040M2HXTMA1 at 100 °C case temperature?

The maximum continuous DC drain current is 34 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating is thermally limited by the 175 °C maximum junction temperature and 0.76 °C/W junction-to-case thermal resistance. Operation above this current requires active cooling or derating based on actual thermal interface conditions.

Can the Driver Source (Pins 3–7) and Power Source (Pin 1) be interchanged in PCB layout?

No - the source terminals are not interchangeable. Pin 1 is the main power source connection, while Pins 3–7 form the dedicated Kelvin driver source path. Swapping them introduces gate loop inductance that degrades switching speed, increases overshoot, and risks parasitic turn-on. The datasheet explicitly warns against this configuration.

Does IMBG65R040M2HXTMA1 support linear-mode (ohmic) operation?

No - linear-mode operation is not recommended per Section 5, Note 1 of the datasheet. The device is optimized for switching applications only. Sustained operation in the ohmic region causes localized heating and potential thermal runaway; Infineon advises contacting their sales office for specific linear-mode assessment if absolutely required.

What is the avalanche energy rating for single-pulse conditions?

The single-pulse avalanche energy (E_AS) is 132 mJ, tested at I_D = 4.9 A and V_DD = 50 V (Table 2). This rating applies only to short-duration, non-repetitive events and does not imply suitability for repetitive avalanche operation. System design must avoid repeated avalanche stress to ensure long-term reliability.

IMBG65R040M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 49mOhm @ 22.9A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 4.6mA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 997 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 197W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R040M2HXTMA1 FAQ

1.How can I place an order for IMBG65R040M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R040M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R040M2HXTMA1 reliable?

The price and inventory of IMBG65R040M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R040M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R040M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R040M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R040M2HXTMA1?

IMBG65R040M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R040M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R040M2HXTMA1?

For technical support, including IMBG65R040M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R040M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R040M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R040M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R040M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R040M2HXTMA1?

All IMBG65R040M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R040M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R040M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R040M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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