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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHB100N65E-GE3

Name: SIHB100N65E-GE3
Brand: Vishay Siliconix
SKU: SIHB100N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHB100N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SIHB100N65E-GE3.pdf

Description:: E SERIES POWER MOSFET 650 V (D-

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Product details

Overview

SIHB100N65E-GE3 from Vishay Siliconix is a 650 V, 30 A N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, featuring R_DS(on) = 0.087 Ω at V_GS = 10 V, Q_g = 41 nC (typ), and Kelvin-source connection for reduced gate noise-designed for high-efficiency, high-frequency switching in server power supplies and PFC stages.

For engineers reviewing the SIHB100N65E-GE3 datasheet, SIHB100N65E-GE3 pinout, SIHB100N65E-GE3 application, or SIHB100N65E-GE3 equivalent, key selection criteria include its 650 V blocking voltage, low 0.087 Ω on-resistance at 10 V drive, 127 mJ single-pulse avalanche energy rating, Kelvin-source layout for EMI-sensitive gate control, and D2PAK thermal performance with R_thJC = 0.6 °C/W.

Technical Context

This 4th-generation E-series MOSFET employs optimized trench-gate silicon technology to minimize conduction and switching losses simultaneously. Its low figure-of-merit (R_DS(on) × Q_g) of ~3.57 Ω·nC and Co(er) = 90 pF enable efficient operation in hard-switched 50–500 kHz topologies such as continuous-conduction-mode (CCM) PFC and LLC resonant converters.

The device integrates a robust body diode with t_rr = 362 ns (typ), Q_rr = 5.0 μC, and I_RRM = 22 A, supporting ZVS-assisted turn-on in bridge configurations. Kelvin-source terminals decouple high-di/dt source return from gate drive loop, reducing gate oscillation and improving noise immunity in high-density power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V AC input rectified systems with 20% margin for surge and ringing
R_DS(on) typ @ 10 V	0.087 Ω - enables ≤2.5 W conduction loss at 12 A DC, critical for thermally constrained PFC designs
Q_g typ	41 nC - reduces gate drive power and allows use of lower-power drivers in high-frequency SMPS
E_AS	127 mJ - withstands unclamped inductive switching events without failure in motor drive or welder H-bridges
R_thJC	0.6 °C/W - delivers 208 W power dissipation capability with minimal case-to-heatsink thermal resistance
Co(er)	90 pF - lowers output capacitance-related switching loss during hard-commutation transitions
dv/dt rating	100 V/ns - ensures reliable operation under fast transient voltage stress in high-speed inverters

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) plus Kelvin source terminal (S_K) electrically isolated from main source but bonded internally to source region.

Pin/Terminal	Circuit Role	Design Meaning
G	Main gate	Standard gate control input; requires 10 V drive for full enhancement and low R_DS(on)
D	Drain	High-voltage power node; connected to heatsink via exposed copper pad for thermal management
S	Main source	Power return path for load current; tied to PCB ground plane for low-inductance current return
S_K	Kelvin source	Reference point for gate drive loop; isolates gate return from high-di/dt source current, suppressing Miller-induced false turn-on

Key Features

Feature	Design Value
4th-generation E-series trench MOSFET	Optimized cell pitch and oxide thickness reduce R_DS(on) × Q_g trade-off for higher efficiency in 100–300 kHz PFC
Kelvin-source connection	Eliminates source inductance impact on gate control, enabling stable operation at >100 V/ns dv/dt
Avalanche-rated (UIS)	Guarantees ruggedness against inductive energy spikes without external snubbers in motor drives and welders
Low Co(er)	90 pF effective output capacitance minimizes turn-off loss in hard-switched topologies
Pb-free & halogen-free	Complies with RoHS 2011/65/EU and Vishay's Green Standard (Doc. #99912)

Applications

Server Power Supply	PFC Front-End
Use Scenario: Primary-side switching in 1–3 kW telecom/server PSUs operating at 100–200 kHz with CCM boost topology. IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter; handles 30 A peak inductor current with <1.5 V conduction drop. Use Value: Low R_DS(on) and Kelvin-source design reduce thermal stress and improve transient response during dynamic load steps.	Use Scenario: Active PFC stage in industrial LED drivers and PV inverters requiring >98% efficiency at full load. IC Role / Device Role / Timing Role: Fast-switching boost switch with 520 V V_DS stress and 14 A RMS current handling. Use Value: 41 nC Q_g and 90 pF Co(er) cut total switching loss by ~18% vs. prior-gen 650 V MOSFETs at 150 kHz.
Solar Inverter DC-Link	Induction Heating Half-Bridge
Use Scenario: DC-link switching in string inverters where bus voltage reaches 600 V under MPPT conditions. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg; subjected to repetitive 650 V blocking and 25 A peak current. Use Value: 127 mJ E_AS rating prevents failure during grid fault transients; R_thJC = 0.6 °C/W enables compact heatsink design.	Use Scenario: Resonant half-bridge in 10–30 kW induction furnaces operating at 20–100 kHz. IC Role / Device Role / Timing Role: High-frequency switching element with body diode conducting reverse recovery current during ZVS transitions. Use Value: 362 ns t_rr and 5.0 μC Q_rr minimize diode recovery loss and associated EMI in high-Q tank circuits.

Server Power Supply

PFC Front-End

Use Scenario: Primary-side switching in 1–3 kW telecom/server PSUs operating at 100–200 kHz with CCM boost topology.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter; handles 30 A peak inductor current with <1.5 V conduction drop.

Use Value: Low R_DS(on) and Kelvin-source design reduce thermal stress and improve transient response during dynamic load steps.

Use Scenario: Active PFC stage in industrial LED drivers and PV inverters requiring >98% efficiency at full load.

IC Role / Device Role / Timing Role: Fast-switching boost switch with 520 V V_DS stress and 14 A RMS current handling.

Use Value: 41 nC Q_g and 90 pF Co(er) cut total switching loss by ~18% vs. prior-gen 650 V MOSFETs at 150 kHz.

Solar Inverter DC-Link

Induction Heating Half-Bridge

Use Scenario: DC-link switching in string inverters where bus voltage reaches 600 V under MPPT conditions.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg; subjected to repetitive 650 V blocking and 25 A peak current.

Use Value: 127 mJ E_AS rating prevents failure during grid fault transients; R_thJC = 0.6 °C/W enables compact heatsink design.

Use Scenario: Resonant half-bridge in 10–30 kW induction furnaces operating at 20–100 kHz.

IC Role / Device Role / Timing Role: High-frequency switching element with body diode conducting reverse recovery current during ZVS transitions.

Use Value: 362 ns t_rr and 5.0 μC Q_rr minimize diode recovery loss and associated EMI in high-Q tank circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N65FD	650 V, 65 A, R_DS(on) = 0.065 Ω, Q_g = 95 nC, no Kelvin source	Higher current rating but larger gate charge increases driver loss; lacks Kelvin-source noise suppression	Preferred for higher-current, lower-frequency (<50 kHz) applications where gate noise is less critical
IXFH60N65X2	650 V, 60 A, R_DS(on) = 0.055 Ω, Q_g = 72 nC, standard 3-pin TO-247	Lower R_DS(on) but higher Q_g and no Kelvin source; TO-247 offers better thermal spread than D2PAK	Better for thermally demanding, lower-switching-frequency designs where board space permits TO-247 footprint

Compared with STW65N65FD and IXFH60N65X2, SIHB100N65E-GE3 delivers superior gate-noise immunity and lower switching loss per watt due to its Kelvin-source architecture and optimized 41 nC Q_g, making it ideal for compact, high-frequency PFC and server PSU designs where layout EMI control is critical.

Availability

SIHB100N65E-GE3 is available at Aetrix Electronics and suitable for server and telecom power supplies, power factor correction (PFC) circuits, and solar PV inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SIHB100N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The E Series Power MOSFET product line targets high-efficiency, high-frequency power conversion systems-including datacenter PSUs, industrial motor drives, and renewable energy inverters-where low R_DS(on) × Q_g, avalanche ruggedness, and layout-friendly packaging are essential.

FAQ

What is the maximum continuous drain current rating for SIHB100N65E-GE3 at 100 °C case temperature?

The SIHB100N65E-GE3 supports 19 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and internal silicon junction temperature constraints. At T_C = 25 °C, the rating rises to 30 A. Designers must verify actual case temperature under operating conditions using R_thJC = 0.6 °C/W and measured power dissipation to ensure safe operation of SIHB100N65E-GE3.

Does SIHB100N65E-GE3 include a Kelvin-source connection, and how is it implemented?

Yes, SIHB100N65E-GE3 features a dedicated Kelvin-source (S_K) terminal separate from the main source (S) pin. It is internally bonded to the source region but electrically isolated from the high-current source path, allowing gate drive return to be referenced directly to the MOSFET's intrinsic source potential. This eliminates voltage drop across source inductance during high-di/dt switching, preventing false turn-on-a critical advantage in high-frequency, high-power applications using SIHB100N65E-GE3.

What is the typical gate charge (Qg) value for SIHB100N65E-GE3, and how does it affect driver selection?

The typical total gate charge (Q_g) for SIHB100N65E-GE3 is 41 nC at V_GS = 10 V, with Q_gs = 16 nC and Q_gd = 15 nC. This relatively low Q_g enables efficient driving with medium-power gate drivers (e.g., 1–2 A peak), reducing driver IC cost and heat generation. When designing gate drive circuits for SIHB100N65E-GE3, designers should size R_g to achieve desired switching speed while maintaining EMI compliance-typical values range from 5 Ω to 15 Ω for 100–200 kHz operation.

Is SIHB100N65E-GE3 rated for avalanche energy, and what is its single-pulse value?

Yes, SIHB100N65E-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 127 mJ under test conditions of V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, and I_AS = 3.0 A. This ruggedness allows SIHB100N65E-GE3 to safely absorb inductive energy in motor drive, welding, and flyback converter applications without external snubbers-provided junction temperature remains within -55 °C to +150 °C limits during the event.

What package type does SIHB100N65E-GE3 use, and what are its thermal characteristics?

SIHB100N65E-GE3 uses the D2PAK (TO-263AB) surface-mount package with an exposed drain pad for direct thermal attachment to a heatsink or PCB copper area. Its maximum junction-to-case thermal resistance (R_thJC) is 0.6 °C/W, enabling up to 208 W power dissipation at T_C = 25 °C. The package is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's Green Standard (Document #99912). Proper solder paste volume and thermal pad layout are critical to achieving SIHB100N65E-GE3's rated thermal performance.

SIHB100N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2137 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SIHB100N65E-GE3 FAQ

1.How can I place an order for SIHB100N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHB100N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHB100N65E-GE3 reliable?

The price and inventory of SIHB100N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHB100N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHB100N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHB100N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHB100N65E-GE3?

SIHB100N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHB100N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHB100N65E-GE3?

For technical support, including SIHB100N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHB100N65E-GE3 requirements.

6.How does Aetrix verify that SIHB100N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHB100N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHB100N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHB100N65E-GE3?

All SIHB100N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHB100N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHB100N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHB100N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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