Toshiba Semiconductor and Storage TK31A60W,S4VX

Overview

TK31A60W,S4VX from Toshiba is a silicon N-channel super-junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V V_DSS, 30.8 A I_D (DC), R_DS(ON) = 0.073 Ω (typ.), and operates with V_th = 2.7–3.7 V - enabling efficient, gate-easy control in 65–100 kHz flyback and PFC stages.

For engineers reviewing the TK31A60W,S4VX datasheet, TK31A60W,S4VX pinout, TK31A60W,S4VX application, or TK31A60W,S4VX equivalent, key selection criteria include avalanche ruggedness (E_AS = 437 mJ), dV/dt immunity (≥50 V/ns), low C_iss (3000 pF), and TO-220SIS package thermal performance (R_th(ch-c) = 2.78 °C/W).

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low conduction loss without sacrificing switching speed. Its optimized charge profile (Q_g = 86 nC, Q_gd/Q_gs1 = 41/18 nC) supports ZVS-capable topologies while maintaining robust dv/dt immunity during hard-switching transitions.

The integrated body diode features t_rr = 410 ns and Q_rr = 3.5 µC at 15.4 A, enabling reliable operation in discontinuous conduction mode (DCM) PFC and synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

TK31A60W,S4VX is housed in a TO-220SIS (JEITA SC-67) package with internal source-isolation - enabling direct mounting to heatsink without insulating washer. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP33N60DM6 and IXTH30N60L2, TK31A60W,S4VX offers superior thermal resistance (2.78 °C/W vs ≥3.5 °C/W), source-isolation for simplified mechanical design, and tighter V_th tolerance - making it optimal for new designs prioritizing power density, thermal management, and layout simplicity in industrial and telecom power supplies.

Availability

TK31A60W,S4VX is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, telecom rectifiers, and EV auxiliary power supplies requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.

Supply support for TK31A60W,S4VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

TK31A60W,S4VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, telecom, and computing applications demanding 600 V breakdown and low gate charge.

FAQ

What is the maximum continuous drain current for TK31A60W,S4VX at 100°C case temperature?

The TK31A60W,S4VX specifies I_D = 30.8 A at T_c = 25°C. At T_c = 100°C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical maximum continuous drain current is approximately 18.5 A, based on linear derating from the 45 W P_D limit and R_th(ch-c) = 2.78 °C/W. Always verify thermal design using actual board layout and airflow in the final TK31A60W,S4VX implementation.

Does TK31A60W,S4VX have an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK31A60W,S4VX includes a monolithic body diode with t_rr = 410 ns and Q_rr = 3.5 µC (at I_DR = 15.4 A, dI_DR/dt = 50 A/µs). These values are measured under standardized conditions and enable predictable snubber design in flyback and PFC circuits. The diode's dv/dt ruggedness is rated ≥15 V/ns, supporting reliable operation in high-slew-rate environments typical of TK31A60W,S4VX-based power converters.

Can TK31A60W,S4VX be used in a high-side switching configuration without additional isolation components?

Yes - the TO-220SIS package provides electrical isolation between the source terminal and the metal drain-connected tab. This allows TK31A60W,S4VX to be directly mounted to a common heatsink while operating as a high-side switch, eliminating the need for gate-drive level shifters or isolated power supplies in many industrial and telecom applications where the source node floats relative to ground.

What is the gate threshold voltage range for TK31A60W,S4VX, and how does it affect drive circuit design?

The TK31A60W,S4VX has a guaranteed V_th range of 2.7–3.7 V (V_DS = 10 V, I_D = 1.5 mA). This enhancement-mode specification ensures full turn-on with standard 5 V or 10 V gate drivers and reliable turn-off at 0 V. Designers should use ≥10 V gate drive to achieve specified R_DS(ON) and avoid operation near the threshold region where gm is nonlinear and losses increase significantly in the TK31A60W,S4VX.

Is TK31A60W,S4VX RoHS compliant, and what marking indicates compliance?

Yes, TK31A60W,S4VX is RoHS compliant. Per Toshiba's marking convention (Section 7), a *underlined* Lot No. on the device surface indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]. Non-underlined markings denote lead-containing versions. Aetrix Electronics supplies only RoHS-compliant TK31A60W,S4VX units with verified underlined lot codes and full material declarations available upon request.