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Vishay Siliconix SIHG70N60EF-GE3
- Part No.:
- SIHG70N60EF-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
SIHG70N60EF-GE3.pdf
- Description:
- MOSFET N-CH 600V 70A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:7,948
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Product details
Overview
SIHG70N60EF-GE3 from Vishay Siliconix is a 600 V, 70 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring ultra-low gate charge (253 nC typ.), fast body diode (trr = 213 ns typ.), and low RDS(on) of 0.033 Ω at VGS = 10 V. It is engineered for high-efficiency, high-frequency switching in telecom and industrial SMPS topologies including LLC and phase-shifted bridge.
For engineers reviewing the SIHG70N60EF-GE3 datasheet, SIHG70N60EF-GE3 pinout, SIHG70N60EF-GE3 application, or SIHG70N60EF-GE3 equivalent, key selection criteria include its 1706 mJ UIS-rated avalanche energy, 70 V/ns dV/dt capability, and optimized FOM (RDS(on) × Qg = 8.36 Ω·nC), critical for ZVS operation and EMI reduction in high-density power converters.
Technical Context
This MOSFET employs Vishay's EF Series E-technology to achieve reduced reverse recovery charge (Qrr = 1.6 μC typ.) and peak reverse recovery current (IRRM = 16 A), enabling robust commutation in hard- and soft-switching circuits. Its low Ciss (7500 pF typ.) and Crss (5 pF typ.) support stable high-speed gate drive with minimal Miller effect.
The device integrates an avalanche-energy-rated body diode with VSD = 0.9 V typ. at IS = 35 A and TJ = 25 °C, and exhibits linear derating of 4.2 W/°C above TC = 25 °C. Thermal resistance RthJC is 0.24 °C/W, confirming efficient heat transfer to heatsinks in high-power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - Withstands DC bus voltages up to 480 V in 3-level inverters with margin |
| RDS(on) typ. | 0.033 Ω at VGS = 10 V, ID = 35 A - Enables <1.2 W conduction loss at 35 A |
| Qg typ. | 253 nC - Reduces gate driver power demand and switching transition time |
| trr typ. | 213 ns - Minimizes diode recovery losses and voltage overshoot during turn-on |
| EAS | 1706 mJ - Supports unclamped inductive switching without failure under transient stress |
| dV/dt rating | 70 V/ns - Ensures reliable operation in high dv/dt environments like ZVS resonant converters |
| RthJC | 0.24 °C/W - Allows >400 W continuous power dissipation with standard heatsink interface |
Pinout & Package
SIHG70N60EF-GE3 is housed in a TO-247AC package with isolated drain tab, optimized for high-voltage isolation and thermal performance. The case outline conforms to JEDEC TO-247 with facility-code-specific dimensional variants (versions 1–3), and features a thermally enhanced plastic body with optional thermal pad contour (D1/E1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V logic-level drive; low input capacitance (Ciss = 7500 pF) eases driver selection |
| 2 (Drain) | High-side power terminal | Connected to DC bus or transformer primary; electrically isolated tab enables direct heatsink mounting |
| 3 (Source) | Power return & reference node | Serves as local ground reference for gate drive; ties to source of synchronous rectifier or low-side switch |
| 4 (Drain) | Second drain connection | Parallel path for current sharing and reduced package inductance; improves current handling and thermal distribution |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode | trr = 213 ns typ., Qrr = 1.6 μC - Reduces switching losses and EMI in bridge-leg commutation |
| Low figure-of-merit | RDS(on) × Qg = 8.36 Ω·nC - Delivers superior efficiency vs. conventional 600 V MOSFETs in high-frequency SMPS |
| Avalanche energy rated | EAS = 1706 mJ - Eliminates need for external snubbers in inductive load switching |
| Ultra-low gate charge | Qg = 253 nC typ. - Enables use of cost-effective gate drivers and reduces driver power consumption |
| High dV/dt immunity | 70 V/ns - Prevents false turn-on in high-speed half-bridge configurations |
Applications
| Telecom Power Supply | Solar PV Inverter |
|---|---|
Use Scenario: High-efficiency 3 kW server PSU using phase-shifted full-bridge topology with ZVS. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 100–200 kHz with soft switching. Use Value: Low Qrr and fast trr minimize dead-time losses and improve light-load efficiency by >1.2%. | Use Scenario: 5 kW string inverter DC-AC stage employing 3-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg switching device handling 400–800 V DC link with bidirectional current flow. Use Value: 600 V rating and 1706 mJ EAS ensure reliability during grid fault transients and reactive power cycling. |
| LED Driver | Industrial Battery Charger |
Use Scenario: 1.2 kW constant-current LED driver for stadium lighting using LLC resonant converter. IC Role / Device Role / Timing Role: Main power switch synchronized to resonant tank frequency (~300 kHz). Use Value: Low Coss (378 pF) and Co(tr) = 926 pF enable precise zero-voltage switching across wide load range. | Use Scenario: 6 kW three-phase battery charger with active front-end and isolated DC-DC stage. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch in phase-shifted full-bridge DC-DC. Use Value: Fast body diode and low VSD (0.9 V) reduce conduction loss during freewheeling, improving thermal margin by 8 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW70N60DM6 | 600 V, 70 A, RDS(on) = 0.035 Ω, Qg = 220 nC, trr = 250 ns, TO-247 long leads | Higher Qrr (2.1 μC) and slower trr increase recovery loss in ZVS designs | Prefer SIHG70N60EF-GE3 where diode speed and EAS margin are critical |
| IXFH70N60X3 | 600 V, 70 A, RDS(on) = 0.032 Ω, Qg = 230 nC, trr = 200 ns, TO-247 non-isolated drain | No isolated drain tab; requires insulating washer for heatsink mounting | SIHG70N60EF-GE3 offers better thermal interface and higher dV/dt immunity (70 vs. 50 V/ns) |
Compared with STW70N60DM6 and IXFH70N60X3, SIHG70N60EF-GE3 delivers superior avalanche ruggedness (1706 mJ vs. 1200–1450 mJ), lower gate charge-to-RDS(on) ratio, and integrated isolated drain for simplified thermal design-making it optimal for mission-critical industrial and renewable energy systems.
Availability
SIHG70N60EF-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, solar PV inverters, and industrial battery chargers requiring stable component supply and long-term production continuity.
Supply support for SIHG70N60EF-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The EF Series power MOSFETs, including SIHG70N60EF-GE3, were designed specifically for high-frequency, high-efficiency switching in telecom, industrial, and renewable energy power conversion systems where fast body diode performance and avalanche ruggedness are essential.
FAQ
What is the maximum continuous drain current rating for SIHG70N60EF-GE3 at TC = 100 °C?
The maximum continuous drain current for SIHG70N60EF-GE3 is 45 A when case temperature (TC) is 100 °C, per the Absolute Maximum Ratings table. This rating assumes proper heatsinking and accounts for thermal derating beyond 25 °C at 4.2 W/°C. At TC = 25 °C, the rating increases to 70 A, and pulsed current capability reaches 229 A.
Does SIHG70N60EF-GE3 have a fully rated avalanche energy specification?
Yes, SIHG70N60EF-GE3 is fully rated for single-pulse unclamped inductive switching (UIS) with EAS = 1706 mJ at TJ = 25 °C, VDD = 50 V, L = 28.2 mH, Rg = 25 Ω, and IAS = 11 A. This value is measured and guaranteed per Vishay's test conditions and reflects the device's ability to absorb inductive energy without failure.
What is the typical reverse recovery time (trr) of the body diode in SIHG70N60EF-GE3?
The typical reverse recovery time (trr) of the integral body diode in SIHG70N60EF-GE3 is 213 ns, measured at TJ = 25 °C, IF = IS = 35 A, dI/dt = 100 A/μs, and VR = 400 V. This fast recovery characteristic directly supports reduced switching loss and improved efficiency in bridge-leg and resonant topologies.
Is SIHG70N60EF-GE3 lead (Pb)-free and halogen-free?
Yes, SIHG70N60EF-GE3 is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the datasheet. The "-GE3" suffix explicitly denotes compliance with RoHS Directive 2011/65/EU and Vishay's halogen-free policy per document 99912.
What is the gate-source threshold voltage range for SIHG70N60EF-GE3?
The gate-source threshold voltage (VGS(th)) for SIHG70N60EF-GE3 is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity against spurious gate excursions in high-noise power environments.
SIHG70N60EF-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 380 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7500 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 520W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
SIHG70N60EF-GE3 FAQ
1.How can I place an order for SIHG70N60EF-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHG70N60EF-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHG70N60EF-GE3 reliable?
The price and inventory of SIHG70N60EF-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG70N60EF-GE3 is usually 5 days.
3.What payment methods are accepted for SIHG70N60EF-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG70N60EF-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHG70N60EF-GE3?
SIHG70N60EF-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHG70N60EF-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHG70N60EF-GE3?
For technical support, including SIHG70N60EF-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG70N60EF-GE3 requirements.
6.How does Aetrix verify that SIHG70N60EF-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHG70N60EF-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG70N60EF-GE3 meets industry standards.
7.What is the process for return or replacement of SIHG70N60EF-GE3?
All SIHG70N60EF-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG70N60EF-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHG70N60EF-GE3 part is unused and in its original packaging.
Return procedure for SIHG70N60EF-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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