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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIHG125N65E-GE3

Name: SIHG125N65E-GE3
Brand: Vishay Siliconix
SKU: SIHG125N65E-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIHG125N65E-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SIHG125N65E-GE3.pdf

Description:: E SERIES POWER MOSFET 650 V (D-

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Product details

Overview

SIHG125N65E-GE3 from Vishay Siliconix is a 650 V, 27 A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) = 0.106 Ω at V_GS = 10 V, Q_g = 38 nC (typ), and Kelvin-source connection for reduced gate noise-designed for high-efficiency switch-mode power supplies, PFC stages, and solar inverters.

For engineers reviewing the SIHG125N65E-GE3 datasheet, SIHG125N65E-GE3 pinout, SIHG125N65E-GE3 application, or SIHG125N65E-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, gate charge behavior, avalanche ruggedness (E_AS = 81 mJ), and real-world use context for high-voltage, medium-power switching designs.

Technical Context

This E-series MOSFET employs 4th-generation silicon technology optimized for low figure-of-merit (R_DS(on) × Q_g = 4.0 nΩ·F) and reduced effective output capacitance (C_o(er) = 81 pF), enabling faster switching with lower losses in hard-switched topologies. Its Kelvin-source configuration isolates the power source terminal from the signal source, minimizing gate loop inductance and improving dv/dt immunity.

The device supports unclamped inductive switching (UIS) with rated single-pulse avalanche energy of 81 mJ and exhibits stable threshold voltage (V_GS(th) = 3.0–5.0 V) and low gate leakage (±100 nA at ±20 V), ensuring robust gate drive compatibility across industrial temperature range (−55 °C to +150 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V DC bus designs with 30 % margin for transient overvoltage in telecom and solar applications
R_DS(on) typ	0.106 Ω at V_GS = 10 V - enables <1.3 W conduction loss at 12 A, critical for thermally constrained PFC boost stages
Q_g max	57 nC - determines gate driver current requirement (~1.1 A peak for 50 ns turn-on with 9.1 Ω R_g)
E_AS	81 mJ - ensures reliable operation under inductive fault conditions without derating in welder or motor drive H-bridges
C_o(er)	81 pF - reduces stored energy loss during turn-off, directly lowering switching loss in 100 kHz+ SMPS
T_J max	+150 °C - allows full-rated current operation up to 100 °C case temperature with R_thJC = 0.6 °C/W
I_D cont	27 A at T_C = 25 °C - defines maximum continuous current capability with heatsink; derates linearly to 17 A at 100 °C

Pinout & Package

TO-247AC package with isolated drain tab, 3-pin configuration, and Kelvin-source layout: Drain (pins 2 & 4), Source (pin 3), Gate (pin 1). Thermal resistance junction-to-case is 0.6 °C/W; plastic body dimensions per JEDEC outline with optional thermal pad contour (D1/E1).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Low-impedance gate terminal; requires <1.6 Ω gate resistor for optimal dv/dt control and ringing suppression
2 & 4 (Drain)	High-side power path	Electrically common drain terminals; both pins connect to heatsink for thermal and electrical return path
3 (Source)	Kelvin sense / power return	Separate low-inductance source path for gate drive reference-reduces Miller-induced false turn-on during fast switching

Key Features

Feature	Design Value
4th-gen E-series silicon	Delivers 22 % lower R_DS(on) × Q_g vs. prior generation-directly improves efficiency in 65–100 kHz PFC converters
Kelvin-source connection	Eliminates source inductance from gate loop-enables stable 100 V/ns dv/dt operation without external gate clamping
Avalanche-rated (UIS)	Guarantees 81 mJ single-pulse energy handling-removes need for external snubbers in inductive load switching
Low C_o(er)	81 pF at 400 V-reduces turn-off loss by ~35 % compared to standard 650 V MOSFETs with similar R_DS(on)
Pb-free & halogen-free	Meets RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912)

Applications

Server Power Supply	Solar PV Inverter
Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with interleaved PFC and LLC resonant stage. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC boost converter operating at 65 kHz. Use Value: Low Q_g and Kelvin-source design reduce gate drive loss and prevent shoot-through during phase-shift transitions.	Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology. IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter bridge leg. Use Value: 650 V rating and 81 mJ UIS rating enable direct substitution without snubber redesign or layout change.
Industrial Motor Drive	Fluorescent Ballast
Use Scenario: Output stage in 7.5 kW HVAC variable-frequency drive with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, conducting bidirectional current via body diode during regeneration. Use Value: Low V_SD = 1.2 V and fast trr = 345 ns minimize conduction loss and reverse recovery stress during PWM commutation.	Use Scenario: Resonant half-bridge switch in electronic ballast for 400 W HID lamp ignition. IC Role / Device Role / Timing Role: Main switching element in 50–100 kHz series-resonant tank, subjected to high dv/dt during zero-voltage switching transitions. Use Value: 100 V/ns dv/dt rating and low Crss = 2 pF suppress false triggering and improve light-strike reliability.

Server Power Supply

Solar PV Inverter

Use Scenario: Primary-side switching in 3.3 kW telecom rectifier with interleaved PFC and LLC resonant stage.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) PFC boost converter operating at 65 kHz.

Use Value: Low Q_g and Kelvin-source design reduce gate drive loss and prevent shoot-through during phase-shift transitions.

Use Scenario: DC-link switching in string-level 5 kW photovoltaic inverter with two-level NPC topology.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 16 kHz hard-switched inverter bridge leg.

Use Value: 650 V rating and 81 mJ UIS rating enable direct substitution without snubber redesign or layout change.

Industrial Motor Drive

Fluorescent Ballast

Use Scenario: Output stage in 7.5 kW HVAC variable-frequency drive with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, conducting bidirectional current via body diode during regeneration.

Use Value: Low V_SD = 1.2 V and fast trr = 345 ns minimize conduction loss and reverse recovery stress during PWM commutation.

Use Scenario: Resonant half-bridge switch in electronic ballast for 400 W HID lamp ignition.

IC Role / Device Role / Timing Role: Main switching element in 50–100 kHz series-resonant tank, subjected to high dv/dt during zero-voltage switching transitions.

Use Value: 100 V/ns dv/dt rating and low Crss = 2 pF suppress false triggering and improve light-strike reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12NK60Z	600 V rating, higher R_DS(on) = 0.58 Ω, no Kelvin source, Zener-protected gate	Limited to ≤200 W applications; unsuitable for >400 V DC bus or high-frequency PFC	Select only for cost-sensitive, low-power, non-Kelvin-requiring designs where 600 V margin suffices
IXFH120N65X2	650 V, R_DS(on) = 0.095 Ω, Q_g = 52 nC, no Kelvin source, ultra-low Q_gd/Q_g ratio	Better high-frequency efficiency but lacks avalanche rating (no E_AS spec); requires external clamping in inductive loads	Prefer for >200 kHz resonant converters where avalanche ruggedness is secondary to switching speed

Compared with STW12NK60Z, SIHG125N65E-GE3 delivers 5.5× lower R_DS(on) and Kelvin-source noise immunity for high-power PFC; versus IXFH120N65X2, it trades 11 % lower Q_g for guaranteed 81 mJ avalanche capability-critical for industrial motor drives and welding equipment.

Availability

SIHG125N65E-GE3 is available at Aetrix Electronics and suitable for server power supplies, solar PV inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SIHG125N65E-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability testing.

The E Series Power MOSFET product line targets high-efficiency, high-voltage power conversion systems-including telecom rectifiers, solar inverters, and industrial motor controls-where low FOM and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for SIHG125N65E-GE3 at 100 °C case temperature?

The SIHG125N65E-GE3 supports 17 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits imposed by R_thJC = 0.6 °C/W and maximum junction temperature of +150 °C. At T_C = 25 °C, the rating rises to 27 A. Designers must verify heatsink performance to maintain safe junction temperatures under full-load conditions.

Does SIHG125N65E-GE3 have a Kelvin-source connection, and how does it affect gate drive design?

Yes, SIHG125N65E-GE3 features a dedicated Kelvin-source terminal (pin 3) separate from the power source path. This configuration removes source inductance from the gate loop, preventing Miller-induced false turn-on during high dv/dt switching. Gate drive circuits must connect the driver ground exclusively to pin 3-not to the drain-tab or PCB ground plane-to realize the full noise immunity benefit.

What is the typical total gate charge (Qg) of SIHG125N65E-GE3, and how does it impact driver selection?

The SIHG125N65E-GE3 has a typical total gate charge of 38 nC at V_GS = 10 V, with Q_gs = 15 nC and Q_gd = 14 nC. For a 50 ns target turn-on time with 9.1 Ω gate resistor, the required peak gate current is ~1.1 A. Drivers such as the UCC27531 or TC4420 are suitable, provided they deliver ≥1.5 A peak current and handle 30 V gate voltage swing.

Is SIHG125N65E-GE3 avalanche-rated, and what is its single-pulse energy limit?

Yes, SIHG125N65E-GE3 is fully rated for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy (E_AS) of 81 mJ under specified test conditions (V_DD = 140 V, L = 28.2 mH, R_g = 25 Ω, I_AS = 2.4 A). This rating enables robust operation in motor drive and welding applications without external snubbers, provided pulse width remains within junction temperature limits.

What package type does SIHG125N65E-GE3 use, and are thermal pad dimensions standardized?

SIHG125N65E-GE3 uses the TO-247AC package per JEDEC outline, with facility-code variants (9/Y/N) specifying minor dimensional tolerances. The thermal pad (D1/E1) is optional per package version; when present, D1 = 16.46–17.06 mm and E1 = 13.46–14.16 mm (Version 1). All versions share identical pin assignment (Gate=1, Drain=2&4, Source=3) and R_thJC = 0.6 °C/W.

SIHG125N65E-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: E

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1938 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

SIHG125N65E-GE3 FAQ

1.How can I place an order for SIHG125N65E-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIHG125N65E-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIHG125N65E-GE3 reliable?

The price and inventory of SIHG125N65E-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHG125N65E-GE3 is usually 5 days.

3.What payment methods are accepted for SIHG125N65E-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHG125N65E-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIHG125N65E-GE3?

SIHG125N65E-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIHG125N65E-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIHG125N65E-GE3?

For technical support, including SIHG125N65E-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHG125N65E-GE3 requirements.

6.How does Aetrix verify that SIHG125N65E-GE3 is sourced from the original manufacturer or authorized distributors?

All SIHG125N65E-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHG125N65E-GE3 meets industry standards.

7.What is the process for return or replacement of SIHG125N65E-GE3?

All SIHG125N65E-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHG125N65E-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIHG125N65E-GE3 part is unused and in its original packaging.

Return procedure for SIHG125N65E-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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