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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGLT65R110D2ATMA1

Name: IGLT65R110D2ATMA1
Brand: Infineon Technologies
SKU: IGLT65R110D2ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGLT65R110D2ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 16-PowerSOP Module

Datasheet:: IGLT65R110D2ATMA1.pdf

Description:: IGLT65R110D2ATMA1

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Product details

Overview

IGLT65R110D2ATMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-HDSOP-16 package, featuring 110 mΩ R_DS(on), 2.4 nC total gate charge, 18 nC output charge at 400 V, 30 A pulsed drain current, and Kelvin source configuration for high-frequency hard-switching topologies. It serves as a high-efficiency primary-side switch in totem-pole PFC and LLC resonant converters.

For engineers reviewing the IGLT65R110D2ATMA1 datasheet, IGLT65R110D2ATMA1 pinout, IGLT65R110D2ATMA1 application, or IGLT65R110D2ATMA1 equivalent, key selection criteria include its 2.3 °C/W junction-to-case thermal resistance, zero reverse recovery charge, ultra-low Q_oss (33 pF energy-related), normally-off safety, and validated JEDEC industrial qualification.

Technical Context

This CoolGaN™ G5 device uses lateral GaN-on-Si technology with integrated Kelvin source terminal to minimize gate loop inductance and suppress common-source inductance effects during fast switching. Its 900 V transient voltage rating enables robust operation under 700 V DC bus surges in high-frequency SMPS.

The transistor exhibits no body diode reverse recovery (Q_rr = 0 nC), enabling true zero-voltage switching (ZVS) in soft-switched topologies and eliminating commutation losses. Gate threshold voltage (0.9–1.6 V) and low input capacitance (170 pF) support precise timing control with standard 12 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - Rated for continuous operation in 400–600 V DC bus applications like server PSUs and telecom rectifiers
R_DS(on),max	140 mΩ - Confirmed max on-resistance at T_j = 150°C ensures thermal margin in high-power density designs
Q_G	2.4 nC - Low gate charge enables <10 ns turn-on delay with 10 Ω gate resistor, reducing driver loss
Q_oss (energy)	33 pF - Fixed effective output capacitance yielding 2.6 μJ stored energy at 400 V, critical for ZVS design
I_D,pulse	30 A - Peak pulsed current capability supports 1.5× continuous current handling in burst-mode operation
R_thJC	2.3 °C/W - Verified junction-to-case thermal resistance allows direct heatsink mounting for >50 W conduction
dv/dt rating	200 V/ns - High slew-rate immunity prevents false turn-on in high-di/dt half-bridge layouts

Pinout & Package

PG-HDSOP-16 package with exposed thermal pad (heatslug) and integrated Kelvin source terminal for accurate gate drive referencing. Pin 1–8: Drain (common); Pin 9: Gate; Pin 10: Kelvin Source; Pin 11–16: Power Source.

Pin/Terminal	Circuit Role	Design Meaning
1–8	Drain	High-side power node connection; paralleled pins reduce current density and inductance
9	Gate	Main gate drive input; requires low-inductance routing to minimize ringing during 200 V/ns transitions
10	Kelvin Source	Reference return for gate driver IC; isolates gate loop from high di/dt source current path
11–16	Power Source	Main current return path; multiple pins lower resistance and improve thermal spreading to PCB copper
Heatslug	Thermal Pad	Electrically connected to source; must be soldered to large copper area for 2.3 °C/W R_thJC performance

Key Features

Feature	Design Value
No reverse recovery charge (Q_rr = 0 nC)	Enables lossless commutation in totem-pole PFC and eliminates snubber requirements in LLC
Ultra-low Q_oss (33 pF energy-related)	Reduces turn-off energy loss by >40% vs comparable Si MOSFETs at 400 V, extending ZVS range
Kelvin source configuration	Suppresses gate oscillation and improves switching consistency across temperature and load variations
JEDEC-qualified for industrial use	Validated for 150°C continuous operation and 2 kV HBM ESD, supporting 10+ year field reliability
Normally-off operation	Eliminates need for active gate bias circuits, simplifying driver design and improving system safety

Applications

Server PSU Half-Bridge LLC

Totem-Pole PFC

Use Scenario: Primary-side synchronous rectifier in 3–6 kW datacenter power supplies operating at 500–700 kHz.

IC Role / Device Role / Timing Role: High-side GaN switch in resonant LLC half-bridge, delivering precise zero-voltage switching timing via low Q_g and Q_oss.

Use Value: Enables >98% efficiency at full load by minimizing conduction and switching losses while maintaining stable 150°C junction temperature.

Use Scenario: Active switch in bidirectional totem-pole PFC stage for 80 PLUS Titanium AC-DC front-ends.

IC Role / Device Role / Timing Role: Fast-turning GaN transistor controlling high-frequency AC line current shaping with sub-10 ns edge control.

Use Value: Achieves THD <3% at 230 VAC/50 Hz and eliminates body diode conduction loss, reducing heatsink size by 35%.

Industrial Motor Drive Inverter

High-Density USB-C PD Charger

Use Scenario: 3-phase inverter stage in servo drives requiring 20 kHz PWM with minimal dead-time distortion.

IC Role / Device Role / Timing Role: Low-R_DS(on) GaN switch enabling tight PWM duty cycle control without shoot-through risk due to normally-off behavior.

Use Value: Supports 100% torque at stall with <1.2°C/W thermal rise per phase, enabling compact 50 mm × 50 mm inverter modules.

Use Scenario: Primary-side switch in 100–200 W GaN-based USB-C PD chargers targeting <15 mm profile.

IC Role / Device Role / Timing Role: 650 V GaN transistor operating in QR/CCM flyback or active-clamp forward topology at >250 kHz.

Use Value: Reduces transformer size by 40% and achieves >94% average efficiency across 5–20 V output range with no external snubber.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V SiC MOSFET; higher R_DS(on) (500 mΩ), 3× higher Q_oss, no Kelvin source	Requires larger gate driver, limited to ≤200 kHz due to slower switching; better for high-temp (>175°C) but lower efficiency	Select when extreme temperature tolerance outweighs efficiency and size targets
EPC2065	650 V GaN FET; 100 mΩ R_DS(on), no Kelvin source, 1.7 nC Q_G, LGA package only	LGA thermal interface limits power handling; unsuitable for >40 A peak currents or forced-air cooling	Select for space-constrained low-power adapters where Kelvin source is not required

Compared with TPH3205WS and EPC2065, IGLT65R110D2ATMA1 uniquely combines Kelvin source, 2.3 °C/W R_thJC, and JEDEC industrial qualification-making it optimal for thermally demanding, high-reliability 3–6 kW SMPS where layout-induced gate instability must be eliminated.

Availability

IGLT65R110D2ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable GaN sourcing.

Supply support for IGLT65R110D2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

This part belongs to the CoolGaN™ G5 product line, engineered specifically for high-frequency, high-efficiency 650 V power conversion in datacenter, industrial, and telecom SMPS-prioritizing ruggedness, thermal performance, and layout-friendly packaging.

FAQ

What gate driver voltage and configuration is recommended for IGLT65R110D2ATMA1?

Infineon specifies a 10 V gate drive with ±10 V absolute maximum ratings. A dedicated Kelvin source return path is mandatory-separate gate driver ground from power source ground, and route the Kelvin source trace directly to the driver's reference pin. Use 10 Ω gate resistor for optimal trade-off between switching speed and overshoot suppression.

Does IGLT65R110D2ATMA1 require a negative gate voltage for reliable turn-off?

No. As a normally-off enhancement-mode GaN transistor, it fully turns off at 0 V gate-source voltage. Applying negative voltage is unnecessary and risks exceeding the –8 V gate-source reverse clamping limit. Stable 0 V turn-off is confirmed across –55°C to 150°C junction temperatures per datasheet Table 4.

How is thermal performance affected if the heatslug is not soldered to PCB copper?

Without soldering the heatslug, junction-to-ambient thermal resistance degrades from 2.3 °C/W to ≥68 °C/W (per Table 3), causing >25× higher temperature rise at 15 A. This leads to immediate thermal shutdown or accelerated parametric drift. Infineon mandates full-solder coverage of the exposed thermal pad using ≥6 cm² of 70 μm copper on FR4.

Can IGLT65R110D2ATMA1 replace silicon MOSFETs in existing half-bridge designs without layout changes?

No. The Kelvin source pin (Pin 10) and dual-source pin configuration require dedicated PCB routing to isolate gate drive return from power return. Existing Si MOSFET layouts lack this separation, risking gate oscillation and false turn-on. A new layout with split ground planes and Kelvin trace is mandatory for reliable operation.

IGLT65R110D2ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 16-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs:: 2.4 nC @ 3 V

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 55W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-16-8

IGLT65R110D2ATMA1 FAQ

1.How can I place an order for IGLT65R110D2ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGLT65R110D2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGLT65R110D2ATMA1 reliable?

The price and inventory of IGLT65R110D2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLT65R110D2ATMA1 is usually 5 days.

3.What payment methods are accepted for IGLT65R110D2ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLT65R110D2ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGLT65R110D2ATMA1?

IGLT65R110D2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGLT65R110D2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGLT65R110D2ATMA1?

For technical support, including IGLT65R110D2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLT65R110D2ATMA1 requirements.

6.How does Aetrix verify that IGLT65R110D2ATMA1 is sourced from the original manufacturer or authorized distributors?

All IGLT65R110D2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLT65R110D2ATMA1 meets industry standards.

7.What is the process for return or replacement of IGLT65R110D2ATMA1?

All IGLT65R110D2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLT65R110D2ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGLT65R110D2ATMA1 part is unused and in its original packaging.

Return procedure for IGLT65R110D2ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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