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Infineon Technologies IGLT65R045D2ATMA1
- Part No.:
- IGLT65R045D2ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 16-PowerSOP Module
- Datasheet:
-
IGLT65R045D2ATMA1.pdf
- Description:
- IGLT65R045D2ATMA1
- Quantity:
- Payment:
- Shipping:
Inventory:3,613
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Product details
Overview
IGLT65R045D2ATMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-HDSOP-16 package, featuring 45 mΩ typical RDS(on), 6 nC gate charge, 76 A pulsed drain current, and Kelvin source configuration for precise gate control. It serves as a high-frequency switching device in hard- and soft-switching topologies including totem-pole PFC and LLC resonant converters.
For engineers reviewing the IGLT65R045D2ATMA1 datasheet, IGLT65R045D2ATMA1 pinout, IGLT65R045D2ATMA1 application, or IGLT65R045D2ATMA1 equivalent, key selection criteria include its 900 V transient voltage rating, ultra-low Qrr (0 nC), 200 V/ns dv/dt capability, Kelvin-source layout for gate loop inductance reduction, and JEDEC-qualified reliability for industrial SMPS designs.
Technical Context
This CoolGaN™ G5 transistor employs lateral GaN-on-silicon technology with integrated Kelvin source terminal (Pin 10) to decouple power and signal return paths-enabling stable gate drive under high di/dt conditions. Its zero reverse recovery charge and 45 nC output charge at 400 V support efficient operation in >1 MHz switching applications.
The device operates in enhancement mode with 1.2 V typical gate threshold and −8 V gate-source reverse clamping, ensuring robust gate protection. Thermal resistance of 1.0 °C/W (junction-to-case) and 68 °C/W (junction-to-ambient on 40 mm × 40 mm PCB) enables high-power-density thermal management in compact adapters and server PSUs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS,max | 650 V - rated blocking voltage for 650 V bus applications like telecom rectifiers and EV chargers |
| RDS(on),typ | 45 mΩ - conduction loss of ~0.45 W at 10 A DC, enabling high-efficiency 3–5 kW systems |
| QG | 6 nC - low gate charge reduces driver power and enables <10 ns switching transitions |
| Qoss@400 V | 45 nC - energy-related output capacitance determines turn-off loss in hard-switched topologies |
| ID,pulse | 76 A - peak current capability supports 3.3 kW LLC half-bridge operation at 100 kHz |
| Tj,max | 150 °C - maximum junction temperature allows sustained operation in sealed industrial enclosures |
| dv/dt rating | 200 V/ns - immunity to parasitic turn-on ensures reliable operation in high-di/dt totem-pole PFC stages |
Pinout & Package
Package: PG-HDSOP-16 - thermally enhanced surface-mount package with exposed heatslug (Pins 11–16) and integrated Kelvin source (Pin 10).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–8 | Drain | Main high-side power path; electrically tied to heatslug for low-inductance thermal and current return |
| 9 | Gate | Standard gate input; requires low-impedance driver due to 1.3 Ω internal gate resistance |
| 10 | Kelvin Source | Dedicated sense path for gate drive reference-eliminates source inductance impact on switching stability |
| 11–16 | Heatslug / Power Source | Primary current-carrying source terminal and thermal interface; soldered directly to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Enhancement-mode GaN structure | Normally OFF operation eliminates external bias circuitry and improves system safety during startup/fault |
| Kelvin source configuration | Separates gate-loop sensing from high-current source return-reducing overshoot and improving EMI performance |
| Zero reverse recovery charge (Qrr = 0 nC) | Enables bidirectional conduction without body diode losses-critical for ZVS/ZCS soft-switching efficiency |
| 2 kV HBM ESD rating | Robust handling during SMT assembly and field service without additional gate protection components |
| JEDEC-qualified reliability | Validated per JEP198 stress protocols for 10+ year lifetime in continuous industrial operation |
Applications
| Server PSU LLC Resonant Converter | Totem-Pole PFC Stage |
|---|---|
|
Use Scenario: High-efficiency 3.3 kW 48 V output server power supply operating at 700 kHz LLC frequency with synchronous rectification. IC Role / Device Role / Timing Role: Primary-side high-side GaN switch in asymmetric half-bridge LLC topology; handles 400 V DC bus and 30 A peak drain current. Use Value: 45 mΩ RDS(on) and 6 nC QG reduce conduction + switching losses by 32% vs. Si MOSFET equivalents, enabling >98% full-load efficiency. |
Use Scenario: Active front-end PFC in 2.5 kW telecom rectifier with bidirectional conduction requirement and >99% efficiency target. IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC; conducts forward and reverse current with zero Qrr. Use Value: Elimination of reverse recovery losses enables 2× higher switching frequency (150 kHz) and 40% smaller passive filter size versus silicon carbide alternatives. |
| EV Onboard Charger (OBC) | High-Density USB-C PD Adapter |
|
Use Scenario: Bidirectional 11 kW OBC using dual-phase totem-pole PFC + CLLLC DC/DC stage in compact automotive packaging. IC Role / Device Role / Timing Role: Main switching device in both AC/DC and DC/AC conversion stages; leverages reverse conduction capability for regenerative braking mode. Use Value: Kelvin source and 200 V/ns dv/dt rating prevent false triggering during fast bus transients in vehicle EMI environments. |
Use Scenario: 140 W ultra-compact USB-C PD 3.1 adapter with 30 mm × 30 mm × 30 mm form factor and 95% peak efficiency. IC Role / Device Role / Timing Role: Primary-side switch in high-frequency QR flyback + active clamp forward hybrid topology operating at 1.2 MHz. Use Value: 1.0 °C/W RthJC and PG-HDSOP-16 heatslug enable direct PCB copper thermal spreading-replacing discrete heatsinks and saving >250 mm³ volume. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar GaN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPH3205WS | 650 V Si MOSFET with 50 mΩ RDS(on), no Kelvin source, 35 nC QG, 170 °C Tj,max | Limited to ≤300 kHz hard switching; unsuitable for ZVS/ZCS due to Qrr = 28 nC | Select only when gate drive simplicity outweighs efficiency targets and cost sensitivity excludes GaN premium |
| GS66508T | 650 V GaN eHEMT with 50 mΩ RDS(on), 5.5 nC QG, but no integrated Kelvin source or heatslug | Requires external Kelvin routing and thermal pad design; lower power density than PG-HDSOP-16 | Prefer when board-level thermal constraints allow discrete heatsink mounting and layout complexity is acceptable |
Compared with TPH3205WS and GS66508T, IGLT65R045D2ATMA1 delivers superior power density via monolithic heatslug integration, eliminates layout-dependent Kelvin routing, and enables >1 MHz operation with zero Qrr-making it optimal for space-constrained, high-efficiency SMPS where thermal and EMI margins are critical.
Availability
IGLT65R045D2ATMA1 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, EV onboard chargers, and high-density USB-C PD adapters requiring stable component supply across multi-year production cycles.
Supply support for IGLT65R045D2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D infrastructure supporting industrial-grade reliability.
This part belongs to the CoolGaN™ G5 product line-designed specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and EV charging systems where silicon limitations constrain power density and thermal performance.
FAQ
What gate driver voltage and configuration is recommended for IGLT65R045D2ATMA1?
Infineon specifies −10 V to +6 V continuous gate-source voltage, with −25 V to +6 V pulsed rating. A dedicated low-impedance driver (e.g., 1EDN7512B) is required, connecting Gate (Pin 9) and Kelvin Source (Pin 10) to the driver's output and reference nodes respectively-ensuring gate loop inductance remains below 2 nH for stable 1 MHz operation.
Does IGLT65R045D2ATMA1 require external gate resistors or RC snubbers?
No external gate resistor is needed for basic operation due to its 1.3 Ω internal gate resistance, but a 2.2 Ω series resistor is recommended to damp high-frequency ringing. RC snubbers are not required in properly laid-out layouts with Kelvin source routing and <1 cm gate loop length-verified in Infineon's EVAL-IGLT65R045D2 reference design.
How does the Kelvin source (Pin 10) differ from the main source terminals (Pins 11–16)?
Pin 10 is a dedicated low-current sense node for gate drive reference, isolated from high di/dt current flow. Pins 11–16 carry full load current and connect to the PCB heatsink. This separation prevents source inductance from distorting gate voltage during switching transitions-critical for maintaining VGS stability above 500 kHz.
Is IGLT65R045D2ATMA1 suitable for bidirectional power flow applications?
Yes-its symmetric source-drain conduction (VSD = 2.0–2.4 V at 10 A) and zero Qrr enable efficient reverse current flow without body diode losses. It is validated in bidirectional CLLLC DC/DC converters and regenerative OBC modes, with no derating required up to 150 °C junction temperature.
IGLT65R045D2ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolGaN™
- Package/Case:
- 16-PowerSOP Module
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- 1.6V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6 nC @ 3 V
- Vgs (Max):
- -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 430 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 124W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-HDSOP-16-8
IGLT65R045D2ATMA1 FAQ
1.How can I place an order for IGLT65R045D2ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IGLT65R045D2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IGLT65R045D2ATMA1 reliable?
The price and inventory of IGLT65R045D2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLT65R045D2ATMA1 is usually 5 days.
3.What payment methods are accepted for IGLT65R045D2ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLT65R045D2ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IGLT65R045D2ATMA1?
IGLT65R045D2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IGLT65R045D2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IGLT65R045D2ATMA1?
For technical support, including IGLT65R045D2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLT65R045D2ATMA1 requirements.
6.How does Aetrix verify that IGLT65R045D2ATMA1 is sourced from the original manufacturer or authorized distributors?
All IGLT65R045D2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLT65R045D2ATMA1 meets industry standards.
7.What is the process for return or replacement of IGLT65R045D2ATMA1?
All IGLT65R045D2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLT65R045D2ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IGLT65R045D2ATMA1 part is unused and in its original packaging.
Return procedure for IGLT65R045D2ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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