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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW70N65DM6-4

Name: STW70N65DM6-4
Brand: STMicroelectronics
SKU: STW70N65DM6-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW70N65DM6-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: STW70N65DM6-4.pdf

Description:: MOSFET N-CH 650V 68A TO247-4

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Product details

Overview

STW70N65DM6-4 from STMicroelectronics is a high-voltage N-channel MDmesh DM6 Power MOSFET in TO-247-4 package, rated 650 V V_DS, 36 mΩ typ. R_DS(on) at 10 V V_GS, and 68 A continuous drain current at T_C = 25 °C. It features fast-recovery body diode (t_rr = 170 ns, Q_rr = 1.08 µC), 100% avalanche tested, and Zener-protected gate, designed for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STW70N65DM6-4 datasheet, STW70N65DM6-4 pinout, STW70N65DM6-4 application, or STW70N65DM6-4 equivalent, key selection criteria include R_DS(on) per area, Q_rr/t_rr performance, dv/dt ruggedness (100 V/ns), gate charge (Q_g = 125 nC), and the dedicated driver source pin enabling precise gate control in high-side configurations.

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology, integrating an optimized superjunction structure with a fast-recovery intrinsic body diode-achieving 36 mΩ typ. R_DS(on) and 1.08 µC Q_rr at 68 A. Its TO-247-4 package includes separate driver source (pin 3) and power source (pin 2) terminals to minimize source inductance and suppress common-source inductance-induced shoot-through during hard switching.

The device delivers extreme dv/dt ruggedness (100 V/ns) and 100% unclamped inductive switching (UIS) testing up to 1.8 J E_AS. Gate drive characteristics are optimized for ZVS operation: low C_iss (4900 pF), C_oss (280 pF), and C_rss (3 pF), with R_G = 2.3 Ω intrinsic gate resistance supporting fast, controlled turn-on/turn-off transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in full-bridge ZVS converters with margin for voltage spikes.
R_DS(on) max	40 mΩ - Enables <1.5 W conduction loss at 68 A, critical for high-power SMPS efficiency targets >96%.
Q_g	125 nC - Low total gate charge reduces driver power demand and supports high-frequency (>100 kHz) operation.
t_rr	170 ns (T_J = 25 °C) - Fast body diode recovery minimizes commutation losses and ringing in synchronous rectification.
dv/dt ruggedness	100 V/ns - Sustains rapid voltage transients without spurious turn-on, essential for reliable operation in hard-switched bridges.
E_AS	1.8 J - Rated single-pulse avalanche energy ensures robustness against inductive load transients without external snubbers.
R_thJC	0.28 °C/W - Low junction-to-case thermal resistance enables direct heatsink mounting for 450 W dissipation at T_C = 25 °C.

Pinout & Package

TO-247-4 package with isolated source terminals: Drain (pins 1 & tab), Gate (pin 4), Driver Source (pin 3), Power Source (pin 2). The dual-source configuration decouples gate loop inductance from power loop, enabling stable high-speed switching.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 & Tab	Drain	Main high-side power terminal; electrically connected to metal tab for low-inductance heatsink interface.
Pin 4	Gate	Control input; driven referenced to Driver Source (pin 3) to eliminate source inductance impact on gate waveform fidelity.
Pin 3	Driver Source	Dedicated low-inductance return path for gate driver, enabling accurate V_GS control during fast dV/dt transitions.
Pin 2	Power Source	High-current return path for main conduction; isolated from gate loop to prevent noise coupling into control circuitry.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 170 ns / Q_rr = 1.08 µC at 68 A - Reduces reverse recovery losses by >40% vs. standard superjunction MOSFETs in LLC resonant converters.
Extra driving source pin	Pin 3 (Driver Source) - Eliminates gate loop inductance effects, enabling clean 10 V V_GS switching even with 100 V/ns dv/dt on drain.
Low gate charge & capacitance	Q_g = 125 nC, C_iss = 4900 pF, C_rss = 3 pF - Supports efficient 100–300 kHz operation with minimal driver IC stress and reduced EMI.
100% avalanche tested	E_AS = 1.8 J - Guarantees ruggedness under unclamped inductive switching, removing need for external clamping circuits in PFC stages.
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection - Prevents gate oxide rupture during transient overvoltage events in industrial motor drives.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase IGBT/MOSFET inverter stage for 7.5 kW servo drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side switching element in 3L-TNPC topology, handling 68 A peak phase current with ZVS-assisted turn-on.

Use Value: 36 mΩ R_DS(on) and 170 ns t_rr reduce conduction + recovery losses by 22% versus prior-generation 650 V MOSFETs, enabling 98.1% system efficiency at full load.

Use Scenario: Primary-side switch in 3.5 kW server PSU using asymmetric half-bridge with ZVS phase-shift control.

IC Role / Device Role / Timing Role: Main power switch subjected to 520 V V_DS and 100 V/ns dv/dt during zero-voltage turn-on transitions.

Use Value: 100 V/ns dv/dt ruggedness and dedicated driver source pin ensure no false triggering, eliminating need for complex gate voltage clamping networks.

Renewable Energy Inverters

EV Onboard Chargers

Use Scenario: DC-link switching in 15 kW string solar inverter with transformerless topology and 1000 V DC input.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch managing 650 V blocking and 68 A RMS current in 50 kHz interleaved boost stage.

Use Value: 650 V V_DS rating with 1.8 J E_AS withstands lightning surge transients per IEC 61000-4-5, reducing system-level TVS requirements.

Use Scenario: Isolated DC-DC stage in 11 kW bidirectional OBC using dual-active-bridge (DAB) architecture.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET operating at 200 kHz with body diode conduction during dead-time intervals.

Use Value: Fast-recovery diode (Q_rr = 1.08 µC) cuts reverse recovery loss by 65% vs. standard Si devices, directly improving 94%→95.8% peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH70N65X2	R_DS(on) = 42 mΩ, Q_rr = 1.35 µC, no driver source pin, TO-247-3 package	Lacks separate driver source; higher Q_rr increases recovery loss in ZVS designs	Prefer when cost sensitivity outweighs ZVS efficiency gains and layout allows careful gate loop control
IPP65R041CFD7	R_DS(on) = 41 mΩ, Q_rr = 0.95 µC, driver source pin, TO-247-4 package, 650 V	Slightly lower Q_rr but higher C_iss (5400 pF) increases gate drive loss at >200 kHz	Prefer for ultra-high-frequency DAB converters where Q_rr dominates, but verify gate driver capability for higher C_iss

Compared with IXTH70N65X2 and IPP65R041CFD7, STW70N65DM6-4 uniquely balances ultra-low Q_rr, industry-leading dv/dt ruggedness, and dual-source layout flexibility-making it optimal for ZVS phase-shift and high-reliability industrial inverters where both efficiency and robustness are non-negotiable.

Availability

STW70N65DM6-4 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW70N65DM6-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 series-a family of 600–650 V superjunction MOSFETs engineered specifically for high-efficiency, high-reliability resonant and soft-switching power converters in datacenter, solar, and EV infrastructure.

FAQ

What is the purpose of the separate driver source (pin 3) and power source (pin 2) in the TO-247-4 package?

The driver source (pin 3) provides a dedicated low-inductance return path for the gate driver circuit, isolating gate loop dynamics from high-current power source (pin 2) transients. This prevents source inductance from distorting V_GS waveforms during fast dv/dt events, ensuring reliable switching in high-side configurations and ZVS topologies.

How does the 100 V/ns dv/dt ruggedness specification translate to real-world reliability?

This rating means the device maintains stable off-state behavior when drain voltage rises at up to 100 V/ns-exceeding typical hard-switched bridge transients (30–60 V/ns). It eliminates false turn-on without external gate clamping, verified across temperature and voltage stress conditions per ST's UIS and dv/dt test protocols in DS13144.

Can STW70N65DM6-4 replace older MDmesh devices like STW70N65M5 in existing designs?

Yes, with layout verification: it offers lower R_DS(on) (36 mΩ vs. 42 mΩ), improved Q_rr (1.08 µC vs. 1.5 µC), and same TO-247-4 footprint. However, the driver source pin requires PCB routing updates to isolate gate return from power ground, and gate resistor values may need optimization due to lower Q_g.

What thermal derating applies above T_C = 25 °C?

Continuous drain current drops linearly from 68 A at T_C = 25 °C to 43 A at T_C = 100 °C, per Table 1. Junction temperature must stay ≤150 °C; with R_thJC = 0.28 °C/W, maximum allowable power dissipation at T_C = 100 °C is 179 W, requiring appropriate heatsinking and airflow per Figure 2 SOA curves.

STW70N65DM6-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STW70N65DM6-4 FAQ

1.How can I place an order for STW70N65DM6-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW70N65DM6-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW70N65DM6-4 reliable?

The price and inventory of STW70N65DM6-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW70N65DM6-4 is usually 5 days.

3.What payment methods are accepted for STW70N65DM6-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW70N65DM6-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW70N65DM6-4?

STW70N65DM6-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW70N65DM6-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW70N65DM6-4?

For technical support, including STW70N65DM6-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW70N65DM6-4 requirements.

6.How does Aetrix verify that STW70N65DM6-4 is sourced from the original manufacturer or authorized distributors?

All STW70N65DM6-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW70N65DM6-4 meets industry standards.

7.What is the process for return or replacement of STW70N65DM6-4?

All STW70N65DM6-4 units undergo pre-shipment inspection (PSI). If there is an issue with STW70N65DM6-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW70N65DM6-4 part is unused and in its original packaging.

Return procedure for STW70N65DM6-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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