Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R034M2HXKSA1

Name: IMZC120R034M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R034M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IMZC120R034M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R034M2HXKSA1.pdf

Description:: IMZC120R034M2HXKSA1

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,087

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IMZC120R034M2HXKSA1 from Infineon is a 1200 V, 34 mΩ silicon carbide MOSFET in PG-TO247-4-U07 package with Kelvin source configuration, rated for 39 A DC current at T_C = 100°C and short-circuit withstand time of 2 µs at V_GS(on) = 15 V. It delivers low switching losses and operates up to T_vj = 200°C for overload conditions, targeting high-efficiency 3-phase inverters in EV charging stations.

For engineers reviewing the IMZC120R034M2HXKSA1 datasheet, IMZC120R034M2HXKSA1 pinout, IMZC120R034M2HXKSA1 application, or IMZC120R034M2HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, gate threshold voltage (4.2 V typ), robust body diode hard-commutation capability, and .XT interconnection thermal performance.

Technical Context

This CoolSiC™ G2 device uses trench-gate SiC MOSFET technology with integrated Kelvin source terminal to eliminate source inductance effects during high-speed switching. Its 4.2 V gate threshold voltage ensures immunity to parasitic turn-on under dV/dt stress up to 200 kV/µs, and the body diode supports unidirectional hard commutation without external anti-parallel diodes.

The .XT interconnection technology reduces junction-to-case thermal resistance to 0.47–0.61 K/W, enabling higher power density in compact heatsink designs. Gate drive requirements are optimized for Infineon's 1ED family drivers, with recommended V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V to maintain safe operation across T_vj = –55°C to 200°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 1000 V DC bus systems with 20% safety margin for solar string inverters and ESS applications.
R_DS(on)	34 mΩ @ V_GS = 18 V, T_vj = 25°C - Delivers low conduction loss at room temperature; rises to 80 mΩ at 175°C, supporting stable thermal design.
I_D_DC	39 A @ T_C = 100°C - Specifies maximum continuous current under realistic heatsink conditions, not ideal lab limits.
t_SC	2 µs @ V_DD ≤ 800 V, V_GS(on) = 15 V - Defines safe fault-clearing window for protection circuitry in UPS and welding inverters.
V_GS(th)	4.2 V typ @ T_vj = 25°C - Higher than silicon MOSFETs, reducing risk of unintended turn-on during fast transients.
E_on + E_off	302 µJ @ T_vj = 25°C - Total switching energy at 800 V, 20 A enables >100 kHz operation with minimal snubber loss.
Q_G	45 nC - Low gate charge enables fast switching with moderate gate driver output current (e.g., 2 A peak).

Pinout & Package

IMZC120R034M2HXKSA1 is housed in PG-TO247-4-U07 package - a 4-pin variant of TO-247 with isolated Kelvin source terminal for accurate gate control and reduced dynamic R_DS(on) error. The package features .XT interconnection for enhanced thermal cycling reliability and lower R_th(j-c).

Pin/Terminal	Circuit Role	Design Meaning
1 - Drain	Main high-side power path	Connected to DC bus or phase leg output; carries full load current and withstands 1200 V blocking.
2 - Source	Main power return path	Carries full load current to ground/negative rail; must be routed with low-inductance layout to minimize shoot-through risk.
3 - Kelvin Sense	Gate reference for source potential	Provides dedicated low-current return for gate driver feedback, eliminating source inductance impact on switching timing and Miller immunity.
4 - Gate	Control input	Receives gate drive signal; requires separate gate resistor network referenced to Kelvin sense, not main source.

Key Features

Feature	Design Value
Robust body diode	Rated for hard commutation with 5.5 V forward drop at 20 A, 25°C; supports bidirectional current flow without external diode in totem-pole PFC.
.XT interconnection	Reduces R_th(j-c) to 0.47 K/W min, improving thermal derating by ~15% over standard wire-bonded TO-247 packages.
Short-circuit ruggedness	2 µs withstand time at 15 V gate drive enables deterministic fault response using fixed-time blanking or desaturation detection.
High dV/dt immunity	Characterized up to 200 kV/µs - eliminates need for negative gate turn-off in noisy industrial environments like welding equipment.
Wide T_vj range	Rated from –55°C to 200°C (overload), allowing operation in harsh ambient conditions such as outdoor EV chargers or solar farms.

Applications

EV Charging Station

Solar String Inverter

Use Scenario: 3-phase AC/DC rectification and DC/DC isolation stages in 22 kW on-board and off-board chargers.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC and isolated DC/DC LLC primary side.

Use Value: 34 mΩ R_DS(on) and low Q_G enable >98% efficiency at 100 kHz switching, reducing heatsink size by 30% vs. Si IGBTs.

Use Scenario: DC optimizers and microinverters managing individual PV panel output under partial shading.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-frequency switching element in buck-boost and isolated flyback topologies.

Use Value: Body diode robustness allows zero-voltage switching without external diode, cutting BOM cost and PCB area by 25%.

Industrial UPS

Energy Storage System (ESS)

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output with <1 ms transfer time during grid failure.

IC Role / Device Role / Timing Role: Inverter bridge switch handling bidirectional power flow between battery bank and AC output stage.

Use Value: 2 µs short-circuit rating enables precise fault detection and recovery, meeting UL 1778 Class I safety requirements.

Use Scenario: Bidirectional DC/DC converters coupling Li-ion battery stacks (800–1000 V) with medium-voltage AC grids.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology managing regenerative braking and grid export.

Use Value: 200°C overload capability supports transient 150% power bursts during grid frequency regulation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0032120K	R_DS(on) = 32 mΩ, same V_DSS, but TO-247-4L package lacks Kelvin sense; higher dynamic R_DS(on) error at >50 kHz.	Less suitable for high-precision gate control in fast-switching totem-pole PFC where source inductance dominates timing jitter.	Select only if gate driver layout cannot accommodate Kelvin routing or cost sensitivity outweighs efficiency gain.
STW48N120K5	R_DS(on) = 48 mΩ, V_DSS = 1200 V, TO-247-4 package with Kelvin source; higher conduction loss increases thermal load by ~22% at full load.	Acceptable for lower-power (<15 kW) UPS and ESS where thermal margin exists, but requires larger heatsink or derating.	Prefer when long-term supply continuity is prioritized over peak efficiency, as STW48N120K5 has broader global distribution.

Compared with C3M0032120K and STW48N120K5, IMZC120R034M2HXKSA1 offers superior thermal performance via .XT interconnect and tighter V_GS(th) distribution, enabling more aggressive gate drive timing and higher power density in space-constrained EV charger modules.

Availability

IMZC120R034M2HXKSA1 is available at Aetrix Electronics and suitable for EV charging stations, solar string inverters, and industrial UPS systems requiring stable component supply, extended lifecycle support, and traceable sourcing for automotive-grade production.

Supply support for IMZC120R034M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the CoolSiC™ G2 product line, engineered specifically for high-efficiency, high-reliability power conversion in 1000 V-class systems including EV infrastructure and grid-tied solar inverters.

FAQ

What gate driver is recommended for IMZC120R034M2HXKSA1?

Infineon recommends the 1ED34xx and 1ED38xx families of single-channel isolated gate drivers, configured with V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V. These drivers provide sufficient peak current (>2 A) to charge the 45 nC gate capacitance within nanoseconds while maintaining tight timing control via Kelvin source feedback.

Can IMZC120R034M2HXKSA1 replace silicon IGBTs directly in existing designs?

No direct drop-in replacement is possible due to different gate drive requirements, Kelvin source pinout, and absence of built-in freewheeling diode. Layout changes-including separate Kelvin source trace, gate resistor repositioning, and revised dead-time settings-are mandatory to leverage its low switching loss and avoid oscillation.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum transient V_GS is –10 V to +25 V for pulse widths ≤0.5 µs (duty cycle <1%). For sustained operation, static V_GS must remain within –7 V to +23 V per IPC-9592B. Exceeding these limits risks permanent gate oxide damage.

How does the body diode performance compare to discrete SiC Schottky diodes?

The integrated body diode exhibits 5.5 V forward voltage at 20 A and 25°C-higher than typical 1.5–2.5 V for discrete SiC Schottky diodes-but provides guaranteed hard-commutation ruggedness and eliminates layout complexity. It is not intended for continuous freewheeling but excels in synchronous rectification with controlled reverse recovery.

IMZC120R034M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 20A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 6.4mA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1510 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 244W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R034M2HXKSA1 FAQ

1.How can I place an order for IMZC120R034M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R034M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R034M2HXKSA1 reliable?

The price and inventory of IMZC120R034M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R034M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R034M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R034M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R034M2HXKSA1?

IMZC120R034M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R034M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R034M2HXKSA1?

For technical support, including IMZC120R034M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R034M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R034M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R034M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R034M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R034M2HXKSA1?

All IMZC120R034M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R034M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R034M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R034M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.