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Vishay Siliconix SIHH125N65E-T1-GE3
- Part No.:
- SIHH125N65E-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
SIHH125N65E-T1-GE3.pdf
- Description:
- E SERIES POWER MOSFET 650 V (D-
- Quantity:
- Payment:
- Shipping:
Inventory:9,506
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Product details
Overview
SIHH125N65E-T1-GE3 from Vishay Siliconix is a 650 V, 25 A N-channel Power MOSFET in PowerPAK® 8 × 8 package with Kelvin source connection, optimized for high-efficiency switch-mode power supplies and PFC stages. It features RDS(on) = 0.106 Ω (typ, VGS = 10 V), Qg = 38 nC (typ), and avalanche-rated UIS capability (EAS = 81 mJ).
For engineers reviewing the SIHH125N65E-T1-GE3 datasheet, SIHH125N65E-T1-GE3 pinout, SIHH125N65E-T1-GE3 application, or SIHH125N65E-T1-GE3 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), reduced gate noise via Kelvin source, and validated performance in telecom rectifiers and solar PV inverters.
Technical Context
This E-series MOSFET employs 4th-generation silicon technology with optimized charge distribution to minimize switching losses and conduction losses simultaneously. Its Co(er) = 81 pF (energy-related) and Ciss = 1938 pF enable fast, low-loss hard-switching at 520 V bus voltages.
The Kelvin source configuration isolates the power source path from the gate drive return, suppressing common-source inductance effects and improving gate control fidelity during high di/dt transitions. The device is rated for repetitive operation up to TJ = 150 °C with RthJC = 0.55 °C/W (typ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - Supports 400 V AC input PFC and 520 V DC bus designs with margin |
| RDS(on) typ @ 10 V | 0.106 Ω - Enables <1.6 W conduction loss at 12 A continuous drain current |
| Qg max | 57 nC - Determines gate driver power requirement and turn-on speed in hard-switched topologies |
| EAS | 81 mJ - Confirmed unclamped inductive switching robustness without external snubbing |
| ID cont @ TC = 100 °C | 16 A - Specifies usable current in thermally constrained industrial enclosures |
| Co(er) | 81 pF - Low energy-related output capacitance reduces turn-off loss in ZVS-limited converters |
| RthJC typ | 0.55 °C/W - Enables high-power density thermal design with direct heatsink mounting |
Pinout & Package
SIHH125N65E-T1-GE3 uses the PowerPAK® 8 × 8 surface-mount package (8.0 mm × 8.0 mm × 1.0 mm), featuring exposed drain pad for thermal dissipation and four dedicated terminals: Gate (Pin 1), Kelvin Source (Pin 2), Power Source (Pin 3), Drain (Pin 4).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Main gate control terminal; connects to gate driver output with low-inductance trace |
| Pin 2 | Kelvin Source | Separate low-current source return for gate loop; eliminates common-source inductance impact on switching |
| Pin 3 | Power Source | High-current source path; soldered to large PCB copper pour for current conduction and thermal spreading |
| Pin 4 | Drain | Exposed copper pad on bottom of package; electrically and thermally connected to heatsink or internal ground plane |
Key Features
| Feature | Design Value |
|---|---|
| 4th-generation E-series silicon | Reduces RDS(on) × Qg FOM by >25% vs. prior generation, lowering combined switching + conduction loss |
| Kelvin source connection | Eliminates gate loop inductance coupling, enabling stable 100+ V/ns dv/dt operation without oscillation |
| Avalanche energy rating (UIS) | 81 mJ single-pulse rating allows reliable operation under transient overloads without derating |
| Low Co(er) | 81 pF enables faster voltage transition during turn-off, reducing Eoff in high-frequency SMPS |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and Vishay's material categorization standard (doc#99912) |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switching in 3.3 kW 48 V output telecom rectifier with 96% efficiency target. IC Role / Device Role / Timing Role: High-side switching element in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: Low Qg (38 nC typ) and RDS(on) (0.106 Ω) reduce gate drive loss and conduction loss, directly supporting 96% efficiency at full load. |
Use Scenario: Active clamp forward converter in 1U server PSU handling 230 V AC input. IC Role / Device Role / Timing Role: Main switch with synchronous rectification support; handles 520 V DC link and 25 A peak current. Use Value: Kelvin source minimizes gate ringing during 100 A/μs di/dt transitions, ensuring clean turn-off in tight layout constraints. |
| Solar PV Inverter | Industrial Motor Drive |
Use Scenario: DC-DC boost stage in string-level solar inverter converting 300–1000 V DC to 700 V DC bus. IC Role / Device Role / Timing Role: Unidirectional boost switch operating at 50–100 kHz with 650 V blocking requirement. Use Value: 650 V VDS rating and 81 mJ EAS ensure safe operation during grid fault-induced voltage surges. |
Use Scenario: Inverter leg switch in 7.5 kW HVAC variable-frequency drive with IGBT replacement goal. IC Role / Device Role / Timing Role: Hard-switched N-channel switch in three-phase inverter bridge, replacing discrete IGBT + freewheeling diode. Use Value: Integrated body diode with trr = 345 ns (typ) and Qrr = 4.4 μC enables efficient freewheeling without external SiC diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW62N65M5 | RDS(on) = 0.115 Ω (typ), Qg = 62 nC (max), TO-247 package, no Kelvin source | Larger footprint and higher gate drive loss; requires external gate resistor tuning for noise immunity | Preferred where legacy TO-247 heatsinking exists and layout space permits larger package |
| IXFH30N65X2 | RDS(on) = 0.135 Ω (typ), Qg = 45 nC (max), TO-247, no Kelvin source, enhanced ruggedness | Higher conduction loss but superior short-circuit withstand time (3 μs); no integrated Kelvin path | Selected when system-level short-circuit protection dominates over efficiency optimization |
Compared with STW62N65M5 and IXFH30N65X2, SIHH125N65E-T1-GE3 delivers lower total power loss in compact layouts due to its Kelvin source and best-in-class FOM, while requiring tighter gate loop control and compatible SMT assembly processes.
Availability
SIHH125N65E-T1-GE3 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar PV inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIHH125N65E-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The E Series Power MOSFET product line targets high-frequency, high-efficiency power conversion systems including datacenter PSUs, renewable energy inverters, and industrial motor drives-designed to replace older planar technologies with trench-based silicon offering superior FOM.
FAQ
What is the maximum continuous drain current rating for SIHH125N65E-T1-GE3 at 100 °C case temperature?
The SIHH125N65E-T1-GE3 supports 16 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 25 A rating at TC = 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 100 °C under full-load conditions.
Does SIHH125N65E-T1-GE3 include an integrated body diode, and what are its key recovery parameters?
Yes, SIHH125N65E-T1-GE3 integrates a robust body diode with trr = 345 ns (typ), Qrr = 4.4 μC (typ), and IRRM = 22 A (typ) at TJ = 25 °C. These values are measured under standardized conditions (IF = 12 A, di/dt = 100 A/μs, VR = 25 V) and enable reliable freewheeling in hard-switched topologies without external diode supplementation.
How does the Kelvin source connection in SIHH125N65E-T1-GE3 improve switching performance?
The Kelvin source connection in SIHH125N65E-T1-GE3 separates the gate return path from the high-current source path, eliminating common-source inductance that causes gate voltage undershoot and oscillation. This allows stable switching at dv/dt up to 100 V/ns and improves timing accuracy in high-frequency PFC and resonant converters where precise gate control is critical.
What is the thermal resistance from junction to case (RthJC) for SIHH125N65E-T1-GE3, and how is it measured?
The SIHH125N65E-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 0.55 °C/W, with a maximum of 0.72 °C/W. This value is measured between the silicon die junction and the exposed drain pad (Pin 4), per JEDEC JESD51-14 standards, and assumes full-surface thermal interface contact to a heatsink. It enables accurate thermal modeling for high-power-density board layouts.
Is SIHH125N65E-T1-GE3 suitable for use in automotive applications?
No, SIHH125N65E-T1-GE3 is not qualified for automotive applications. Its datasheet specifies an operating junction temperature range of –55 °C to +150 °C but does not include AEC-Q101 qualification, PPAP documentation, or automotive-specific reliability testing. For automotive-grade alternatives, consult Vishay's AQ-series MOSFET portfolio.
SIHH125N65E-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- E
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1938 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 174W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 8 x 8
SIHH125N65E-T1-GE3 FAQ
1.How can I place an order for SIHH125N65E-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIHH125N65E-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIHH125N65E-T1-GE3 reliable?
The price and inventory of SIHH125N65E-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIHH125N65E-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIHH125N65E-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIHH125N65E-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIHH125N65E-T1-GE3?
SIHH125N65E-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIHH125N65E-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIHH125N65E-T1-GE3?
For technical support, including SIHH125N65E-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIHH125N65E-T1-GE3 requirements.
6.How does Aetrix verify that SIHH125N65E-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIHH125N65E-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIHH125N65E-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIHH125N65E-T1-GE3?
All SIHH125N65E-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIHH125N65E-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIHH125N65E-T1-GE3 part is unused and in its original packaging.
Return procedure for SIHH125N65E-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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