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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R1-80CSFJ

Name: PSMN1R1-80CSFJ
Brand: Nexperia USA Inc.
SKU: PSMN1R1-80CSFJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R1-80CSFJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMN1R1-80CSFJ.pdf

Description:: NEXTPOWER 80 V, 1.16 MOHM, N-CHA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN1R1-80CSF from Nexperia is a NextPower 80 V, 1.16 mΩ N-channel MOSFET in CCPAK1212i (SOT8005A) package, rated for 385 A continuous drain current at T_mb = 25 °C and qualified to 175 °C junction temperature. It features low Q_rr (68 nC), strong avalanche energy rating (1300 mJ), and inverted top-side cooling architecture-designed for high-power industrial motor control and battery protection circuits.

For engineers reviewing the PSMN1R1-80CSF datasheet, PSMN1R1-80CSF pinout, PSMN1R1-80CSF application, or PSMN1R1-80CSF equivalent, key selection criteria include R_DS(on) temperature stability (2.7 mΩ max at 175 °C), gate charge (242 nC typ), thermal resistance to mounting base (0.123 K/W), and JEDEC-qualified CCPAK1212i package compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs an optimized trench-gate superjunction structure enabling ultra-low R_DS(on) × Q_G figure-of-merit (FOM) for high-frequency switching efficiency. Its inverted package places the drain on the top thermal pad, enabling direct heatsink attachment and minimizing thermal path resistance.

The device integrates 100% avalanche testing per unit, supports standard-level 10 V gate drive, and delivers robust body diode performance with reverse recovery time of 61 ns and recovered charge of 68 nC-critical for synchronous rectification and OR-ing applications where diode conduction occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V–60 V bus systems with margin against transients
R_DS(on)	0.92–1.16 mΩ @ 25 °C - Enables <1 W conduction loss at 300 A, critical for high-current BLDC inverters
I_D (cont)	385 A @ T_mb = 25 °C - Validated continuous current under real thermal mounting conditions
Q_G(tot)	242 nC typ - Determines gate driver power requirement and switching speed trade-off
R_th(j-mb)	0.123 K/W - Enables >900 W dissipation with <12 K ΔT to heatsink, supporting compact thermal design
E_AS	1300 mJ - Avalanche energy rating verified per unit, allowing safe operation during inductive turn-off faults
Q_r	68 nC - Low recovered charge reduces diode switching losses and voltage spiking in half-bridge freewheeling

Pinout & Package

CCPAK1212i (SOT8005A) is a 12-terminal surface-mount copper clip package measuring 12 mm × 12 mm × 2.5 mm, featuring an exposed drain-connected thermal pad on top for top-side cooling and JEDEC-standardized footprint for second-source compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1–5	Source	Five parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching
6	Gate	Single gate input with 1.12 Ω typical gate resistance-optimized for 5 Ω external gate resistor in hard-switching
7–12	Drain	Six drain terminals plus top-mounted thermal pad provide low-inductance, high-current drain return path
mb	Mounting Base	Exposed drain-connected copper area-mechanically and thermally coupled to heatsink, not electrically isolated

Key Features

Feature	Design Value
Top-side cooled CCPAK1212i package	Enables direct heatsink mounting without via arrays or thermal vias-reducing board layer count and thermal impedance by >40%
Low Q_rr (68 nC)	Minimizes diode switching losses and EMI in hard-commutated full-bridge configurations
100% avalanche tested	Guarantees single-pulse ruggedness up to 1300 mJ-eliminates need for external snubbers in motor drive fault conditions
JEDEC SOT8005A footprint	Ensures drop-in compatibility with alternate suppliers' 80 V/300+ A MOSFETs, simplifying supply chain risk mitigation
R_DS(on) temp coefficient	Negative dR/dT below 100 °C enables inherent current sharing in paralleled configurations

Applications

Battery Protection

BLDC Motor Control

Use Scenario: High-current e-bike or UPS battery disconnect during overcurrent or short-circuit events.

IC Role / Device Role / Timing Role: Primary high-side switch in active protection FET array, operating in linear or saturated mode during fault interruption.

Use Value: 385 A continuous rating and 2367 A peak current capability enable single-device protection for 1–3 kW battery packs without paralleling.

Use Scenario: Inverter leg switch in 1–5 kW brushless DC motor drives for HVAC compressors or power tools.

IC Role / Device Role / Timing Role: Low-side or high-side power switch in 3-phase bridge, switching at 20–50 kHz with synchronous rectification.

Use Value: 1.16 mΩ R_DS(on) and 61 ns t_rr reduce conduction + switching losses by >15% vs. legacy TO-263 devices at 400 V bus.

High-Power Half-Bridge

OR-ing Circuit

Use Scenario: Primary switching element in 1.5 kW server PSU LLC resonant half-bridge primary side.

IC Role / Device Role / Timing Role: High-voltage, high-current switch handling 80 V DC link with zero-voltage switching transitions.

Use Value: 0.123 K/W R_th(j-mb) allows >900 W dissipation with <10 K rise to heatsink-enabling smaller heatsinks than D²PAK alternatives.

Use Scenario: Redundant power path selector in 48 V telecom or data center power distribution units.

IC Role / Device Role / Timing Role: Active OR-ing FET replacing Schottky diodes to minimize forward voltage drop and heat generation.

Use Value: 0.75 V V_SD and 68 nC Q_r cut conduction loss by 60% and reverse recovery loss by 45% vs. 40 V Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N8	R_DS(on) = 2.6 mΩ @ 25 °C; TO-220FP package; no top-side cooling	Limited to <120 A continuous due to higher R_DS(on) and inferior thermal path	Choose only if through-hole assembly or legacy footprint required; avoid for >200 A designs
Vishay SiR626DP	R_DS(on) = 1.25 mΩ @ 25 °C; PowerPAK 1212-8 package; bottom-side cooling only	Requires thermal vias and multilayer PCB; R_th(j-a) 2× higher than CCPAK1212i	Acceptable for space-constrained designs where top-side heatsinking is impossible

Compared with IPP026N08N8 and SiR626DP, PSMN1R1-80CSF delivers superior thermal performance (0.123 K/W vs. ≥0.3 K/W), higher current density (385 A vs. ≤220 A), and lower Q_r, making it optimal for thermally constrained, high-efficiency industrial inverters and OR-ing modules.

Availability

PSMN1R1-80CSF is available at Aetrix Electronics and suitable for battery protection, BLDC motor control, high-power half-bridge converters, and OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for PSMN1R1-80CSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

PSMN1R1-80CSF belongs to the NextPower series-engineered specifically for high-current, high-efficiency switching in industrial motor drives, battery systems, and power conversion where thermal management and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for PSMN1R1-80CSF under real-world PCB mounting conditions?

The datasheet specifies 385 A continuous drain current at T_mb = 25 °C with proper heatsinking. This value was validated in application tests using a 70 µm copper FR4 board with 25.4 mm² thermal pad. Actual current is limited by PCB layout, heatsink interface quality, and ambient temperature-not by the die itself.

Does PSMN1R1-80CSF require negative gate voltage for reliable turn-off in high-dV/dt environments?

No. The device is specified for standard-level gate drive with V_GS = 0 V to 10 V. Its gate threshold voltage is 2–4 V (typ 3 V) at 25 °C and remains ≥1.52 V at 175 °C, ensuring noise immunity without negative bias. Gate drive design should maintain V_GS ≥ 12 V absolute max and use low-inductance routing to suppress ringing.

Can PSMN1R1-80CSF be used in parallel configurations, and what layout considerations apply?

Yes-its negative R_DS(on) temperature coefficient promotes current sharing. Layout must ensure matched gate loop inductance (use Kelvin source connections), symmetrical drain/source copper areas, and identical thermal paths to heatsink. Avoid shared gate resistors; use individual 5 Ω resistors per device.

Is the CCPAK1212i package RoHS-compliant and lead-free compatible?

Yes. The device is Ha-free and RoHS compliant per EU Directive 2011/65/EU. The package uses lead-free solder-compatible terminations and supports standard Pb-free reflow profiles (peak 260 °C). The recommended stencil thickness is 0.1 mm, and footprint dimensions are defined in Figure 19 of the datasheet.

PSMN1R1-80CSFJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 400A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 1.16mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15363 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 1.071kW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212i

PSMN1R1-80CSFJ FAQ

1.How can I place an order for PSMN1R1-80CSFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R1-80CSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R1-80CSFJ reliable?

The price and inventory of PSMN1R1-80CSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R1-80CSFJ is usually 5 days.

3.What payment methods are accepted for PSMN1R1-80CSFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R1-80CSFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R1-80CSFJ?

PSMN1R1-80CSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R1-80CSFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R1-80CSFJ?

For technical support, including PSMN1R1-80CSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R1-80CSFJ requirements.

6.How does Aetrix verify that PSMN1R1-80CSFJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R1-80CSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R1-80CSFJ meets industry standards.

7.What is the process for return or replacement of PSMN1R1-80CSFJ?

All PSMN1R1-80CSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R1-80CSFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R1-80CSFJ part is unused and in its original packaging.

Return procedure for PSMN1R1-80CSFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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