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Nexperia USA Inc. PSMN1R4-100CSFJ
- Part No.:
- PSMN1R4-100CSFJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Datasheet:
-
PSMN1R4-100CSFJ.pdf
- Description:
- NEXTPOWER 100 V, 1.35 MOHM, N-CH
- Quantity:
- Payment:
- Shipping:
Inventory:9,136
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Product details
Overview
PSMN1R4-100CSF from Nexperia is a 100 V, 1.35 mΩ N-channel MOSFET in the CCPAK1212i (SOT8005A) package, qualified to 175 °C junction temperature and rated for 355 A continuous drain current at Tmb = 25 °C. It features low QGD (46 nC typ), strong avalanche ruggedness (1130 mJ EAS), and inverted top-side cooling architecture-designed for high-power BLDC motor control and battery protection circuits.
For engineers reviewing the PSMN1R4-100CSF datasheet, PSMN1R4-100CSF pinout, PSMN1R4-100CSF application, or PSMN1R4-100CSF equivalent, key selection criteria include RDS(on) temperature stability up to 175 °C, normalized thermal resistance to mounting base (0.123 K/W typ), and gate charge profile optimized for high-frequency hard-switching in half-bridge configurations.
Technical Context
This NextPower MOSFET employs an optimized trench-gate process with enhanced body diode softness and low reverse recovery charge (Qr = 74 nC), enabling efficient synchronous rectification and OR-ing applications. Its CCPAK1212i package integrates a copper clip die attach and exposed drain thermal pad directly bonded to the PCB mounting base.
The device operates with standard-level gate drive (VGS(th) = 3.1 V typ at 25 °C, -9.4 mV/K tempco), supports 20 V max gate-source voltage, and delivers stable RDS(on) across temperature (2.4 mΩ max at Tj = 175 °C, VGS = 10 V, ID = 25 A).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum - supports 48 V and 800 V bus architectures with margin for transient overvoltage in industrial power stages. |
| RDS(on) | 1.35 mΩ max at 25 °C - enables <1 W conduction loss at 355 A, critical for high-current motor phase legs. |
| ID(cont) | 355 A at Tmb = 25 °C - validated continuous current rating, limited in practice by PCB thermal design and mounting base temperature. |
| QGD | 46 nC typical - reduces Miller-induced switching losses and improves dv/dt immunity in high-side switching. |
| EAS | 1130 mJ non-repetitive - provides robust unclamped inductive switching capability without external snubbers. |
| Rth(j-mb) | 0.123 K/W typical - enables direct thermal coupling to heatsink via top-side cooling, bypassing traditional TO-263 thermal bottlenecks. |
| Qr | 74 nC typical - minimizes diode recovery spiking and EMI in bidirectional energy transfer applications like OR-ing. |
Pinout & Package
CCPAK1212i (SOT8005A) is a 12-terminal surface-mount copper clip package measuring 12 mm × 12 mm × 2.5 mm, featuring an inverted layout with source terminals on the top side and drain-connected mounting base on the bottom for top-side cooling. The package is JEDEC-registered and compatible with standard reflow profiles (peak 260 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–5 | Source | Five parallel top-side source connections reduce source inductance and improve current sharing in paralleled configurations. |
| 6 | Gate | Single gate input with 1.02 Ω typical gate resistance - optimized for 5 Ω external gate resistor in 100 kHz–500 kHz switching. |
| 7–12 | Drain | Six top-side drain terminals plus mounting base (pin mb) - provide low-inductance, high-current drain path to PCB plane. |
| mb | Mounting Base / Drain | Exposed copper thermal pad electrically connected to drain - serves as primary thermal interface and current return path. |
Key Features
| Feature | Design Value |
|---|---|
| Inverted top-side cooling | Enables direct heatsink attachment to component top surface, eliminating thermal interface material between package and heatsink. |
| Low Qrr and soft body diode | 74 nC recovered charge with controlled trr (62 ns) reduces voltage overshoot and EMI during commutation in half-bridge freewheeling. |
| Avalanche-rated and 100% tested | Each unit undergoes unclamped inductive switching test to 1130 mJ - ensures reliability in fault-tolerant power stage designs. |
| JEDEC-qualified CCPAK1212i | SOT8005A footprint guarantees second-source compatibility and eliminates proprietary tooling dependencies in production. |
| Ha-free and RoHS compliant | Meets EU Directive 2011/65/EU and IPC-1752A - suitable for consumer, industrial, and medical equipment with strict chemical compliance requirements. |
Applications
| Battery Protection Circuit | High-Power Half-Bridge Inverter |
|---|---|
|
Use Scenario: Bidirectional current control in 48 V Li-ion battery packs with overcurrent and short-circuit protection. IC Role / Device Role / Timing Role: High-side N-channel switch in active OR-ing configuration, handling up to 355 A continuous discharge current. Use Value: Low RDS(on) minimizes power loss during normal operation; strong avalanche rating withstands load dump transients without derating. |
Use Scenario: Upper switch in 5–20 kW BLDC motor drives for industrial automation and e-mobility subsystems. IC Role / Device Role / Timing Role: Fast-switching, high-current power FET in hard-switched half-bridge topology operating at 20–100 kHz. Use Value: Optimized QG × RDS(on) figure of merit enables high efficiency at elevated switching frequencies while maintaining thermal headroom. |
| OR-ing Power Path Controller | Industrial DC-DC Converter Primary Switch |
|
Use Scenario: Redundant 12–48 V power supply combining with automatic failover in telecom and server PSUs. IC Role / Device Role / Timing Role: Low-loss forward conduction path with fast reverse recovery for seamless switchover between supplies. Use Value: 74 nC Qr and soft diode behavior suppress voltage spikes during reverse recovery, reducing need for snubber networks. |
Use Scenario: Primary-side switch in isolated 1–3 kW LLC or phase-shifted full-bridge converters for factory automation power systems. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling 100 V bus with tight duty-cycle control. Use Value: 175 °C qualification and 0.123 K/W Rth(j-mb) support sustained operation under high ambient temperatures and constrained airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP026N10N5 | 100 V, 2.6 mΩ, TO-220 package; higher RDS(on), no top-side cooling, lower ID (220 A). | Requires heatsink on tab side; unsuitable for ultra-low-inductance layouts or space-constrained top-cooled modules. | Select when legacy TO-220 footprint or lower gate charge (QG = 120 nC) is prioritized over current density. |
| Vishay SiR626DP | 100 V, 1.45 mΩ, PowerPAK® 1212-8; 8-pin, smaller footprint (12 mm × 12 mm), but only 220 A ID rating. | Limited thermal mass and single-drain connection restrict use in >2 kW continuous applications. | Select when board area is constrained and peak currents remain below 220 A with aggressive thermal management. |
Compared with IPP026N10N5 and SiR626DP, PSMN1R4-100CSF delivers highest continuous current (355 A), lowest thermal resistance to mounting base (0.123 K/W), and unique top-side cooling-making it optimal for compact, high-power-density industrial inverters where thermal and layout constraints dominate.
Availability
PSMN1R4-100CSF is available at Aetrix Electronics and suitable for battery protection systems, BLDC motor drives, high-power OR-ing circuits, and industrial DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for PSMN1R4-100CSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.
This device belongs to the NextPower series-engineered specifically for high-efficiency, high-current power conversion in demanding industrial and high-reliability applications where thermal performance and avalanche robustness are critical.
FAQ
What is the maximum continuous drain current for PSMN1R4-100CSF under real-world PCB conditions?
The datasheet specifies 355 A at Tmb = 25 °C, but practical current is limited by PCB copper area, thermal vias, and heatsink interface. With a 25.4 mm² 70 µm copper pad per side and forced air cooling, sustained operation above 250 A requires careful thermal modeling using the provided Zth(j-mb) curves and Rth(j-a) = 29 K/W baseline.
Can PSMN1R4-100CSF be used in synchronous rectification mode?
Yes-the device's low Qr (74 nC), soft reverse recovery (trr = 62 ns), and low VSD (0.76 V typ) make it suitable for synchronous rectification in high-current DC-DC converters. However, gate drive must actively control the body diode conduction period to avoid shoot-through; dead-time optimization is required per application.
Is the CCPAK1212i package compatible with standard SMT reflow profiles?
Yes-Nexperia qualifies PSMN1R4-100CSF for lead-free reflow with peak temperature up to 260 °C (per JEDEC J-STD-020). Recommended stencil thickness is 0.1 mm, and the footprint matches Figure 19 in the datasheet. Thermal pad solder paste coverage must exceed 80% to ensure mechanical integrity and thermal performance.
Does PSMN1R4-100CSF require gate resistors for safe operation in hard-switching applications?
Yes-a 5 Ω external gate resistor is recommended (per Fig. 13 test conditions) to limit dV/dt and prevent parasitic turn-on. Lower values increase switching speed but risk oscillation due to gate-drain capacitance coupling; higher values reduce EMI but increase switching losses. Layout must minimize gate loop inductance (<2 nH) to maintain stability.
PSMN1R4-100CSFJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 400A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 7V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.35mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 248 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 17737 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.071kW (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CCPAK1212i
PSMN1R4-100CSFJ FAQ
1.How can I place an order for PSMN1R4-100CSFJ through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R4-100CSFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R4-100CSFJ reliable?
The price and inventory of PSMN1R4-100CSFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R4-100CSFJ is usually 5 days.
3.What payment methods are accepted for PSMN1R4-100CSFJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R4-100CSFJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R4-100CSFJ?
PSMN1R4-100CSFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R4-100CSFJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R4-100CSFJ?
For technical support, including PSMN1R4-100CSFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R4-100CSFJ requirements.
6.How does Aetrix verify that PSMN1R4-100CSFJ is sourced from the original manufacturer or authorized distributors?
All PSMN1R4-100CSFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R4-100CSFJ meets industry standards.
7.What is the process for return or replacement of PSMN1R4-100CSFJ?
All PSMN1R4-100CSFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R4-100CSFJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R4-100CSFJ part is unused and in its original packaging.
Return procedure for PSMN1R4-100CSFJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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