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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R2-80CSEJ

Name: PSMN1R2-80CSEJ
Brand: Nexperia USA Inc.
SKU: PSMN1R2-80CSEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R2-80CSEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMN1R2-80CSEJ.pdf

Description:: N-CHANNEL, 80 V, 1.18 MOHM, MOSF

Quantity:: RFQ Add To RFQ list

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Inventory:3,998

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Product details

Overview

PSMN1R2-80CSE from Nexperia is an N-channel enhancement-mode power MOSFET in a CCPAK1212i (SOT8005A) copper-clip package, rated for 80 V V_DS, 1.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 375 A continuous drain current at T_mb = 25 °C and features enhanced Safe Operating Area (SOA) for robust linear-mode operation in hot-swap and soft-start circuits.

For engineers reviewing the PSMN1R2-80CSE datasheet, PSMN1R2-80CSE pinout, PSMN1R2-80CSE application, or PSMN1R2-80CSE equivalent, this device is selected for high-current 48 V backplane load switching where low conduction loss, avalanche ruggedness (1300 mJ), and top-side cooling capability are critical design requirements.

Technical Context

This MOSFET employs an inverted CCPAK1212i package with mounting base connected to drain, enabling direct thermal coupling to heatsinks on the PCB top side. Its SOA is fully optimized for extended linear-mode operation-critical during controlled turn-on of high-capacitance loads in hot-swap controllers.

The device exhibits low gate charge (Q_G(tot) = 233 nC typ) and fast switching (t_r = 57 ns, t_f = 70 ns), while maintaining high avalanche energy rating (E_AS = 1300 mJ) and low thermal resistance from junction to mounting base (R_th(j-mb) = 0.12 K/W typ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum drain-source blocking voltage; supports 48 V telecom backplane systems with margin for transients.
R_DS(on)	1.3 mΩ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 300 A, minimizing thermal stress in high-current load switches.
I_D (cont)	375 A @ T_mb = 25 °C - Validated continuous current capability; limited in practice by PCB layout and thermal management.
P_tot	935 W @ T_mb = 25 °C - High power dissipation enabled by copper-clip construction and low R_th(j-mb).
Q_G(tot)	233 nC - Gate drive energy requirement determines driver sizing and switching loss in high-frequency applications.
E_AS	1300 mJ - Non-repetitive avalanche energy rating ensures survivability during unclamped inductive turn-off events.
R_th(j-mb)	0.12 K/W - Enables efficient heat transfer to external heatsink via top-side mounting base, critical for compact 48 V power systems.

Pinout & Package

CCPAK1212i (SOT8005A) is a 12-terminal surface-mount copper-clip package measuring 12 mm × 12 mm × 2.5 mm, with exposed drain-connected mounting base for top-side cooling. The inverted structure places source and gate terminals on the bottom side and drain on the top thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1–5	Source	Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching.
6	Gate	Single gate input with low RG (1.12 Ω typ); optimized for standard 10 V gate drivers used in hot-swap controllers.
7–12	Drain	Six drain terminals connect to internal die drain metallization; minimize drain loop inductance in high-current paths.
mb	Mounting Base	Exposed copper pad electrically and thermally connected to drain; serves as primary thermal interface for heatsink attachment.

Key Features

Feature	Design Value
Enhanced SOA for linear mode	Validated safe operation across full V_DS-I_D range up to 175 °C; enables reliable soft-start control without thermal runaway.
Low R_DS(on) with temperature stability	R_DS(on) increases only 2.4× from 25 °C to 175 °C (2.4 mΩ max), ensuring predictable conduction loss over full operating range.
Inverted top-cool package	Mounting base on top surface allows direct heatsink contact-eliminates need for thermal vias or secondary board-side cooling solutions.
JEDEC-qualified open-market package	SOT8005A footprint ensures second-source compatibility and standardized reflow soldering per IPC-J-STD-020.
Avalanche-rated structure	100% tested for E_AS = 1300 mJ; guarantees robustness against unclamped inductive switching faults in e-fuse and load-switch applications.

Applications

Hot Swap Controller Interface

48 V Telecom Load Switch

Use Scenario: Controlled insertion of line cards into live 48 V backplane systems with up to 10,000 µF bulk capacitance.

IC Role / Device Role / Timing Role: Main power FET in discrete or controller-assisted hot-swap circuit; operates in linear mode during ramp-up, then saturated during steady state.

Use Value: Enhanced SOA prevents thermal failure during 50–200 ms soft-start phase; 1.3 mΩ R_DS(on) limits steady-state loss to <0.12 W at 100 A.

Use Scenario: High-current power path enable/disable in base station power distribution units (PDUs) and server midplanes.

IC Role / Device Role / Timing Role: Primary load switch FET; handles >300 A continuous current with minimal voltage drop and thermal rise.

Use Value: 375 A rating and 0.12 K/W R_th(j-mb) allow direct heatsink mounting to sustain full load at 100 °C ambient without derating.

Soft-Start Power Sequencing

E-Fuse Protection Circuit

Use Scenario: Gradual ramp-up of supply to FPGA, ASIC, or memory modules to limit inrush current and avoid rail collapse.

IC Role / Device Role / Timing Role: Linear-mode pass element controlled by external op-amp or dedicated sequencer IC to regulate dV/dt.

Use Value: SOA curve validated to 175 °C ensures stable operation during multi-hundred-millisecond ramp periods without thermal shutdown.

Use Scenario: Overcurrent protection for 48 V intermediate bus in datacom equipment, responding to faults within <100 µs.

IC Role / Device Role / Timing Role: Current-sensing power switch; combines low R_DS(on) for sensing accuracy and high avalanche energy for fault withstand.

Use Value: 1300 mJ E_AS and 2236 A peak current rating allow safe interruption of short-circuit events before upstream breakers trip.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-SOA N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N	80 V, 2.6 mΩ R_DS(on), TO-220FP package, R_th(j-mb) = 0.55 K/W	Lacks top-side cooling; requires through-hole mounting and board-side heatsinking	Select when legacy through-hole assembly is required and thermal budget allows higher R_th.
Vishay SiR626DP	80 V, 1.4 mΩ R_DS(on), PowerPAK® 1212-8 package, R_th(j-mb) = 0.25 K/W, no mounting base	No integrated thermal pad; relies on PCB copper for heat extraction	Select when space-constrained layouts prohibit top-side heatsinks but require sub-1.5 mΩ performance.

Compared with PSMN1R2-80CSE, IPP026N08N trades lower cost for significantly higher thermal resistance and no SOA optimization, while SiR626DP offers similar R_DS(on) but lacks the drain-connected mounting base essential for high-power top-cooled designs.

Availability

PSMN1R2-80CSE is available at Aetrix Electronics and suitable for 48 V telecom load switching, hot-swap power sequencing, and e-fuse protection requiring stable component supply, JEDEC-standard packaging, and high-temperature reliability.

Supply support for PSMN1R2-80CSE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, analog, and MOSFET solutions, with manufacturing rooted in process innovation and automotive-grade quality systems.

This device belongs to Nexperia's Application Specific MOSFETs (ASFETs) portfolio, engineered specifically for hot-swap and soft-start systems demanding superior linear-mode SOA, low R_DS(on), and top-side thermal management.

FAQ

What is the maximum continuous drain current for PSMN1R2-80CSE under real-world PCB conditions?

The datasheet specifies 375 A at T_mb = 25 °C, but practical current is limited by PCB copper area, thermal vias, and heatsink interface. With a 25.4 mm² 70 µm copper pad and low-thermal-resistance interface, sustained currents above 250 A are achievable at T_mb ≤ 85 °C. Derating curves in Figure 2 must be applied based on measured mounting base temperature.

Can PSMN1R2-80CSE be used in avalanche mode for clamping applications?

Yes-it is 100% tested for non-repetitive avalanche energy (E_AS = 1300 mJ) under defined conditions (I_AS = 109 A, V_sup ≤ 80 V, T_j(init) = 25 °C). However, repetitive avalanche is not characterized or guaranteed; use only for infrequent fault events with adequate thermal recovery time between occurrences.

Is the CCPAK1212i package compatible with standard reflow profiles?

Yes-CCPAK1212i (SOT8005A) is JEDEC-qualified and supports standard lead-free reflow per IPC-J-STD-020. Recommended stencil thickness is 0.1 mm, and footprint dimensions are provided in Figure 19. Peak temperature must not exceed 260 °C for ≤ 30 seconds, consistent with industry Class 3 assembly requirements.

How does the inverted package affect PCB layout and thermal design?

The inverted structure places the drain-connected mounting base on the top surface, requiring a cutout or thermal relief in the top-layer copper to accommodate the heatsink. Source and gate pads remain on the bottom side, enabling compact routing. Thermal design must prioritize low-impedance mechanical and thermal interface between the mb pad and heatsink-not PCB vias-since >95% of heat exits through the top surface.

PSMN1R2-80CSEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 375A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.18mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 350 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 26187 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 935W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212i

PSMN1R2-80CSEJ FAQ

1.How can I place an order for PSMN1R2-80CSEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R2-80CSEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R2-80CSEJ reliable?

The price and inventory of PSMN1R2-80CSEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R2-80CSEJ is usually 5 days.

3.What payment methods are accepted for PSMN1R2-80CSEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R2-80CSEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R2-80CSEJ?

PSMN1R2-80CSEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R2-80CSEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R2-80CSEJ?

For technical support, including PSMN1R2-80CSEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R2-80CSEJ requirements.

6.How does Aetrix verify that PSMN1R2-80CSEJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R2-80CSEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R2-80CSEJ meets industry standards.

7.What is the process for return or replacement of PSMN1R2-80CSEJ?

All PSMN1R2-80CSEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R2-80CSEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R2-80CSEJ part is unused and in its original packaging.

Return procedure for PSMN1R2-80CSEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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