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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGLT65R025D2AUMA1

Name: IGLT65R025D2AUMA1
Brand: Infineon Technologies
SKU: IGLT65R025D2AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGLT65R025D2AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 16-PowerSOP Module

Datasheet:: IGLT65R025D2AUMA1.pdf

Description:: IGLT65R025D2AUMA1

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Product details

Overview

IGLT65R025D2AUMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-HDSOP-16 package, featuring 25 mΩ typical R_DS(on), 11 nC gate charge, and Kelvin source configuration for high-frequency hard/soft-switching topologies. It delivers ultra-fast switching with zero reverse-recovery charge and supports 120 A pulsed drain current in industrial SMPS, totem-pole PFC, and high-density LLC resonant converters.

For engineers reviewing the IGLT65R025D2AUMA1 datasheet, IGLT65R025D2AUMA1 pinout, IGLT65R025D2AUMA1 application, or IGLT65R025D2AUMA1 equivalent, key selection criteria include its 650 V V_DS,max, 0.57 °C/W R_thJC, Kelvin-source layout for gate drive stability, and qualification per JEDEC standards for industrial reliability.

Technical Context

This CoolGaN™ G5 device uses lateral GaN-on-Si technology with integrated Kelvin source terminal (Pin 10) to decouple power and signal return paths, eliminating gate loop inductance effects during high di/dt switching. Its 900 V transient voltage rating enables robust operation under 750 V surge conditions in DC-link applications.

The transistor exhibits no body diode reverse recovery (Q_rr = 0 nC), enabling bidirectional conduction without commutation losses. Its low C_oss (130 pF) and C_rss (1.8 pF) support >1 MHz operation while maintaining <200 V/ns dv/dt immunity and 2 kV HBM ESD protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - Rated blocking voltage for 400 V AC-input PFC and 700 V DC-bus systems
R_DS(on),typ	25 mΩ at 25°C - Enables <1.5 W conduction loss at 18 A continuous current
Q_G	11 nC - Reduces gate driver power requirement and switching transition time
I_D,pulse	120 A - Supports high peak-current operation in LLC and totem-pole PFC stages
R_thJC	0.57 °C/W - Allows 219 W power dissipation with ≤100°C junction-to-case temperature rise
dv/dt immunity	200 V/ns - Ensures reliable operation under fast voltage transients in high-frequency converters
Q_rr	0 nC - Eliminates reverse-recovery losses and associated EMI in synchronous rectification

Pinout & Package

PG-HDSOP-16 package with exposed heatslug (Pins 11–16) and integrated Kelvin source (Pin 10); thermally optimized for surface-mount PCB mounting with vertical airflow-free cooling.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–8	Drain	Main high-side power path; electrically tied to heatslug for low-inductance thermal/power return
Pin 9	Gate	Control input; requires low-impedance gate driver due to 0.7 Ω internal gate resistance
Pins 11–16	Source / Heatslug	Power return and thermal interface; soldered directly to PCB copper for thermal management
Pin 10	Kelvin Source	Separate low-current sense path for gate drive reference-eliminates source inductance impact on switching timing

Key Features

Feature	Design Value
Enhancement-mode GaN	Normally-off operation ensures safe startup and fault tolerance without external bias circuitry
Kelvin source configuration	Decouples gate drive return from high-di/dt power loop-enables stable 10+ MHz switching
No reverse-recovery charge	Zero Q_rr eliminates shoot-through risk and EMI in synchronous rectification and bridge legs
JEDEC-qualified reliability	Validated per JEP198 stress protocols for 150°C continuous operation and 2 kV HBM ESD robustness
Low C_rss/C_iss ratio	1.8 pF/780 pF ratio minimizes Miller effect-reduces gate drive energy and improves noise immunity

Applications

Industrial SMPS

Totem-Pole PFC

Use Scenario: High-efficiency 3–10 kW server power supplies operating at 700 V DC bus with forced-air cooling.

IC Role / Device Role / Timing Role: High-side switch in interleaved half-bridge topology; switching at 200–500 kHz with precise dead-time control.

Use Value: 25 mΩ R_DS(on) and 11 nC Q_G reduce total losses by >18% vs. Si MOSFET equivalents at full load.

Use Scenario: Single-stage 3.3 kW telecom rectifier with active front-end using dual-phase totem-pole architecture.

IC Role / Device Role / Timing Role: Fast-switching leg in bidirectional AC/DC conversion; conducts reverse current during AC zero-crossings.

Use Value: Zero Q_rr and 2.4 V V_SD enable >99.1% efficiency at 50% load without snubbers or complex gate timing.

High-Frequency LLC

EV Onboard Charger

Use Scenario: 6.6 kW resonant converter in datacenter rack PSUs, operating at 700 kHz with GaN-optimized magnetics.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge LLC; handles 120 A pulsed current during resonance peaks.

Use Value: 0.57 °C/W R_thJC and 200 V/ns dv/dt rating sustain stable operation under 105°C ambient with no derating.

Use Scenario: Bidirectional 11 kW OBC in BEV platforms, supporting both AC charging and vehicle-to-grid (V2G) export.

IC Role / Device Role / Timing Role: Dual-role switch in dual-active-bridge topology-conducts forward and reverse current with identical R_DS(on).

Use Value: Symmetrical conduction characteristics and Kelvin source ensure <±0.5% current imbalance across phases at 100 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V, 50 mΩ SiC MOSFET in TO-247; higher Q_G (34 nC), no Kelvin source	Limited to ≤300 kHz due to slower switching and higher gate drive loss	Select when legacy SiC gate drivers and thermal infrastructure are already deployed
GS66508T	650 V, 22 mΩ GaN FET in PQFN; 10 nC Q_G, but no integrated Kelvin source or heatslug	Requires external Kelvin routing and additional thermal vias for >100 A operation	Select when board space is constrained and discrete Kelvin trace layout is feasible

Compared with TPH3205WS and GS66508T, IGLT65R025D2AUMA1 uniquely integrates Kelvin source and heatslug in PG-HDSOP-16, delivering lowest system-level EMI, highest thermal efficiency, and simplest gate drive design for >400 kHz industrial converters.

Availability

IGLT65R025D2AUMA1 is available at Aetrix Electronics and suitable for industrial SMPS, totem-pole PFC, and high-frequency LLC converters requiring stable component supply, long-term lifecycle assurance, and qualified GaN performance at 650 V.

Supply support for IGLT65R025D2AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the CoolGaN™ G5 product line-designed specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in datacenter, telecom, and EV infrastructure where switching frequency, thermal density, and reliability are critical.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The absolute maximum continuous V_GS is –10 V to +10 V at temperatures from –55°C to +150°C. Operation beyond ±10 V risks permanent gate oxide degradation. The gate threshold voltage is 0.9–1.6 V, and gate clamping at –8 V prevents negative overvoltage during turn-off transients.

How does the Kelvin source (Pin 10) connect in a practical gate driver layout?

Pin 10 must be routed separately from the main source (Pins 11–16) to the gate driver's source reference node-never tied to power ground or heatslug. This low-current path carries only gate return current (<100 mA), minimizing voltage offset during high di/dt events and ensuring accurate gate voltage control.

Can IGLT65R025D2AUMA1 replace silicon MOSFETs in existing 650 V designs without layout changes?

No-direct replacement requires PCB redesign: the PG-HDSOP-16 footprint differs from TO-247 or D²PAK; Kelvin source routing must be added; and gate driver impedance must be lowered to accommodate 0.7 Ω internal R_G,int. Thermal pad area and via count must also meet 0.57 °C/W R_thJC requirements.

Is this device suitable for hard-switched flyback converters above 100 kHz?

Yes-its 200 V/ns dv/dt immunity, zero Q_rr, and 11 nC Q_G support reliable operation up to 500 kHz in discontinuous conduction mode (DCM) flyback. However, layout must minimize parasitic inductance in drain and Kelvin source paths to avoid oscillation during turn-off.

IGLT65R025D2AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 16-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 6.1mA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 3 V

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 780 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 219W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-16-8

IGLT65R025D2AUMA1 FAQ

1.How can I place an order for IGLT65R025D2AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGLT65R025D2AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGLT65R025D2AUMA1 reliable?

The price and inventory of IGLT65R025D2AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLT65R025D2AUMA1 is usually 5 days.

3.What payment methods are accepted for IGLT65R025D2AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLT65R025D2AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGLT65R025D2AUMA1?

IGLT65R025D2AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGLT65R025D2AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGLT65R025D2AUMA1?

For technical support, including IGLT65R025D2AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLT65R025D2AUMA1 requirements.

6.How does Aetrix verify that IGLT65R025D2AUMA1 is sourced from the original manufacturer or authorized distributors?

All IGLT65R025D2AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLT65R025D2AUMA1 meets industry standards.

7.What is the process for return or replacement of IGLT65R025D2AUMA1?

All IGLT65R025D2AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLT65R025D2AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGLT65R025D2AUMA1 part is unused and in its original packaging.

Return procedure for IGLT65R025D2AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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