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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT040HU120G3AG

Name: SCT040HU120G3AG
Brand: STMicroelectronics
SKU: SCT040HU120G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT040HU120G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT040HU120G3AG.pdf

Description:: AUTOMOTIVE-GRADE SILICON CARBIDE

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Product details

Overview

SCT040HU120G3AG from STMicroelectronics is an AEC-Q101-qualified silicon carbide (SiC) N-channel Power MOSFET designed for high-voltage, high-efficiency traction and on-board power conversion. It delivers 1200 V V_DS, 40 mΩ typical R_DS(on) at 18 V V_GS and 16 A, 40 A continuous drain current (T_C = 25 °C), and features a robust intrinsic body diode with 14.7 ns t_rr. It is deployed in EV/HEV main inverters and DC/DC converters where thermal stability and fast switching are critical.

For engineers reviewing the SCT040HU120G3AG datasheet, SCT040HU120G3AG pinout, SCT040HU120G3AG application, or SCT040HU120G3AG equivalent, key selection criteria include its 1200 V blocking capability, low R_DS(on) temperature coefficient, 54 nC total gate charge, HU3PAK package thermal resistance (R_thJC = 0.50 °C/W), and AEC-Q101 qualification for automotive traction systems.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate SiC technology to achieve stable R_DS(on) across -55 °C to 175 °C junction temperatures and low output capacitance (C_oss = 78 pF at 800 V). Its gate threshold voltage (1.8–4.2 V) and negative V_GS rating (-10 to 22 V) support robust gate drive design in high-noise traction environments.

The device integrates source sensing (Kelvin source) via Pin 2 to eliminate source inductance impact on switching control, enabling precise gate voltage regulation during high-di/dt operation. Its intrinsic SiC body diode supports bidirectional conduction with 2.6 V forward drop at 16 A and <100 nC Q_rr, reducing need for external anti-parallel diodes in bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables use in 800 V battery systems with >50 % voltage margin for transient overvoltage protection.
R_DS(on) typ.	40 mΩ at V_GS = 18 V, I_D = 16 A, T_J = 25 °C - Delivers <0.64 W conduction loss at 40 A, supporting high-efficiency 100+ kW inverters.
I_D cont.	40 A at T_C = 25 °C and T_C = 100 °C - Sustains full rated current without derating up to 100 °C case temperature due to flat R_DS(on) vs. T_J curve.
Q_g	54 nC - Enables fast turn-on/off with moderate gate driver power (e.g., 1.5 W avg. at 100 kHz, 18 V swing).
t_rr	14.7 ns - Minimizes reverse recovery losses in hard-switched totem-pole PFC and inverter leg commutation.
R_thJC	0.50 °C/W - Allows 300 W dissipation with only 150 °C ΔT from junction to case, supporting compact heatsink integration.
V_GS(th)	1.8–4.2 V - Ensures reliable turn-on with standard 15 V gate drivers while avoiding spurious conduction from noise.

Pinout & Package

The SCT040HU120G3AG is housed in the thermally optimized HU3PAK surface-mount package (14.0 × 11.8 × 3.5 mm), featuring a large copper drain tab for low-inductance, high-current PCB mounting and integrated Kelvin source sensing.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	High-current drain connection	Exposed copper pad soldered directly to PCB power plane; primary heat path and current return path.
1 (Gate)	Control input	Standard gate terminal; driven by isolated gate driver with recommended -5 V to +18 V swing.
2 (Driver Source)	Kelvin source sense	Provides dedicated low-inductance return for gate driver loop, decoupling gate control from power source noise.
3–7 (Power Source)	Main source current path	Five parallel pins carrying full 40 A source current; minimize resistive loss and inductance in high-frequency switching.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain applications including EV traction inverters and OBCs per stress test requirements.
Very low R_DS(on) over full temperature range	R_DS(on) increases only ~1.8× from 25 °C to 175 °C (vs. >3× for Si MOSFETs), enabling stable efficiency across operating conditions.
Source sensing pin (Kelvin source)	Enables accurate gate-source voltage regulation under high di/dt, reducing switching loss variation and improving EMI performance.
Fast and robust intrinsic SiC body diode	Q_rr = 94.2 nC and I_RRM = 10.6 A support ZVS/ZCS soft-switching and reduce snubber losses in bidirectional topologies.
Low C_iss/C_oss/C_rss	1329 pF / 78 pF / 10 pF at 800 V - Reduces capacitive turn-on loss and improves dv/dt immunity in high-frequency (>50 kHz) designs.

Applications

EV Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power motor drive stage in 400 V/800 V BEV platforms, operating at 10–20 kHz switching frequency with peak phase currents >300 A.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter leg; handles bidirectional current flow during regeneration using intrinsic body diode.

Use Value: 40 mΩ R_DS(on) and 0.50 °C/W R_thJC enable >99 % inverter efficiency at 150 kW, reducing cooling system size and weight.

Use Scenario: Primary-side switch in dual-active-bridge (DAB) isolated DC/DC converter for 11 kW OBC, operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-side and low-side switch in resonant half-bridge; requires fast, low-loss switching and low Q_rr for ZVS operation.

Use Value: 14.7 ns t_rr and 94.2 nC Q_rr ensure reliable zero-voltage switching across full load range, minimizing dead-time losses.

DC/DC Converter for HEV

Industrial Motor Drive

Use Scenario: 3–6 kW bidirectional DC/DC stage between 48 V mild-hybrid battery and 400 V main bus in PHEVs.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in interleaved buck-boost topology; conducts both directions with body diode and channel.

Use Value: AEC-Q101 qualification and stable R_DS(on) over -40 °C to 150 °C ambient ensure reliability in under-hood environments with minimal derating.

Use Scenario: High-voltage servo drive for industrial automation, requiring 1200 V isolation and 20 kHz PWM with low EMI.

IC Role / Device Role / Timing Role: Final output stage switch in three-phase IGBT/SiC hybrid inverter; used where SiC enables higher frequency than IGBTs.

Use Value: 54 nC Q_g and 12.9 ns t_d(on) allow clean 20 kHz switching with <10 ns jitter, reducing acoustic noise and filter component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0040120K	Same 1200 V/40 mΩ rating but TO-247-4L package; higher R_thJC (0.75 °C/W); no Kelvin source pin.	Lacks integrated source sensing; requires external Kelvin layout for precision gate control in high-di/dt apps.	Preferred for legacy TO-247 board reuse; less optimal for new high-density traction designs needing lowest gate loop inductance.
ROHM SCT3040KL	1200 V/39 mΩ in TO-263-7L; R_thJC = 0.55 °C/W; Q_g = 58 nC; t_rr = 17 ns.	Slightly higher switching energy (E_on + E_off ≈ 395 µJ vs. 384 µJ) and slower diode recovery limit ZVS margin at >150 kHz.	Better fit for cost-sensitive industrial SMPS; less suitable for automotive traction where AEC-Q101 and sub-15 ns t_rr are mandatory.

Compared with C3M0040120K and SCT3040KL, SCT040HU120G3AG offers superior thermal performance (0.50 °C/W), integrated Kelvin source for gate control fidelity, and the fastest body diode (14.7 ns t_rr), making it the preferred choice for space-constrained, high-reliability EV traction inverters.

Availability

SCT040HU120G3AG is available at Aetrix Electronics and suitable for EV traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, AEC-Q101 compliance, and high-temperature operational integrity.

Supply support for SCT040HU120G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing capabilities.

This device belongs to ST's STPOWER SiC portfolio, engineered specifically for next-generation electric vehicle powertrain systems demanding ultra-high efficiency, compact size, and automotive-grade reliability at 1200 V.

FAQ

What gate drive voltage is recommended for reliable operation?

The datasheet specifies a recommended operating V_GS range of -5 V to +18 V. A -5 V turn-off bias ensures robust noise immunity against parasitic turn-on, while +18 V maximizes R_DS(on) reduction and minimizes conduction loss. Gate drive must limit dV/dt to avoid exceeding the transient V_GS rating of -11 V to +25 V.

How does the Kelvin source pin (Pin 2) interface with gate drivers?

Pin 2 (Driver Source) connects exclusively to the gate driver's source return node-separate from the main power source pins (3–7). This creates a dedicated low-inductance feedback path for the gate driver's high-side reference, eliminating voltage drop errors caused by source bond wire inductance during high di/dt switching events.

Is the intrinsic body diode suitable for continuous bidirectional conduction?

Yes-the SiC body diode is rated for 40 A continuous forward current at T_C = 25 °C and 100 °C, with V_SD = 2.6 V at 16 A. Its 14.7 ns t_rr and low Q_rr (94.2 nC) make it fully usable in synchronous rectification and regenerative braking without external diodes in most traction topologies.

What thermal derating applies above 100 °C case temperature?

No derating is required up to T_C = 100 °C-the device sustains 40 A continuous current per Table 1. Above 100 °C, current must be reduced per Figure 13: at T_C = 125 °C, max I_D = 32 A; at T_C = 150 °C, max I_D = 24 A. Junction temperature must remain ≤175 °C, enforced by R_thJC = 0.50 °C/W and heatsink design.

SCT040HU120G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT040HU120G3AG FAQ

1.How can I place an order for SCT040HU120G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT040HU120G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT040HU120G3AG reliable?

The price and inventory of SCT040HU120G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT040HU120G3AG is usually 5 days.

3.What payment methods are accepted for SCT040HU120G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT040HU120G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT040HU120G3AG?

SCT040HU120G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT040HU120G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT040HU120G3AG?

For technical support, including SCT040HU120G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT040HU120G3AG requirements.

6.How does Aetrix verify that SCT040HU120G3AG is sourced from the original manufacturer or authorized distributors?

All SCT040HU120G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT040HU120G3AG meets industry standards.

7.What is the process for return or replacement of SCT040HU120G3AG?

All SCT040HU120G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT040HU120G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT040HU120G3AG part is unused and in its original packaging.

Return procedure for SCT040HU120G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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