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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT040H120G3AG

Name: SCT040H120G3AG
Brand: STMicroelectronics
SKU: SCT040H120G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT040H120G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: SCT040H120G3AG.pdf

Description:: H2PAK-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SCT040H120G3AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide (SiC) N-channel Power MOSFET in H²PAK-7 package, rated for 1200 V drain-source voltage, 40 mΩ typical R_DS(on) at 18 V_GS, and 40 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency switching element in high-voltage traction inverters and on-board chargers for electric vehicles.

For engineers reviewing the SCT040H120G3AG datasheet, SCT040H120G3AG pinout, SCT040H120G3AG application, or SCT040H120G3AG equivalent, key selection criteria include its low R_DS(on) over temperature (72 mΩ at 175 °C), fast switching energy (267 µJ E_on, 117 µJ E_off), robust intrinsic body diode (t_rr = 14.7 ns), and source-sensing configuration for gate drive optimization.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate SiC technology, delivering stable threshold voltage (V_GS(th) = 1.8–4.2 V) and normalized R_DS(on) variation <2.5× across –75 °C to 175 °C. Its low C_iss (1329 pF) and C_rss (10 pF) enable high-frequency operation with minimal Miller effect.

The device integrates a dedicated driver source pin (Pin 2) separate from power source pins (Pins 3–7), enabling Kelvin-source gate control to eliminate source inductance impact on switching dynamics and improve efficiency in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Supports 800 V DC-link systems with 50 % voltage margin for transient overvoltage in EV traction applications.
R_DS(on) typ.	40 mΩ at V_GS = 18 V, I_D = 16 A - Enables low conduction loss in 40 A continuous operation at T_C = 25 °C.
I_D cont.	40 A at T_C = 25 °C - Package-limited current rating suitable for high-power motor drive half-bridges.
E_on/E_off	267 µJ / 117 µJ at V_DD = 800 V, I_D = 16 A, R_G = 15 Ω - Enables >50 kHz switching in DC/DC converters without excessive thermal penalty.
t_rr	14.7 ns at I_SD = 16 A, di/dt = 1000 A/µs - Reduces reverse recovery loss and enables synchronous rectification in bidirectional OBC stages.
R_thJC	0.50 °C/W - Allows 300 W total power dissipation at T_C = 25 °C, supporting compact heatsink designs in space-constrained EV modules.

Pinout & Package

H²PAK-7 package: thermally enhanced surface-mount power package with isolated tab (Drain), 7-terminal layout optimized for low-inductance high-current routing and Kelvin-source sensing.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	High-side power output node	Exposed copper drain pad for direct thermal interface to heatsink; carries full load current and must be electrically isolated from PCB ground plane.
1 (Gate)	Control input	Standard gate terminal; driven with ±5 V to +18 V logic; requires low-impedance path to minimize ringing during dV/dt transitions.
2 (Driver Source)	Kelvin source reference	Provides dedicated return path for gate driver IC feedback loop, eliminating source inductance impact on switching speed and stability.
3–7 (Power Source)	Main current return path	Parallel-connected source terminals carrying bulk 40 A conduction current; routed separately from Pin 2 to preserve Kelvin sensing integrity.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling per stress test requirements for EV powertrain use.
Source sensing pin (Pin 2)	Enables true Kelvin-source gate drive, reducing effective gate resistance impact and improving turn-on consistency under high di/dt conditions.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~2.5× from –75 °C to 175 °C - supports stable current sharing in paralleled configurations across wide ambient ranges.
Fast intrinsic body diode	t_rr = 14.7 ns and Q_rr = 94.2 nC - eliminates need for external anti-parallel SiC Schottky diodes in bridge-leg freewheeling paths.

Applications

Electric Traction Inverter

On-Board Charger (OBC)

Use Scenario: High-power 3-phase inverter stage converting battery DC to variable-frequency AC for permanent magnet traction motors in BEVs.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6-pack half-bridge configuration operating at 8–16 kHz PWM frequency.

Use Value: Low R_DS(on) and fast switching reduce conduction + switching losses by >25 % vs. comparable Si IGBTs, enabling smaller heatsinks and higher power density.

Use Scenario: Bidirectional AC/DC and DC/DC conversion stage in 11 kW OBC systems compliant with SAE J1772 and GB/T 18487.1.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge (PSFB) or dual-active-bridge (DAB) topology operating at 100–300 kHz.

Use Value: Low C_oss (78 pF) and fast t_rr allow zero-voltage switching (ZVS) over full load range, improving peak efficiency to >96 %.

DC/DC Converter (EV)

Industrial HV UPS

Use Scenario: Isolated 800 V-to-400 V bi-directional DC/DC converter linking main traction battery and 48 V auxiliary system in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: High-frequency switching transistor in resonant LLC or DAB topology with soft-switching operation above 200 kHz.

Use Value: 1200 V rating provides sufficient margin for 900 V transients in 800 V systems, while 40 mΩ R_DS(on) minimizes conduction loss at 100+ A peak currents.

Use Scenario: High-reliability 1000 V DC bus switching in three-phase industrial uninterruptible power supplies for data centers and factory automation.

IC Role / Device Role / Timing Role: Static switch in maintenance bypass or solid-state transfer switch requiring fail-safe blocking and fast fault isolation.

Use Value: V(BR)_DSS = 1200 V with <±2 % drift over temperature ensures consistent overvoltage protection margin across –40 °C to +85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0040120K (Wolfspeed)	Same 1200 V/40 mΩ rating but H3PAK-7 package; R_thJC = 0.45 °C/W; no dedicated driver source pin.	Lacks Kelvin-source sensing - requires external gate resistor tuning to compensate for source inductance in high-di/dt layouts.	Select when board layout prioritizes thermal performance over gate drive precision; verify gate drive loop inductance ≤ 2 nH.
IXFH40N120X2 (IXYS)	1200 V/42 mΩ SiC MOSFET in TO-247-4L; R_thJC = 0.65 °C/W; Q_g = 62 nC (vs. 54 nC).	Higher gate charge increases driver power requirement; TO-247-4L lacks integrated Kelvin source, limiting high-frequency ZVS capability.	Prefer for legacy TO-247 footprint compatibility; avoid in >150 kHz DAB designs where E_off sensitivity is critical.

Compared with C3M0040120K and IXFH40N120X2, SCT040H120G3AG offers superior gate drive fidelity via dedicated driver source pin, lower thermal resistance (0.50 °C/W), and tighter R_DS(on) tolerance (±15 % vs. ±20 %), making it optimal for high-density, high-efficiency EV power modules demanding precise timing control.

Availability

SCT040H120G3AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, AEC-Q101 compliance, and production-ready SiC MOSFETs with traceable lot history.

Supply support for SCT040H120G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing capabilities and broad IP portfolio.

This device belongs to ST's STPOWER SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability EV power conversion systems requiring 750–1200 V blocking capability and operation up to 200 °C junction temperature.

FAQ

What is the maximum recommended gate drive voltage for SCT040H120G3AG?

The absolute maximum gate-source voltage is –11 V to +25 V for transients <1 µs, but the recommended operating range is –5 V to +18 V. Driving above +18 V does not reduce R_DS(on) meaningfully and accelerates gate oxide degradation; sustained operation at +22 V violates long-term reliability specifications per DS14094 Rev 2.

Does SCT040H120G3AG require an external freewheeling diode?

No. The device features a robust intrinsic body diode characterized with t_rr = 14.7 ns and Q_rr = 94.2 nC at 16 A, enabling reliable unidirectional and bidirectional conduction in bridge-leg configurations without external diodes-confirmed in Figure 16 and Table 7 of DS14094.

How is the H²PAK-7 package mounted for optimal thermal performance?

Mount the exposed drain TAB directly to a flat, nickel-plated copper heatsink using thermal interface material (TIM) with ≤0.15 °C·in²/W resistance. Apply uniform clamping force of 25–35 N per mounting screw; avoid warping the package body. PCB land pattern must match Figure 19 footprint with ≥10 mm² copper pour per layer under TAB.

Can SCT040H120G3AG be paralleled with identical units?

Yes-its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive loops (≤0.5 nH inductance difference), identical source trace lengths, and thermal coupling via shared heatsink to maintain ΔT_J < 5 °C between devices.

SCT040H120G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 16A, 18V

Vgs(th) (Max) @ Id:: 4.2V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 18 V

Vgs (Max):: +18V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 1329 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: H2PAK-7

SCT040H120G3AG FAQ

1.How can I place an order for SCT040H120G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT040H120G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT040H120G3AG reliable?

The price and inventory of SCT040H120G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT040H120G3AG is usually 5 days.

3.What payment methods are accepted for SCT040H120G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT040H120G3AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT040H120G3AG?

SCT040H120G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT040H120G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT040H120G3AG?

For technical support, including SCT040H120G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT040H120G3AG requirements.

6.How does Aetrix verify that SCT040H120G3AG is sourced from the original manufacturer or authorized distributors?

All SCT040H120G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT040H120G3AG meets industry standards.

7.What is the process for return or replacement of SCT040H120G3AG?

All SCT040H120G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT040H120G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT040H120G3AG part is unused and in its original packaging.

Return procedure for SCT040H120G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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