My Inquiry
My Account
Infineon Technologies IMZA65R026M2HXKSA1
- Part No.:
- IMZA65R026M2HXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-4
- Datasheet:
-
IMZA65R026M2HXKSA1.pdf
- Description:
- IMZA65R026M2HXKSA1
- Quantity:
- Payment:
- Shipping:
Inventory:2,166
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IMZA65R026M2HXKSA1 from Infineon is a 650 V, 26 mΩ SiC MOSFET in PG-TO247-4 package, designed as a high-efficiency power switch for hard-switched and resonant topologies. It features 4.5 V gate threshold voltage, 42 nC total gate charge, 80 nC output charge at 400 V, and 10.8 μJ turn-off switching loss - enabling high-frequency operation in solar inverters and EV charging systems.
For engineers reviewing the IMZA65R026M2HXKSA1 datasheet, IMZA65R026M2HXKSA1 pinout, IMZA65R026M2HXKSA1 application, or IMZA65R026M2HXKSA1 equivalent, key selection criteria include its 26 mΩ RDS(on) at 18 VGS, robust body diode with 16 ns forward recovery time, 215 A pulsed drain current rating, and dedicated driver source pin to suppress common-source inductance effects.
Technical Context
This CoolSiC™ Gen 2 device uses trench-based silicon carbide technology with XT interconnection for low thermal resistance (0.66 °C/W). Its gate threshold of 4.5 V ensures immunity to parasitic turn-on even at 0 V turn-off, supporting bipolar gate driving schemes without external negative bias.
The 4-pin TO247 configuration separates power source (Pin 2) and driver source (Pin 3), decoupling gate loop inductance from high-current paths. This architecture reduces switching oscillation and enables stable operation up to 200 V/ns dv/dt stress, validated per JEDEC industrial reliability standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage in PV and UPS systems |
| RDS(on) | 26 mΩ @ VGS = 18 V, Tj = 25°C - enables <1.5 W conduction loss at 40 A continuous, reducing heatsink requirements |
| QG | 42 nC - determines gate drive power requirement; compatible with standard 2 A peak gate drivers at 100 kHz switching |
| Eoss | 10.8 μJ @ 400 V - defines energy stored in output capacitance, critical for ZVS design margin in LLC converters |
| ID,pulse | 215 A - supports short-circuit withstand capability in motor drives and grid-tied inverters during fault conditions |
| tr/tf | 10.1 ns / 5.1 ns - enables >500 kHz hard-switching with minimal dead-time penalty and reduced EMI filter size |
| Rth(j–c) | 0.66 °C/W - allows 227 W power dissipation at 25°C case temperature, supporting compact thermal design with copper baseplates |
Pinout & Package
Package: PG-TO247-4 (lead-free, RoHS-compliant, with isolated tab). The tab is electrically connected to the drain terminal and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main power drain connection and thermal interface | High-current return path; must be soldered to copper pour for thermal performance; electrically tied to Pin 1 |
| Pin 1 (Drain) | Secondary drain connection | Provides low-inductance parallel path for high-frequency current; used with tab for optimal layout |
| Pin 2 (Power Source) | Source terminal for power current path | Carries load current; connects to system ground/power return; not interchangeable with Pin 3 |
| Pin 3 (Driver Source) | Reference node for gate driver loop | Minimizes gate loop inductance by providing local source reference near gate driver IC; critical for noise immunity |
| Pin 4 (Gate) | Control input for MOSFET channel | Receives gate drive signal; requires low-impedance routing to Pin 3 to avoid ringing and false triggering |
Key Features
| Feature | Design Value |
|---|---|
| Separate driver source pin | Eliminates common-source inductance impact on gate control, enabling stable 200 V/ns dv/dt operation without gate oscillation |
| VGS(th) = 4.5 V (typ) | Prevents unintended turn-on during fast transients; allows safe zero-volt turn-off without negative gate bias circuitry |
| Robust body diode (tfr = 16 ns) | Supports hard commutation in bidirectional topologies like active rectifiers and three-phase PFC without external anti-parallel diodes |
| XT interconnection technology | Reduces junction-to-case thermal resistance to 0.66 °C/W, improving power density and lifetime in 175°C junction applications |
| JEDEC-qualified for industrial use | Validated for 15-year field life under 175°C continuous operation, meeting IPC-9592B gate voltage compliance |
Applications
| Solar PV Inverters | EV DC Fast Charging |
|---|---|
Use Scenario: Three-level NPC or T-type inverter stage converting 1000 V DC string voltage to 50/60 Hz AC grid output. IC Role / Device Role / Timing Role: High-side and low-side switching element in 100–200 kHz hard-switched or hybrid ZVS topology. Use Value: 26 mΩ RDS(on) and 10.8 μJ Eoss enable >99% peak efficiency while maintaining <85°C junction temperature at 30 kW per module. | Use Scenario: Secondary-side synchronous rectification in 1–3 kW isolated DC/DC stages feeding 400–1000 V battery packs. IC Role / Device Role / Timing Role: Unidirectional power switch in phase-shifted full-bridge or CLLC resonant converter. Use Value: 42 nC QG and 5.1 ns fall time allow precise timing control at 300–500 kHz, minimizing dead-time losses and improving dynamic response to load steps. |
| Industrial UPS Systems | High-Power Motor Drives |
Use Scenario: Online double-conversion UPS delivering clean 400 V AC output from rectified utility or generator input. IC Role / Device Role / Timing Role: Inverter bridge switch handling 10–100 kVA loads with strict THD and transient response requirements. Use Value: 215 A pulsed current rating and 200 V/ns dv/dt ruggedness ensure reliable operation during line sags, surges, and short-circuit events without desaturation protection. | Use Scenario: Field-oriented control (FOC) inverter for 75–250 kW permanent magnet motors in pumps, compressors, and traction systems. IC Role / Device Role / Timing Role: Main power switch in six-pack IGBT replacement configuration operating at 8–16 kHz PWM frequency. Use Value: 0.66 °C/W Rth(j–c) and 175°C max Tj support high overload capacity (150% for 60 s) without derating in air-cooled enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0026120K | 1200 V rating, 26 mΩ RDS(on), TO247-4 package, higher QG (52 nC), no separate driver source pin | Better suited for 800 V+ DC bus systems; lacks driver-source isolation, requiring careful gate loop layout | Select when higher voltage margin is required and gate drive layout can accommodate shared source inductance |
| IXFH40N65X2 | 650 V Si IGBT, 1.8 V VCE(sat), TO247 package, slower switching (tf ≈ 120 ns), no body diode rating | Lower cost, higher conduction loss, unsuitable for >20 kHz or hard-commutated topologies | Choose only for cost-sensitive, low-frequency (<10 kHz), non-resonant applications where efficiency is secondary |
Compared with C3M0026120K and IXFH40N65X2, IMZA65R026M2HXKSA1 delivers superior high-frequency efficiency via lower Eoss and dedicated driver source, while offering better thermal performance than the IGBT and more robust gate control than the 1200 V SiC alternative.
Availability
IMZA65R026M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply across multi-year production cycles.
Supply support for IMZA65R026M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.
This part belongs to the CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-power-density power conversion in renewable energy and e-mobility applications where thermal performance and switching robustness are critical.
FAQ
What is the maximum recommended gate drive voltage for IMZA65R026M2HXKSA1?
The absolute maximum gate-source voltage is 25 V for transient conditions (≤500 ns, ≤1% duty cycle), but Infineon specifies 18 V as the recommended turn-on voltage for reliable long-term operation. Operating above 20 V increases gate oxide stress and accelerates wear-out; 15–18 V provides optimal trade-off between RDS(on) reduction and gate reliability.
Can the power source (Pin 2) and driver source (Pin 3) pins be shorted together?
No - Infineon explicitly warns that exchanging or shorting Pin 2 (power source) and Pin 3 (driver source) may cause malfunction. The driver source pin provides a low-inductance local return for the gate driver, while the power source carries high di/dt load current. Shorting them reintroduces source inductance into the gate loop, risking oscillation and false turn-on during high dv/dt events.
Is IMZA65R026M2HXKSA1 suitable for linear (ohmic) mode operation?
No - the datasheet states "Linear mode operation is not recommended" and directs users to contact Infineon sales for assessment if such use is considered. The device is characterized and qualified only for switching operation; SOA limitations, thermal runaway risk, and lack of linear-mode SOA curves make it unsuitable for analog power regulation or electronic load applications.
Does this MOSFET require an external anti-parallel diode in bridge configurations?
No - the integrated body diode is fully rated for hard commutation with tfr = 16 ns (typ) and Qfr = 83 nC, validated per JEDEC industrial standards. It supports bidirectional current flow in totem-pole PFC and synchronous rectifier topologies without external diodes, provided layout minimizes source inductance and gate drive strength meets 2 A peak requirement.
IMZA65R026M2HXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V, 20V
- Rds On (Max) @ Id, Vgs:
- 24mOhm @ 34.5A, 20V
- Vgs(th) (Max) @ Id:
- 5.6V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 18 V
- Vgs (Max):
- +23V, -7V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1499 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 227W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4-8
IMZA65R026M2HXKSA1 FAQ
1.How can I place an order for IMZA65R026M2HXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IMZA65R026M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IMZA65R026M2HXKSA1 reliable?
The price and inventory of IMZA65R026M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R026M2HXKSA1 is usually 5 days.
3.What payment methods are accepted for IMZA65R026M2HXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R026M2HXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IMZA65R026M2HXKSA1?
IMZA65R026M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IMZA65R026M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IMZA65R026M2HXKSA1?
For technical support, including IMZA65R026M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R026M2HXKSA1 requirements.
6.How does Aetrix verify that IMZA65R026M2HXKSA1 is sourced from the original manufacturer or authorized distributors?
All IMZA65R026M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R026M2HXKSA1 meets industry standards.
7.What is the process for return or replacement of IMZA65R026M2HXKSA1?
All IMZA65R026M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R026M2HXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IMZA65R026M2HXKSA1 part is unused and in its original packaging.
Return procedure for IMZA65R026M2HXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IMZA65R026M2HXKSA1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
