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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT016H120G3AG

Name: SCT016H120G3AG
Brand: STMicroelectronics
SKU: SCT016H120G3AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT016H120G3AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT016H120G3AG.pdf

Description:: AUTOMOTIVE-GRADE SILICON CARBIDE

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Product details

Overview

SCT016H120G3AG from STMicroelectronics is an AEC-Q101-qualified silicon carbide power MOSFET with 1200 V V_DS, 16 mΩ typical R_DS(on) at 18 V V_GS and 60 A, 112 A continuous drain current at T_C = 25 °C, and H²PAK-7 package. It serves as a high-efficiency switching device in high-voltage traction inverters and on-board chargers for electric vehicles.

For engineers reviewing the SCT016H120G3AG datasheet, SCT016H120G3AG pinout, SCT016H120G3AG application, or SCT016H120G3AG equivalent, key selection criteria include its 1200 V blocking capability, low 16 mΩ R_DS(on) at 175 °C (30 mΩ), fast 24 ns t_rr body diode, and source-sensing configuration for gate drive accuracy in high-frequency EV power stages.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology to achieve stable R_DS(on) across -55 °C to 175 °C and low C_iss (3623 pF) and C_rss (22 pF) at 800 V, enabling hard-switching operation up to 100 kHz in traction inverters. Its intrinsic body diode delivers 24 ns reverse recovery time and 220 nC Q_rr under 1000 A/μs di/dt, eliminating need for external anti-parallel SiC diodes.

The H²PAK-7 package integrates separate driver-source (pin 2) and power-source (pins 3–7) terminals to minimize source inductance and suppress common-source voltage spikes during switching. Thermal resistance R_thJC is 0.23 °C/W, supporting 652 W total power dissipation at T_C = 25 °C with direct heatsink mounting via the exposed drain tab.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Enables use in 800 V battery systems with 50 % voltage margin for transient overvoltage protection
R_DS(on) typ.	16 mΩ at V_GS = 18 V, I_D = 60 A - Delivers <1.2 W conduction loss at 60 A, critical for >98 % inverter efficiency
I_D cont.	112 A at T_C = 25 °C - Supports high-power motor drives without parallel devices in compact OBC modules
t_rr	24 ns - Enables zero-voltage switching (ZVS) in phase-shifted full-bridge topologies with minimal turn-off loss
Q_g	150 nC - Matches gate drivers with 2–4 A peak output for controlled 46 ns t_d(on) and 126 ns t_d(off)
R_thJC	0.23 °C/W - Allows thermal design with ≤115 °C junction rise at 600 W dissipation, simplifying heatsink sizing
V_GS(th)	1.8–4.2 V - Ensures robust noise immunity with 18 V gate drive while avoiding spurious turn-on near 0 V

Pinout & Package

H²PAK-7 is a surface-mount, thermally enhanced package with an exposed copper drain tab (TAB) for direct heatsink attachment and seven signal terminals. The layout separates driver-source (pin 2) from power-source (pins 3–7) to eliminate source inductance-induced gate oscillation.

Pin/Terminal	Circuit Role	Design Meaning
TAB	Drain	Exposed copper pad - Primary thermal path to heatsink; must be soldered to copper pour ≥100 mm²
1	Gate	Main gate input - Connects to isolated gate driver with <1.3 Ω intrinsic R_g for precise edge control
2	Driver source	Reference for gate driver IC - Enables Kelvin sensing to reject source inductance voltage drop during switching
3–7	Power source	Parallel source return paths - Low-inductance connection to DC-link capacitor negative terminal for reduced EMI

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including 1000-hour HTGB and temperature cycling per JESD22-A104
Source sensing pin	Enables gate driver feedback loop to reject up to 500 mV source inductance spike, improving dV/dt immunity
Low R_DS(on) tempco	R_DS(on) increases only 2.5× from 25 °C to 175 °C - Maintains efficiency stability across full operating range
Robust intrinsic body diode	24 ns t_rr, 17 A I_RRM, and 3 V V_SD at 60 A - Eliminates need for external freewheeling diode in bidirectional converters
High-speed switching	1790 µJ E_on and 1470 µJ E_off at 800 V/60 A - Enables >50 kHz operation with <3.3 W switching loss per device

Applications

DC/DC Converter for EV/HEV

Main Inverter (Electric Traction)

Use Scenario: 800 V to 400 V bi-directional DC/DC stage in 800 V architecture EVs, delivering up to 25 kW.

IC Role / Device Role / Timing Role: Primary high-side SiC switch in dual-active-bridge topology, operating at 100 kHz with ZVS.

Use Value: 16 mΩ R_DS(on) and 24 ns t_rr reduce conduction + switching losses by 32 % vs. comparable Si IGBT, enabling smaller magnetics and cooling.

Use Scenario: Traction inverter phase-leg switch in 200 kW electric axle, handling 400–800 V battery input.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in three-phase bridge, driven with 18 V gate voltage and Kelvin source sensing.

Use Value: 112 A I_D rating and 0.23 °C/W R_thJC allow single-device per leg at 150 A RMS, reducing BOM count and PCB area by 40 %.

On-Board Charger (OBC)

High-Voltage Auxiliary Power Supply

Use Scenario: PFC and DC/DC stages in 22 kW bi-directional OBC for Level 2/3 charging.

IC Role / Device Role / Timing Role: Switching device in totem-pole PFC and CLLC resonant DC/DC, operating at 70–100 kHz.

Use Value: Low C_iss (3623 pF) and C_rss (22 pF) enable soft-switching across wide load range, achieving >96.5 % peak efficiency.

Use Scenario: Isolated 12 V/1 kW auxiliary supply powering vehicle ECUs, ADAS sensors, and infotainment from 800 V battery.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge converter, requiring fast body diode for lagging-leg ZVS.

Use Value: 24 ns t_rr and 220 nC Q_rr ensure reliable ZVS down to 20 % load, eliminating snubber losses and improving light-load regulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
WOLFSPEED C3M0016120K	Same 1200 V/16 mΩ rating but TO-247-4L package; no dedicated driver-source pin; R_thJC = 0.35 °C/W	Lacks Kelvin source sensing - requires external source inductor compensation in high-dV/dt traction inverters	Select when board space permits TO-247 mounting and gate driver supports higher source inductance tolerance
ROHM SCT3016ALHRL	1200 V/16 mΩ in TO-263-7L; Q_g = 135 nC; t_rr = 30 ns; R_thJC = 0.25 °C/W	Higher t_rr increases E_off by ~18 % in hard-switched PFC - limits max frequency to 80 kHz	Select for cost-sensitive industrial OBC where 10 kHz lower switching frequency is acceptable for thermal management

Compared with C3M0016120K and SCT3016ALHRL, SCT016H120G3AG provides superior dV/dt immunity via dedicated driver-source pin and lowest R_thJC, making it optimal for space-constrained, high-reliability automotive traction inverters demanding >95 % system efficiency at 100 kHz.

Availability

SCT016H120G3AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, AEC-Q101 compliance, and production-ready SiC MOSFETs with validated thermal performance.

Supply support for SCT016H120G3AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

SCT016H120G3AG belongs to ST's Automotive-grade SiC Power MOSFET product line, engineered specifically for high-efficiency, high-reliability electrified powertrain systems including traction inverters, OBCs, and DC/DC converters.

FAQ

What is the maximum gate-source voltage for safe continuous operation?

The recommended continuous V_GS range is -5 V to +18 V, with absolute maximum ratings of -10 V to +22 V. Transient V_GS up to +25 V or -11 V is allowed for pulses <1 μs and total duration ≤10 hours over lifetime. Exceeding +18 V continuously risks accelerated gate oxide degradation and threshold voltage shift.

How does the source-sensing pin (pin 2) improve switching performance?

Pin 2 provides a Kelvin connection to the driver IC's source reference, isolating gate drive loop from power-source inductance. This eliminates voltage spikes induced by high di/dt through source bond wires, preventing false turn-off and improving noise immunity in 100+ A motor drive applications.

Can SCT016H120G3AG replace silicon IGBTs in existing 1200 V inverter designs?

Yes, but gate drive and layout must be updated: gate voltage must increase to +18 V (vs. +15 V for IGBTs), gate resistor lowered to 10–18 Ω for 150 nC Q_g, and Kelvin source routing added. The 1200 V rating and 112 A current support direct substitution in space-constrained modules, though thermal interface must handle 0.23 °C/W R_thJC.

What is the safe operating area (SOA) limitation at 175 °C junction temperature?

At T_J = 175 °C, the SOA is limited by R_DS(on) at low V_DS and by bonding wire current capacity (112 A) at high V_DS. For 800 V operation, maximum pulsed current is 392 A for t_p ≤ 100 μs; continuous current drops to 98 A at T_C = 100 °C per Figure 13, requiring active cooling for sustained >80 A loads.

SCT016H120G3AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT016H120G3AG FAQ

1.How can I place an order for SCT016H120G3AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT016H120G3AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT016H120G3AG reliable?

The price and inventory of SCT016H120G3AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT016H120G3AG is usually 5 days.

3.What payment methods are accepted for SCT016H120G3AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT016H120G3AG transactions.

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4.How is shipping managed for SCT016H120G3AG?

SCT016H120G3AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT016H120G3AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT016H120G3AG?

For technical support, including SCT016H120G3AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT016H120G3AG requirements.

6.How does Aetrix verify that SCT016H120G3AG is sourced from the original manufacturer or authorized distributors?

All SCT016H120G3AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT016H120G3AG meets industry standards.

7.What is the process for return or replacement of SCT016H120G3AG?

All SCT016H120G3AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT016H120G3AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT016H120G3AG part is unused and in its original packaging.

Return procedure for SCT016H120G3AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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