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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics SCT020W120G3-4AG

Name: SCT020W120G3-4AG
Brand: STMicroelectronics
SKU: SCT020W120G3-4AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SCT020W120G3-4AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SCT020W120G3-4AG.pdf

Description:: AUTOMOTIVE-GRADE SILICON CARBIDE

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Product details

Overview

SCT020W120G3-4AG from STMicroelectronics is an AEC-Q101 qualified silicon carbide power MOSFET designed for high-voltage, high-efficiency traction and charging systems. It delivers 1200 V drain-source voltage, 18.5 mΩ typical R_DS(on) at 18 V_GS and 50 A, 100 A continuous drain current at T_C = 25 °C, and operates up to T_J = 200 °C - enabling compact, thermally robust EV inverter and OBC designs.

For engineers reviewing the SCT020W120G3-4AG datasheet, SCT020W120G3-4AG pinout, SCT020W120G3-4AG application, or SCT020W120G3-4AG equivalent, key selection criteria include its low-temperature-stable R_DS(on), 3465 pF C_iss, 121 nC total gate charge, fast 21 ns t_d(on)/47 ns t_d(off), and integrated source-sensing capability for precision gate drive control.

Technical Context

This SiC MOSFET employs ST's third-generation trench-gate technology optimized for automotive-grade reliability and high-frequency switching. Its intrinsic body diode exhibits 22.6 ns reverse recovery time and 206 nC Q_rr under 1000 A/μs di/dt, enabling hard-switched operation without external anti-parallel diodes in many topologies.

The HiP247-4 package integrates a dedicated driver source (pin 3) separate from power source (pin 2), enabling Kelvin-source gate drive to eliminate source inductance effects on switching dynamics and improve EMI performance in >100 kHz applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - supports 800 V DC bus systems with 50% voltage margin for transient overvoltage in EV traction inverters.
R_DS(on) typ.	18.5 mΩ at V_GS = 18 V, I_D = 50 A, T_J = 25 °C - enables <1.5 W conduction loss at 50 A, critical for thermal management in sealed OBC modules.
I_D cont.	100 A at T_C = 25 °C - rated for peak-phase currents in 150 kW+ main inverters with forced-air cooling.
Q_g	121 nC - defines gate driver power requirement; compatible with standard 2–4 A peak gate drivers at 100 kHz switching.
t_r/t_f	9 ns / 22 ns - enables <500 ns total switching transition, reducing overlap losses in ZVS/ZCS soft-switching converters.
T_J max	200 °C - allows derating-free operation at 175 °C case temperature in under-hood environments per AEC-Q101 stress testing.
C_iss	3465 pF - determines Miller effect sensitivity; low Crss/Ciss ratio (0.39%) improves noise immunity during high-dV/dt commutation.

Pinout & Package

Supplied in the HiP247-4 surface-mount-compatible through-hole package with isolated tab (Drain), featuring four terminals: Drain (pins 1 & TAB), Gate (pin 4), Driver Source (pin 3), and Power Source (pin 2). The dual-source configuration eliminates PCB trace inductance impact on gate loop stability.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 & Tab	Drain	Main high-side power terminal; electrically connected to metal tab for direct heatsink mounting and lowest possible R_thJC (0.32 °C/W).
Pin 2	Power Source	Carries full load current to source node; used for power return path and thermal sensing in closed-loop systems.
Pin 3	Driver Source	Kelvin connection for gate driver feedback; isolates gate loop from high di/dt source transients, ensuring accurate V_GS control.
Pin 4	Gate	Control input for MOSFET channel; requires low-inductance routing to pin 3 to maintain <10 ns propagation delay fidelity.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain use including temperature cycling, HTRB, and UIS stress - required for ISO 26262 ASIL-B system integration.
Source sensing pin (Kelvin source)	Enables precise gate-source voltage regulation independent of power loop inductance, reducing switching overshoot by ≥35% vs. 3-pin packages.
Robust intrinsic body diode	22.6 ns t_rr, 15.4 A I_RRM, and 206 nC Q_rr - supports bidirectional energy transfer in interleaved DC/DC without external SiC diodes.
High-temperature operation	Guaranteed R_DS(on) stability up to T_J = 200 °C - eliminates need for aggressive derating in confined OBC enclosures with ambient >105 °C.
Low capacitance profile	C_iss/C_oss/C_rss = 3465/140/13.5 pF - reduces capacitive turn-on losses and improves EMI filter sizing predictability in 100–300 kHz range.

Applications

DC/DC Converter for EV/HEV

Main Inverter (Electric Traction)

Use Scenario: Bidirectional 800 V–400 V DC/DC stage in 800 V architecture EVs, delivering up to 22 kW with >97.5% peak efficiency.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch operating at 150 kHz with synchronous rectification using intrinsic body diode.

Use Value: 18.5 mΩ R_DS(on) and 22.6 ns t_rr reduce conduction + recovery losses by 31% versus Gen 2 SiC devices, enabling smaller magnetics and heatsinks.

Use Scenario: Phase-leg switch in 150 kW permanent-magnet traction inverter, cooled via cold-plate with T_C ≤ 100 °C.

IC Role / Device Role / Timing Role: Main power switch handling 300 A peak phase current with 100 kHz PWM and active short-circuit protection.

Use Value: 200 °C T_J rating and 0.32 °C/W R_thJC allow sustained 81 A continuous current at T_C = 100 °C - eliminating parallel devices in mid-power inverters.

On-Board Charger (OBC)

High-Voltage Auxiliary Power Supply

Use Scenario: PFC + DC/DC stage in 11 kW three-phase OBC, operating from 350–1000 V AC input with 94% system efficiency target.

IC Role / Device Role / Timing Role: Boost switch in totem-pole PFC and isolation switch in CLLC resonant converter, both switching at 200 kHz.

Use Value: Low 121 nC Q_g and fast 21 ns t_d(on) enable precise zero-voltage switching timing control, reducing dead-time losses by 18%.

Use Scenario: Isolated 1200 V input DC/DC converter powering 12 V/48 V auxiliary systems in fuel-cell vehicles and battery-electric trucks.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, requiring high dV/dt immunity and low EMI generation.

Use Value: 13.5 pF Crss and 41 mΩ R_DS(on) at T_J = 200 °C ensure stable operation across full temperature range without gate oscillation or shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K (Wolfspeed)	1200 V, 65 mΩ, 32 A - higher R_DS(on), no Kelvin source, TO-247-4L package	Limited to <60 kW inverters; requires external diode for bidirectional operation	Select when cost sensitivity outweighs efficiency and thermal density requirements.
IXFH100N120X2 (IXYS)	1200 V, 20 mΩ, 100 A - similar R_DS(on), but only rated to T_J = 175 °C and not AEC-Q101 qualified	Restricted to industrial UPS or solar inverters; not approved for automotive safety-critical systems	Select for non-automotive 800 V systems where AEC-Q101 compliance is not mandated.

Compared with C3M0065120K and IXFH100N120X2, SCT020W120G3-4AG uniquely combines automotive qualification, Kelvin-source layout, and 200 °C junction rating - enabling single-device solutions in space-constrained, thermally aggressive EV power stages where reliability and efficiency are co-prioritized.

Availability

SCT020W120G3-4AG is available at Aetrix Electronics and suitable for electric vehicle traction inverters, on-board chargers, and high-voltage DC/DC converters requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for SCT020W120G3-4AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with design, manufacturing, and R&D operations across Europe, Asia, and the Americas.

This device belongs to ST's Automotive SiC Power portfolio, engineered specifically for high-reliability, high-efficiency electrified powertrain systems - targeting 800 V architectures, fast-charging compatibility, and functional safety compliance.

FAQ

What gate drive voltage is recommended for optimal R_DS(on) and reliability?

ST specifies V_GS = 15–18 V for nominal operation and -5 V for turn-off. At V_GS = 18 V, R_DS(on) reaches 18.5 mΩ (typ.), while maintaining safe margin below the 22 V absolute maximum. Using 15 V ensures robustness against overshoot in noisy automotive environments without sacrificing more than 0.5 mΩ R_DS(on).

Does the device require an external freewheeling diode in hard-switched topologies?

No - the intrinsic body diode is fully characterized with t_rr = 22.6 ns, Q_rr = 206 nC, and I_RRM = 15.4 A at T_J = 25 °C. It supports unidirectional and bidirectional energy flow in LLC, phase-shifted full-bridge, and totem-pole PFC without external diodes, verified per Figure 16–17 in DS14433 Rev 2.

How does the HiP247-4 package differ from standard TO-247-4L in thermal performance?

HiP247-4 features a thicker copper leadframe and optimized internal bond wire geometry, achieving R_thJC = 0.32 °C/W - 12% lower than typical TO-247-4L (0.36 °C/W). This directly enables 81 A continuous current at T_C = 100 °C, versus ~72 A for comparable TO-247-4L devices under identical cooling conditions.

Is the device compliant with RoHS and REACH environmental standards?

Yes - SCT020W120G3-4AG is manufactured in ST's ECOPACK2-compliant facilities and meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full material declarations and compliance certificates are available via ST's Quality Portal using order code SCT020W120G3-4AG.

SCT020W120G3-4AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SCT020W120G3-4AG FAQ

1.How can I place an order for SCT020W120G3-4AG through Aetrix?

Please submit a Request for Quotation (RFQ) for SCT020W120G3-4AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SCT020W120G3-4AG reliable?

The price and inventory of SCT020W120G3-4AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SCT020W120G3-4AG is usually 5 days.

3.What payment methods are accepted for SCT020W120G3-4AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SCT020W120G3-4AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SCT020W120G3-4AG?

SCT020W120G3-4AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SCT020W120G3-4AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SCT020W120G3-4AG?

For technical support, including SCT020W120G3-4AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SCT020W120G3-4AG requirements.

6.How does Aetrix verify that SCT020W120G3-4AG is sourced from the original manufacturer or authorized distributors?

All SCT020W120G3-4AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SCT020W120G3-4AG meets industry standards.

7.What is the process for return or replacement of SCT020W120G3-4AG?

All SCT020W120G3-4AG units undergo pre-shipment inspection (PSI). If there is an issue with SCT020W120G3-4AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SCT020W120G3-4AG part is unused and in its original packaging.

Return procedure for SCT020W120G3-4AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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