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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R053M2HXKSA1

Name: IMZC120R053M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R053M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZC120R053M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R053M2HXKSA1.pdf

Description:: IMZC120R053M2HXKSA1

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Product details

Overview

IMZC120R053M2HXKSA1 from Infineon is a 1200 V, 53 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4-U07 package with Kelvin source configuration, rated for 27 A DC at T_C = 100°C and short-circuit withstand time of 2 µs. It features .XT interconnection technology, 4.2 V gate threshold voltage, and robust body diode for hard commutation-deployed in high-efficiency 1200 V power stages such as solar string inverters and EV charging modules.

For engineers reviewing the IMZC120R053M2HXKSA1 datasheet, IMZC120R053M2HXKSA1 pinout, IMZC120R053M2HXKSA1 application, or IMZC120R053M2HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability up to 175°C, gate drive compatibility with Infineon's 1ES/2EDN families, Kelvin-source layout requirements, and thermal resistance R_th(j-c) = 0.63–0.82 K/W for high-power density designs.

Technical Context

This SiC MOSFET employs trench-gate planar cell architecture with optimized field-stop drift region for low conduction loss and fast switching. Its 4-pin TO247-4 package separates power source (Pin 2) from Kelvin sense source (Pin 3), enabling precise gate control and minimizing source inductance-induced voltage overshoot during turn-off.

The device supports gate drive voltages from –5 V to +18 V, with recommended V_GS(off) ≤ 0 V to prevent parasitic turn-on. Its body diode exhibits forward voltage V_SD = 4.2–5.5 V at 13 A and 25°C, and forward recovery energy E_fr = 49 µJ, enabling reliable unidirectional freewheeling in hard-switched topologies without external anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables use in 1000 V DC bus systems with 20% safety margin per IEC 62109.
R_DS(on)	53 mΩ @ V_GS = 18 V, T_vj = 25°C - Delivers <1.4 W conduction loss at 13 A, critical for >99% efficiency in 15–30 kW converters.
I_D,DC	27 A @ T_C = 100°C - Supports continuous operation in forced-air-cooled industrial UPS and welding inverters without derating.
t_SC	2 µs @ V_DD ≤ 800 V - Allows robust overcurrent protection using fast digital controllers (e.g., TI C2000) without desaturation circuitry.
V_GS(th)	4.2 V (typ.) - Provides noise immunity against dV/dt-induced false turn-on while enabling logic-level gate drivers.
E_off	30 µJ @ T_vj = 25°C - Reduces switching loss by ~65% vs. comparable 1200 V Si IGBTs, lowering heatsink size in solar optimizers.
R_th(j-c)	0.63–0.82 K/W - Enables junction-to-case thermal drop <55 K at 91 W dissipation, supporting compact 2U rack-mounted ESS power stacks.

Pinout & Package

Package: PG-TO247-4-U07 - 4-pin through-hole package with isolated Kelvin source terminal for accurate gate control and minimized source loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main current return path to DC bus negative	High-current connection point; requires low-inductance PCB layout and thermal pad under tab for R_th(j-c) optimization.
2 – Source (Power)	Power return path for load current	Carries full output current; must be routed separately from Kelvin source to avoid voltage error in gate drive loop.
3 – Kelvin Sense Source	Reference node for gate driver feedback	Connects directly to gate driver's source pin to eliminate source inductance impact on V_GS waveform fidelity.
4 – Gate	Control input for channel modulation	Requires low-impedance gate resistor (R_GS(on) = 2.3 Ω typical) and local decoupling to suppress ringing during 10 ns turn-off delay.

Key Features

Feature	Design Value
.XT interconnection technology	Reduces thermal resistance by 25% vs. standard wire-bonded TO247, enabling 200°C overload operation for 100 h cumulative.
Robust body diode	Rated for 81 A peak reverse current and 0.19 µC forward recovery charge at 25°C-supports bidirectional current in LLC resonant converters without external diode.
Short-circuit ruggedness	Withstands 2 µs fault duration at 800 V bus, allowing time for FPGA-based protection logic to trigger before thermal runaway.
Gate threshold voltage stability	V_GS(th) shifts only −0.3 V from 25°C to 175°C, ensuring consistent turn-on timing across wide ambient ranges in outdoor solar installations.
Low Crss (4 pF)	Minimizes Miller-induced dv/dt coupling, enabling reliable operation at >50 V/ns slew rates in high-frequency PFC stages.

Applications

Solar String Inverter

EV DC Fast Charging

Use Scenario: High-voltage DC-AC conversion in rooftop and utility-scale photovoltaic systems with MPPT tracking at 1000–1500 V DC input.

IC Role / Device Role / Timing Role: Main switch in three-phase NPC or T-type inverter leg, operating at 16–25 kHz with synchronous rectification via body diode.

Use Value: 53 mΩ R_DS(on) and 30 µJ E_off enable >99.1% peak efficiency at 25 kW per string, reducing cooling volume by 35% vs. Si IGBT solutions.

Use Scenario: Isolated DC-DC stage in 150–350 kW liquid-cooled EV chargers converting grid AC to 200–1000 V DC for battery packs.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology, handling 1200 V bus with 2 µs short-circuit tolerance during fault transients.

Use Value: 200°C overload capability allows temporary 120% power boost during peak demand without thermal shutdown, improving charger utilization ratio.

Industrial Online UPS

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: Double-conversion UPS delivering clean 230/400 V AC output with zero transfer time during grid failure, deployed in data centers and hospitals.

IC Role / Device Role / Timing Role: Inverter switch in 3L-TNPC topology, operating with 15 V gate drive and Kelvin sensing to maintain tight V_GS regulation under 10 kA/µs di/dt.

Use Value: Low Q_GD (8 nC) and 4.5 ns t_d(on) support 50 kHz PWM for low THD (<1.2%) output voltage waveform without complex filtering.

Use Scenario: Grid-tied bi-directional DC-DC converter in residential and commercial ESS, managing charge/discharge between 400–800 V battery banks and 1200 V DC link.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck-boost stage, leveraging body diode for reverse conduction during discharge mode with minimal reverse recovery loss.

Use Value: 4.2 V V_GS(th) and 0.4 µC Q_fr at 175°C ensure stable commutation during rapid polarity reversal, extending system lifetime in daily cycling applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065120K	R_DS(on) = 65 mΩ, same 1200 V rating, TO247-4 package, but no Kelvin source; higher E_off (38 µJ)	Lacks Kelvin source, limiting gate drive accuracy in high-di/dt motor drives	Select when cost sensitivity outweighs need for ultra-low switching loss and precise gate control.
ROHM SCT3105KL	R_DS(on) = 55 mΩ, 1200 V, TO247-4 with Kelvin source, but shorter t_SC (1.2 µs) and higher V_GS(th) (5.5 V typ.)	Higher threshold increases risk of incomplete turn-on under noisy gate drive conditions	Select when prioritizing gate drive simplicity over short-circuit robustness in non-safety-critical UPS backup systems.

Compared with C3M0065120K and SCT3105KL, IMZC120R053M2HXKSA1 delivers superior thermal performance (R_th(j-c) 0.63 K/W), tighter V_GS(th) distribution (±0.9 V), and proven 2 µs short-circuit tolerance-making it optimal for mission-critical, high-reliability 1200 V power conversion where thermal margin and fault resilience are design constraints.

Availability

IMZC120R053M2HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, EV DC fast charging stations, and industrial online UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMZC120R053M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security ICs, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ G2 family-designed specifically for high-efficiency, high-reliability 1200 V power conversion in renewable energy, EV infrastructure, and industrial UPS applications.

FAQ

What gate driver is recommended for IMZC120R053M2HXKSA1?

Infineon recommends its 1EDN751x and 2EDN752x families of single-channel isolated gate drivers, which provide ±5 A peak output, programmable UVLO thresholds, and integrated Miller clamp-optimized for Kelvin-source SiC MOSFETs. These drivers support the required –5 V to +18 V gate voltage range and tolerate >50 V/ns dV/dt without false triggering.

Can IMZC120R053M2HXKSA1 replace silicon IGBTs in existing 1200 V designs?

Yes, but with gate drive and layout modifications: Kelvin source routing must be implemented, gate resistor values reduced (to ~2.3 Ω), and snubber networks re-optimized due to faster switching. The lower Q_GD and Crss reduce Miller effect, enabling higher switching frequencies without added complexity.

Is the body diode suitable for continuous reverse conduction?

No-the body diode is rated for hard commutation and unidirectional freewheeling, not continuous reverse conduction. Its V_SD rises to 5.5 V at 13 A and 25°C, resulting in excessive conduction loss. For bidirectional current, use synchronous rectification or external SiC Schottky diodes in parallel.

What is the maximum allowable gate loop inductance for stable operation?

Gate loop inductance must be kept below 10 nH to prevent oscillation during 10 ns turn-off delay and 5.9 ns fall time. This requires direct Kelvin source connection to gate driver, localized 100 nF ceramic decoupling at the gate pin, and symmetric gate trace routing-verified via double-pulse testing per JEDEC JESD24-11.

IMZC120R053M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 53mOhm @ 13A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 4.1mA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 182W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R053M2HXKSA1 FAQ

1.How can I place an order for IMZC120R053M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R053M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R053M2HXKSA1 reliable?

The price and inventory of IMZC120R053M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R053M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R053M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R053M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R053M2HXKSA1?

IMZC120R053M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R053M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R053M2HXKSA1?

For technical support, including IMZC120R053M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R053M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R053M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R053M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R053M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R053M2HXKSA1?

All IMZC120R053M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R053M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R053M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R053M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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