Infineon Technologies IPTG025N15NM6ATMA1

Overview

IPTG025N15NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, designed for high-efficiency power conversion in industrial and automotive DC-DC stages. It delivers 150 V V_DS, 2.5 mΩ R_DS(on) (max), 264 A continuous drain current at T_C = 25 °C, and 0.38 °C/W thermal resistance (junction-to-case), enabling high-current synchronous rectification in 48 V–60 V bus systems.

For engineers reviewing the IPTG025N15NM6ATMA1 datasheet, IPTG025N15NM6ATMA1 pinout, IPTG025N15NM6ATMA1 application, or IPTG025N15NM6ATMA1 equivalent, key selection criteria include its 105 nC total gate charge, 310 nC output charge, 184 nC switching charge at 500 A/μs, PG-HSOG-8 package with exposed drain tab, and 100% avalanche-tested ruggedness for hard-switching topologies.

Technical Context

This device employs a trench-gate superjunction structure optimized for low Q_g/R_DS(on) ratio and fast switching with controlled dV/dt. Its gate plateau voltage of 5.4 V ensures stable Miller region control during turn-on, while the 23–35 nC Q_gd supports efficient zero-voltage switching (ZVS) in resonant converters.

The integrated body diode features 0.87–1.0 V forward voltage at 120 A and 40–80 ns reverse recovery time under 500 A/μs di/dt, making it suitable for bidirectional energy transfer in active clamp and LLC secondary-side designs without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: PG-HSOG-8 - Thermally enhanced 8-pin surface-mount package with large exposed drain copper tab on bottom side for direct PCB heat sinking and low-inductance high-current paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Compared with IPB025N15N5 and STH180N15F7-2, IPTG025N15NM6ATMA1 provides superior thermal performance via PG-HSOG-8's low R_thJC, enabling higher power density in compact industrial converters-while its 105 nC Q_g demands stronger gate drivers than STH180N15F7-2 but delivers lower conduction loss above 80 A.

Availability

IPTG025N15NM6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, onboard EV chargers, and renewable energy DC optimizers requiring stable component supply and long-term production continuity.

Supply support for IPTG025N15NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™ 6 family-engineered specifically for high-frequency, high-efficiency power conversion in industrial and automotive traction-grade applications demanding low R_DS(on), rugged UIS capability, and thermally optimized packaging.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation up to this limit when thermal design maintains T_j ≤ 175 °C. Derating curves in the datasheet show that at T_C = 100 °C, the continuous drain current drops to 173 A, confirming thermal limits must be validated using actual board layout and cooling conditions.

Does IPTG025N15NM6ATMA1 support paralleling for higher current capacity?

Yes-the device exhibits positive temperature coefficient for R_DS(on) (normalized to 25 °C, R_DS(on) increases with T_j), enabling stable current sharing when paralleled. Layout best practices require matched gate trace lengths, Kelvin source connections, and symmetrical thermal coupling to avoid imbalance under dynamic load conditions.

Is the body diode suitable for synchronous rectification without external diode assistance?

Yes-the integrated body diode is fully characterized with 0.87–1.0 V V_SD at 120 A and 40–80 ns t_rr at 500 A/μs, making it viable for synchronous rectification in LLC and phase-shifted full-bridge topologies. No external Schottky is required unless sub-20 ns recovery or <0.7 V forward drop is mandated.

What is the recommended gate resistor value for 100 kHz hard-switched operation?

A 2.2 Ω gate resistor is recommended for 100 kHz operation with a 12 V gate drive, balancing switching speed (34 ns t_d(off)) and gate oscillation damping. This value limits peak gate current to ~5.5 A while keeping EMI within Class B limits; values below 1.5 Ω increase dV/dt stress and require tighter layout control.