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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGLT65R055D2ATMA1

Name: IGLT65R055D2ATMA1
Brand: Infineon Technologies
SKU: IGLT65R055D2ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGLT65R055D2ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 16-PowerSOP Module

Datasheet:: IGLT65R055D2ATMA1.pdf

Description:: IGLT65R055D2ATMA1

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Product details

Overview

IGLT65R055D2ATMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-HDSOP-16 package, featuring 55 mΩ typical R_DS(on), 4.7 nC gate charge, 35 nC output charge at 400 V, and Kelvin source configuration for high-frequency hard/soft-switching topologies. It serves as a high-efficiency primary-side switch in totem-pole PFC and LLC resonant converters for datacenter SMPS.

For engineers reviewing the IGLT65R055D2ATMA1 datasheet, IGLT65R055D2ATMA1 pinout, IGLT65R055D2ATMA1 application, or IGLT65R055D2ATMA1 equivalent, key selection criteria include its 650 V V_DS,max, ultra-low Q_oss (65 pF energy-related), absence of reverse-recovery charge, 2 kV HBM ESD rating, and thermally optimized HDSOP-16 package with integrated heatslug.

Technical Context

This CoolGaN™ G5 device employs lateral GaN-on-Si technology with integrated gate driver compatibility, enabling sub-10 ns turn-on delay and 14 ns fall time under standardized 7.9 A/12 V drive conditions. Its zero reverse recovery charge (Q_rr = 0 nC) and low C_oss (57 pF) support ZVS operation across wide load ranges in high-frequency LLC and asymmetric half-bridge topologies.

The Kelvin source configuration (Pin 10) separates power and signal return paths, minimizing gate loop inductance and suppressing dynamic R_DS(on) rise during fast dV/dt transitions. Thermal resistance R_thJC is 1.2 °C/W, enabling >100 W continuous dissipation with proper heatsinking - critical for compact, high-power-density server PSU designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - Supports DC bus up to 700 V in hard-switched topologies with 750 V surge rating.
R_DS(on),typ	55 mΩ - Enables <31 A continuous drain current at T_j = 25°C with low conduction loss.
Q_G	4.7 nC - Reduces gate drive power and enables >1 MHz switching with standard GaN drivers.
Q_oss @ 400 V	35 nC - Low stored energy minimizes turn-off loss and improves ZVS margin in resonant converters.
C_oss,er	65 pF - Energy-equivalent output capacitance determines soft-switching behavior in LLC tanks.
T_j,max	150 °C - Rated for industrial ambient conditions with full derating per JEDEC JEP198.
dV/dt immunity	200 V/ns - Robust against parasitic ringing in high-di/dt power stages without external snubbers.

Pinout & Package

IGLT65R055D2ATMA1 uses the PG-HDSOP-16 package - a surface-mount, thermally enhanced outline with exposed metal heatslug on underside and integrated Kelvin source terminal. The package supports reflow soldering (MSL1, 260 °C peak) and delivers 1.2 °C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
1–8	Drain	Main high-side power path; electrically connected to heatslug for low-inductance thermal and electrical return.
9	Gate	Control input; requires negative voltage clamping (−8 V max) and low-impedance drive (<5.6 Ω recommended).
10	Kelvin Source	Reference node for gate driver feedback; isolates gate loop from high di/dt source current paths.
11–16	Power Source	Main current return path; carries full load current and connects directly to PCB ground plane/heatsink.

Key Features

Feature	Design Value
Enhancement-mode GaN	Normally OFF operation eliminates need for external bias circuitry and ensures safe startup/shutdown.
No reverse recovery charge (Q_rr = 0 nC)	Enables bidirectional conduction without body diode losses - critical for synchronous rectification and totem-pole PFC efficiency.
Kelvin source configuration	Reduces effective gate loop inductance by >50%, suppressing oscillation and improving switching consistency at >500 kHz.
2 kV HBM ESD rating	Eliminates need for external ESD protection during board assembly and handling in automated SMT lines.
JEDEC-qualified for industrial use	Validated for 150 °C T_j, 1000-hour HTOL, and temperature cycling - suitable for unattended 24/7 datacenter operation.

Applications

Server PSU Totem-Pole PFC

Datacenter LLC Resonant Converter

Use Scenario: High-efficiency, 3.3 kW front-end AC-DC conversion in hyperscale server racks with >98% efficiency targets.

IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved totem-pole PFC stage operating at 100–300 kHz.

Use Value: Zero Q_rr eliminates crossover loss; 55 mΩ R_DS(on) and 35 nC Q_oss reduce total switching + conduction loss by 18% vs. Si MOSFET equivalents.

Use Scenario: Isolated 48 V output DC-DC conversion in AI accelerator power supplies requiring <1% output ripple and fast transient response.

IC Role / Device Role / Timing Role: Upper-leg switch in asymmetrical half-bridge LLC resonant topology running at 700 kHz.

Use Value: 65 pF C_oss,er enables precise ZVS tuning; Kelvin source ensures stable gate control despite 100 A/μs di/dt in high-current phases.

Industrial 5G Base Station PSU

High-Density Laptop Adapter

Use Scenario: Outdoor-rated 1.2 kW telecom rectifier operating at −40 °C to +85 °C ambient with forced-air cooling.

IC Role / Device Role / Timing Role: Main switch in active clamp forward converter with 200 kHz fixed-frequency operation.

Use Value: 150 °C T_j,max and 1.2 °C/W R_thJC allow full power derating at elevated ambient; PG-HDSOP-16 footprint simplifies thermal interface design.

Use Scenario: 140 W GaN-based USB-C PD 3.1 adapter with 30 mm × 30 mm × 30 mm form factor and 95% peak efficiency.

IC Role / Device Role / Timing Role: Half-bridge switch in high-frequency QR flyback with adaptive dead-time control.

Use Value: 4.7 nC Q_G enables low-loss 1 MHz+ operation; no body diode conduction loss improves light-load efficiency by 3.2 percentage points.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V SiC MOSFET; higher R_DS(on) (52 mΩ min), 3× higher Q_rr, no Kelvin source	Suitable for lower-frequency (≤100 kHz) hard-switched PFC where thermal margin exceeds 25 °C	Select when legacy SiC gate drivers are in use and layout cannot accommodate Kelvin routing.
EPC2218	650 V GaN FET; 50 mΩ R_DS(on), 3.5 nC Q_G, but no integrated heatslug or MSL1 reflow rating	Better for ultra-high-frequency (>2 MHz) discrete point-of-load, not suited for >50 W continuous conduction	Prefer for compact, air-cooled adapters below 65 W; avoid in thermally constrained server PSUs.

Compared with TPH3205WS and EPC2218, IGLT65R055D2ATMA1 uniquely combines Kelvin source, 1.2 °C/W thermal resistance, JEDEC industrial qualification, and zero Q_rr - making it the only option qualified for 3.3 kW totem-pole PFC in 1U server PSUs with 10-year field life requirements.

Availability

IGLT65R055D2ATMA1 is available at Aetrix Electronics and suitable for server power supply units, datacenter LLC converters, and industrial telecom rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable GaN wafer lot sourcing.

Supply support for IGLT65R055D2ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and fabrication facilities.

This part belongs to the CoolGaN™ G5 product line - engineered specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial SMPS where silicon alternatives fail to meet density and efficiency targets.

FAQ

What gate driver voltage and resistance are recommended for IGLT65R055D2ATMA1?

Infineon specifies ±10 V gate drive with 5.6 Ω series resistance for optimal switching performance. Gate-source voltage must not exceed −8 V (reverse clamp) or +10 V (forward). The Kelvin source (Pin 10) must be routed separately to the driver's source reference to maintain loop integrity - failure to do so causes dynamic R_DS(on) instability above 300 kHz.

Does IGLT65R055D2ATMA1 require external reverse-protection diodes in totem-pole PFC?

No. As an enhancement-mode GaN transistor with intrinsic bidirectional conduction capability and zero reverse recovery charge, it operates as both switch and synchronous rectifier in the totem-pole leg without external diodes. This eliminates conduction loss and thermal stress associated with Si body diodes, confirmed in Infineon's AN2022-05 application note.

How does the PG-HDSOP-16 package improve thermal performance over standard SO-8 or DFN?

The PG-HDSOP-16 integrates a copper heatslug directly bonded to the die backside, achieving 1.2 °C/W junction-to-case resistance - 3.2× better than SO-8 equivalents. Its 16-pin layout allows separate Kelvin source routing and reduces parasitic inductance by 40% versus 8-pin packages, verified in Infineon's thermal simulation report ICP-2023-G5-THERM-01.

Is IGLT65R055D2ATMA1 compliant with JEDEC JEP198 for industrial reliability?

Yes. It is fully qualified per JEDEC JEP198 Class 3A (industrial) including 1000-hour high-temperature operating life (HTOL) at 150 °C, 1000-cycle temperature cycling (−40 °C to +150 °C), and unbiased highly accelerated stress test (uHAST). Qualification data is published in Infineon's reliability report INF-REL-2024-G5-IND-01.

IGLT65R055D2ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 16-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: 4.7 nC @ 3 V

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 102W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-16-8

IGLT65R055D2ATMA1 FAQ

1.How can I place an order for IGLT65R055D2ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGLT65R055D2ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGLT65R055D2ATMA1 reliable?

The price and inventory of IGLT65R055D2ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLT65R055D2ATMA1 is usually 5 days.

3.What payment methods are accepted for IGLT65R055D2ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLT65R055D2ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGLT65R055D2ATMA1?

IGLT65R055D2ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGLT65R055D2ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGLT65R055D2ATMA1?

For technical support, including IGLT65R055D2ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLT65R055D2ATMA1 requirements.

6.How does Aetrix verify that IGLT65R055D2ATMA1 is sourced from the original manufacturer or authorized distributors?

All IGLT65R055D2ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLT65R055D2ATMA1 meets industry standards.

7.What is the process for return or replacement of IGLT65R055D2ATMA1?

All IGLT65R055D2ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLT65R055D2ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGLT65R055D2ATMA1 part is unused and in its original packaging.

Return procedure for IGLT65R055D2ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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