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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R040M2HXKSA1

Name: IMW65R040M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R040M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R040M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R040M2HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

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Product details

Overview

IMW65R040M2HXKSA1 from Infineon is a 650 V, 40 mΩ silicon carbide (SiC) trench MOSFET in PG-TO247-3 package, featuring ultra-low switching losses (Eon = 163 µJ, Eoff = 18 µJ @ 400 V), benchmark gate threshold voltage (V_GS(th) = 4.5 V), and robust body diode operation under hard commutation-used as a high-efficiency power switch in EV charging infrastructure and solar PV inverters.

For engineers reviewing the IMW65R040M2HXKSA1 datasheet, IMW65R040M2HXKSA1 pinout, IMW65R040M2HXKSA1 application, or IMW65R040M2HXKSA1 equivalent, key selection criteria include R_DS(on) at 175 °C (49 mΩ max), Q_G = 28 nC, thermal resistance R_th(j-c) = 0.87 °C/W, and dv/dt ruggedness of 200 V/ns for reliable high-frequency hard-switching designs.

Technical Context

This CoolSiC™ Gen 2 MOSFET employs Infineon's silicon carbide trench process with .XT interconnection technology, enabling superior thermal performance and stable gate drive behavior across industrial temperature range (–55 to +175 °C). Its internal body diode supports bidirectional current flow with t_fr = 29.3 ns and Q_fr = 94 nC, critical for ZVS/ZCS topologies.

The device operates with recommended gate voltages of 0 V (turn-off) and 18 V (turn-on), exhibits low Crss (5.8 pF) for reduced Miller effect, and delivers 142 A peak drain current (I_DM) with avalanche energy rating (E_AS) of 132 mJ-validated per JEDEC for industrial applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 650 V in boost, LLC, and two-level inverter stages without derating.
R_DS(on), max @ 175 °C	49 mΩ - Ensures low conduction loss and thermal stability in continuous high-power operation (e.g., 30 kW EV charger).
Q_G, typ	28 nC - Enables fast, low-loss switching with standard gate drivers (e.g., 1EDN7512B) at ≥100 kHz.
E_oss @ 400 V	7.2 µJ - Reduces turn-off loss and improves efficiency in hard-switched PFC and inverter legs.
R_th(j-c)	0.87 °C/W - Supports >170 W power dissipation at T_C = 25 °C, simplifying heatsink sizing for TO-247 mounting.
dv/dt ruggedness	200 V/ns - Prevents false turn-on during high dV/dt transients in bridge configurations without active Miller clamp.
I_DM	142 A - Sustains short-duration overload conditions (e.g., motor startup surges or grid fault currents).

Pinout & Package

Package: PG-TO247-3 - Industry-standard through-hole package with isolated tab (drain-connected), optimized for high-current PCB mounting and thermal interface to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; requires low-inductance layout due to 3.4 Ω internal gate resistance and 28 nC total charge.
Pin 2 (Drain)	Main power output / high-side switch node	Connected to internal SiC die drain and metal tab; electrically tied to heatsink-requires isolation if heatsink is grounded.
Pin 3 (Source)	Power return / reference node	Serves as gate drive reference and current sense point; must be routed with minimal loop inductance for stable switching.

Key Features

Feature	Design Value
Ultra-low switching losses	E_on + E_off = 181 µJ @ 400 V/22.9 A enables >99% efficiency in 100 kHz+ totem-pole PFC designs.
Benchmark V_GS(th) = 4.5 V	Reduces risk of unintended turn-on during noise transients and allows compatibility with 5 V logic-level gate drivers.
Robust body diode under hard commutation	t_fr = 29.3 ns and Q_fr = 94 nC support reliable freewheeling in synchronous rectification without external Schottky diodes.
.XT interconnection technology	Improves thermal cycling reliability and reduces junction-to-case thermal resistance by 15% vs. conventional wire-bonded TO-247.
JEDEC-qualified for industrial use	Validated for 15-year lifetime at T_j = 150 °C, supporting long-term deployment in UPS and energy storage systems.

Applications

EV Charging Infrastructure

Solar PV Inverters

Use Scenario: 22 kW on-board chargers and 150 kW DC fast-charging modules operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Primary high-side switch in dual-active-bridge (DAB) and totem-pole PFC stages.

Use Value: 40 mΩ R_DS(on) and 181 µJ total switching loss reduce thermal load and enable air-cooled module designs.

Use Scenario: String inverters converting 600–1000 V DC to 230 V AC with >98.5% peak efficiency.

IC Role / Device Role / Timing Role: High-voltage leg switch in three-phase NPC or T-type inverter topologies.

Use Value: 200 V/ns dv/dt ruggedness prevents spurious turn-on during phase-leg cross-conduction events.

Energy Storage Systems

Industrial UPS

Use Scenario: Bi-directional DC/DC converters in battery energy storage systems (BESS) with 400–800 V nominal bus.

IC Role / Device Role / Timing Role: Power switch in isolated dual-active-bridge (DAB) converters managing charge/discharge cycles.

Use Value: Robust body diode operation eliminates need for anti-parallel Si diodes, reducing BOM count and layout area.

Use Scenario: Online double-conversion UPS units delivering clean 3-phase power with <1 ms transfer time.

IC Role / Device Role / Timing Role: IGBT replacement in high-frequency inverter stage for improved efficiency and reduced cooling requirements.

Use Value: 0.87 °C/W R_th(j-c) allows 172 W dissipation at 25 °C case temperature-enabling compact, fanless UPS enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65H40F6AG	R_DS(on) = 40 mΩ (typ), Q_G = 32 nC, R_th(j-c) = 0.95 °C/W, no integrated body diode characterization data provided	Limited published hard-commutation diode specs; less validated for solar inverter freewheeling stress	Prefer when gate drive margin >2 V is available and body diode robustness is secondary to cost
WOLFSPEED C3M0040065K	R_DS(on) = 40 mΩ (typ), Q_G = 26 nC, R_th(j-c) = 0.90 °C/W, V_GS(th) = 3.2–4.2 V (lower threshold increases noise sensitivity)	Lower V_GS(th) requires tighter gate drive control to avoid parasitic turn-on in noisy environments	Prefer when minimizing Q_G is critical and system EMI filtering is robust

Compared with STP65H40F6AG and C3M0040065K, IMW65R040M2HXKSA1 offers superior dv/dt immunity (200 V/ns), JEDEC-qualified industrial reliability, and fully characterized body diode performance-making it optimal for mission-critical, high-reliability power conversion where hard commutation and long service life are mandatory.

Availability

IMW65R040M2HXKSA1 is available at Aetrix Electronics and suitable for EV charging infrastructure, solar PV inverters, and industrial UPS requiring stable component supply, long-lifecycle assurance, and traceable sourcing from Infineon's qualified production line.

Supply support for IMW65R040M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing facilities serving automotive, industrial, and renewable energy markets.

This part belongs to the CoolSiC™ Gen 2 650 V MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in demanding industrial and grid-connected applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous DC drain current (I_DC) is 32 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This rating reflects thermal limits under steady-state conduction, assuming proper heatsinking and ambient conditions meeting Infineon's derating guidelines.

Is the internal body diode rated for hard commutation in synchronous rectification?

Yes-the device is explicitly validated for robust body diode operation under hard commutation, with measured forward recovery time (t_fr) of 29.3 ns and forward recovery charge (Q_fr) of 94 nC at 1000 A/µs di/dt, enabling reliable use in totem-pole PFC without external diodes.

Can IMW65R040M2HXKSA1 replace silicon IGBTs in existing 1700 V-class inverter designs?

No-it is rated for 650 V V_DSS, not 1700 V. It replaces 650 V silicon MOSFETs or IGBTs in applications like 800 V EV architectures or 1000 V solar string inverters, but requires full system re-evaluation of bus voltage, snubbing, and gate drive for SiC-specific dynamics.

Does this part require negative gate voltage for reliable turn-off?

No-Infineon specifies 0 V as the recommended turn-off gate voltage (V_GS(off)). The device is designed to remain fully off at 0 V, with robust immunity to parasitic turn-on even under high dv/dt, eliminating need for negative bias in most industrial applications.

IMW65R040M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 22.9A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 4.6mA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 997 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 172W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R040M2HXKSA1 FAQ

1.How can I place an order for IMW65R040M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R040M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R040M2HXKSA1 reliable?

The price and inventory of IMW65R040M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R040M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R040M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R040M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R040M2HXKSA1?

IMW65R040M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R040M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R040M2HXKSA1?

For technical support, including IMW65R040M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R040M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R040M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R040M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R040M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R040M2HXKSA1?

All IMW65R040M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R040M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R040M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R040M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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