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Nexperia USA Inc. PSMN1R0-100ASEJ
- Part No.:
- PSMN1R0-100ASEJ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Datasheet:
-
PSMN1R0-100ASEJ.pdf
- Description:
- PSMN1R0-100ASE/SOT8000A/CCPAK1
- Quantity:
- Payment:
- Shipping:
Inventory:2,119
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Product details
Overview
PSMN1R0-100ASEJ from Nexperia is an N-channel enhancement-mode MOSFET in CCPAK1212 (SOT8000A) package, rated for 100 V drain-source voltage, 1.04 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 430 A continuous drain current at Tmb = 25 °C and features enhanced Safe Operating Area (SOA) for linear-mode hot-swap and soft-start applications in 48 V telecom power systems.
For engineers reviewing the PSMN1R0-100ASEJ datasheet, PSMN1R0-100ASEJ pinout, PSMN1R0-100ASEJ application, or PSMN1R0-100ASEJ equivalent, key selection criteria include its ultra-low RDS(on), 1.55 kW total power dissipation capability, JEDEC-qualified CCPAK1212 copper-clip thermal performance, and avalanche ruggedness (1630 mJ unclamped).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for high-current linear-mode operation. Its SOA curve is fully characterized up to 100 V and 430 A with pulse durations from 10 µs to DC, enabling robust inrush current handling during hot-swap turn-on without thermal runaway.
The device integrates a low-inductance, high-thermal-conductivity copper-clip structure (Rth(j-mb) = 0.075 K/W typical), with drain-connected mounting base and 12 parallel drain terminals plus gate and source terminals - all designed to minimize parasitic inductance and maximize power cycling reliability under repetitive avalanche stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V maximum - supports 48 V backplane systems with ≥2× safety margin against transients. |
| RDS(on) | 0.82–1.04 mΩ at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 32 A, critical for high-efficiency load switching. |
| ID (continuous) | 430 A at Tmb = 25 °C - validated via application testing; limited in practice by PCB thermal design and mounting base temperature. |
| Ptot | 1.55 kW at Tmb = 25 °C - highest power rating among 100 V discrete MOSFETs in open-market JEDEC packages. |
| Rth(j-mb) | 0.075 K/W typical - enables direct thermal coupling to heatsink via exposed drain-mounting base, reducing junction-to-ambient thermal resistance by >50% vs. TO-263. |
| QGD | 14.5–111 nC - low gate-drain charge improves switching controllability in linear mode and reduces Miller-induced oscillation risk. |
| EAS | 1630 mJ (unclamped, 100% tested) - supports single-pulse energy absorption during fault conditions without failure. |
Pinout & Package
CCPAK1212 (SOT8000A) is a 13-terminal surface-mount copper-clip package measuring 12 mm × 12 mm × 2.5 mm, with JEDEC-qualified footprint, 2.0 mm pitch, and exposed drain-mounting base thermally and electrically connected to all 12 drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate input - single low-inductance connection for precise VGS control during soft-start ramping. |
| 2–6 | S | Source return path - five parallel terminals minimize source loop inductance and improve current sharing in high-di/dt switching. |
| 7–12 | D | Drain power path - six parallel terminals + mounting base provide ultra-low-resistance, high-current drain conduction and thermal spreading. |
| mb | D (mounting base) | Drain-connected thermal interface - serves as primary heat extraction path and structural ground plane for PCB-level thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Fully optimized SOA | Guaranteed linear-mode operation up to 100 V/430 A with defined pulse limits - eliminates need for external SOA derating calculations in hot-swap controllers. |
| Ultra-low RDS(on) | 0.82 mΩ typ. minimizes I²R losses below 1 W at 32 A - directly improves system efficiency and reduces heatsink size in 48 V telecom PSUs. |
| CCPAK1212 package | JEDEC-qualified copper-clip construction delivers 2.5× lower Rth(j-mb) vs. D²PAK and enables second-source compatibility across qualified suppliers. |
| Avalanche ruggedness | 1630 mJ unclamped EAS, 100% production-tested - ensures reliable operation during bus overvoltage or short-circuit events without external snubbers. |
| High-temperature rating | 175 °C junction-rated operation - supports deployment in sealed telecom chassis where ambient temperatures exceed 105 °C. |
Applications
| Hot Swap Controller Interface | 48 V Telecom Load Switch |
|---|---|
|
Use Scenario: Controlled insertion of line cards into live 48 V backplane without causing bus voltage droop or controller latch-off. IC Role / Device Role / Timing Role: Main power FET in hot-swap circuit, operating in linear mode during inrush limiting phase before full turn-on. Use Value: Enhanced SOA allows sustained 100–200 A inrush currents at 40–60 V for >10 ms without thermal runaway - eliminating need for active SOA monitoring circuits. |
Use Scenario: High-current power delivery to FPGA, ASIC, or DSP modules on 48 V intermediate bus architecture boards. IC Role / Device Role / Timing Role: Primary load switch enabling controlled power-up sequencing and fault-isolation via gate-driven ON/OFF control. Use Value: 0.82 mΩ RDS(on) limits conduction loss to <0.85 W at 32 A - reduces localized heating and enables compact double-sided PCB layouts. |
| Soft-Start Power Sequencing | E-Fuse Protection Circuit |
|
Use Scenario: Gradual ramp-up of output voltage in high-capacitance server VRMs to prevent input capacitor charging surges. IC Role / Device Role / Timing Role: Linear-mode pass element modulated by external op-amp or dedicated soft-start IC to regulate dV/dt. Use Value: SOA stability across Tj = 25–175 °C ensures predictable current limiting behavior during extended ramp periods (>100 ms) without parameter drift. |
Use Scenario: Replace mechanical fuses in 48 V data center power distribution units with electronic overcurrent protection. IC Role / Device Role / Timing Role: Current-sensing power switch that trips within microseconds upon detecting >500 A fault current. Use Value: 3216 A peak pulsed drain current rating and 1630 mJ avalanche energy enable safe interruption of high-energy faults without destructive failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, high-SOA N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP020N10N5 | 100 V, 2.0 mΩ RDS(on), TO-220FP package, Rth(j-a) = 1.2 K/W - higher conduction loss, lower thermal performance. | Limited to ≤150 A continuous due to package thermal limits; unsuitable for sustained linear-mode operation above 50 V. | Select only if board space constraints prohibit CCPAK1212 footprint and SOA requirements are relaxed. |
| Vishay SiR626DP | 100 V, 1.25 mΩ RDS(on), PowerPAK® 1212-8 package, Rth(j-mb) = 0.12 K/W - 60% higher thermal resistance than PSMN1R0-100ASEJ. | SOA not characterized beyond 50 V; lacks 100% avalanche testing - requires external clamping for unclamped inductive switching. | Acceptable for switched-mode load switching but not recommended for hot-swap or soft-start linear-mode use cases. |
Compared with IPP020N10N5 and SiR626DP, PSMN1R0-100ASEJ provides 2× lower RDS(on), 1.6× better thermal resistance, and production-verified avalanche ruggedness - making it uniquely suited for mission-critical 48 V hot-swap and soft-start applications demanding both efficiency and fault resilience.
Availability
PSMN1R0-100ASEJ is available at Aetrix Electronics and suitable for 48 V telecom power systems, high-density server power distribution units, and industrial hot-swap backplanes requiring stable component supply, long-term lifecycle support, and JEDEC-qualified second-source compatibility.
Supply support for PSMN1R0-100ASEJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and application-specific MOSFETs.
This part belongs to Nexperia's Application Specific MOSFETs (ASFETs) product line, engineered specifically for hot-swap, soft-start, and e-fuse functions in high-voltage, high-current power infrastructure - emphasizing SOA integrity, thermal robustness, and JEDEC-standardized packaging.
FAQ
What is the maximum continuous drain current rating for PSMN1R0-100ASEJ?
The datasheet specifies 430 A continuous drain current at mounting base temperature (Tmb) = 25 °C, validated through application testing. In real-world designs, actual current is constrained by PCB copper area, heatsink efficiency, and ambient temperature - typically derated to 250–350 A for sustained operation at Tmb ≤ 80 °C.
Does PSMN1R0-100ASEJ require a gate resistor for hot-swap linear-mode operation?
Yes - a low-value gate resistor (typically 1–5 Ω) is required to dampen gate oscillation and control dI/dt during linear-mode turn-on. The device's low QGD (14.5–111 nC) and high transconductance make it sensitive to gate drive impedance; improper gate resistance can cause thermal instability or shoot-through in multi-FET configurations.
How is the mounting base (mb) terminal electrically connected internally?
The mounting base is internally bonded directly to the drain metallization and shares electrical potential with pins 7–12 (all labeled D). It is not isolated - therefore, the PCB thermal pad must be routed to the drain net and cannot serve as a separate ground or heatsink reference. This configuration maximizes thermal transfer while maintaining drain-centric current flow.
Is PSMN1R0-100ASEJ suitable for automotive applications?
No - this device is not AEC-Q101 qualified and lacks automotive-specific stress testing, qualification reporting, or PPAP documentation. Nexperia explicitly states in the datasheet that non-automotive qualified products are unsuitable for safety-critical or life-support systems; use only in industrial, telecom, or enterprise power applications.
PSMN1R0-100ASEJ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 12-BESOP (0.370", 9.40mm Width), Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 430A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.04mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 509 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36460 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.55kW (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CCPAK1212
PSMN1R0-100ASEJ FAQ
1.How can I place an order for PSMN1R0-100ASEJ through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN1R0-100ASEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN1R0-100ASEJ reliable?
The price and inventory of PSMN1R0-100ASEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-100ASEJ is usually 5 days.
3.What payment methods are accepted for PSMN1R0-100ASEJ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-100ASEJ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN1R0-100ASEJ?
PSMN1R0-100ASEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN1R0-100ASEJ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN1R0-100ASEJ?
For technical support, including PSMN1R0-100ASEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-100ASEJ requirements.
6.How does Aetrix verify that PSMN1R0-100ASEJ is sourced from the original manufacturer or authorized distributors?
All PSMN1R0-100ASEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-100ASEJ meets industry standards.
7.What is the process for return or replacement of PSMN1R0-100ASEJ?
All PSMN1R0-100ASEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-100ASEJ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN1R0-100ASEJ part is unused and in its original packaging.
Return procedure for PSMN1R0-100ASEJ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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