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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGOT65R055D2AUMA1

Name: IGOT65R055D2AUMA1
Brand: Infineon Technologies
SKU: IGOT65R055D2AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGOT65R055D2AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 20-BFSOP (0.295", 7.50mm Width)

Datasheet:: IGOT65R055D2AUMA1.pdf

Description:: IGOT65R055D2AUMA1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IGOT65R055D2AUMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-DSO-20 package, featuring 55 mΩ typical R_DS(on), 4.7 nC gate charge, 35 nC output charge at 400 V, and 60 A pulsed drain current. It serves as a high-frequency switching device in hard- and soft-switching topologies including totem-pole PFC and LLC resonant converters.

For engineers reviewing the IGOT65R055D2AUMA1 datasheet, IGOT65R055D2AUMA1 pinout, IGOT65R055D2AUMA1 application, or IGOT65R055D2AUMA1 equivalent, key selection criteria include its 900 V transient voltage rating, zero reverse recovery charge, Kelvin source configuration for gate drive stability, and 2 kV HBM ESD robustness - all critical for high-efficiency, high-density SMPS design.

Technical Context

This CoolGaN™ G5 transistor employs normally-off GaN-on-Si technology with integrated Kelvin source (Pin 8) to minimize gate loop inductance and suppress dynamic R_DS(on) rise during fast switching. Its ultra-low Q_g (4.7 nC) and Q_oss (65 pF energy-related) enable sub-10 ns turn-on delay and 14 ns fall time under 7.9 A load with 5.6 Ω gate resistance.

The device supports bidirectional conduction without body diode reverse recovery, verified by Q_rr = 0 nC and V_SD = 2.4 V forward drop at 7.9 A. Thermal performance is anchored by 1.4 °C/W junction-to-case resistance and JEDEC industrial qualification up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - rated blocking voltage for primary-side switches in 400 V AC-input SMPS
R_DS(on),typ	55 mΩ - enables <1.5 W conduction loss at 7.9 A DC, supporting high-power-density designs
Q_g	4.7 nC - reduces gate driver power demand and allows use of low-current drivers (e.g., 1–2 A peak)
Q_oss (energy-related)	65 pF - defines stored energy (5.2 μJ at 400 V), directly impacting turn-off losses in hard-switched topologies
t_f	14 ns - enables >1 MHz switching in LLC while maintaining ZVS margin and minimizing dead-time losses
T_j,max	150 °C - validated for continuous operation in industrial ambient up to 85 °C with proper heatsinking
dv/dt immunity	200 V/ns - sustains reliable operation in high-dV/dt environments like totem-pole PFC without spurious turn-on

Pinout & Package

IGOT65R055D2AUMA1 uses the PG-DSO-20 surface-mount package with exposed thermal pad (heatslug) and integrated Kelvin source terminal for stable gate control.

Pin/Terminal	Circuit Role	Design Meaning
1–7, Heatslug	Source (Power)	Main current return path and thermal interface to PCB copper pour
8	Kelvin Source	Dedicated low-inductance reference for gate driver feedback, isolating power and sensing paths
9–10	Gate	Parallel gate inputs to reduce effective gate resistance and improve switching symmetry
13–18	Drain	High-current drain connection across six parallel pins to minimize bondwire inductance and resistive loss
11–12, 19–20	No Connect	Unused internal terminals; must remain unconnected per datasheet

Key Features

Feature	Design Value
Enhancement-mode GaN	Guarantees safe default-OFF behavior, eliminating need for active gate pull-down during power-up/fault
No reverse recovery charge (Q_rr = 0 nC)	Enables zero-voltage switching in bidirectional topologies without snubbers or body-diode loss penalties
2 kV HBM ESD rating	Supports robust handling and assembly in standard SMT lines without special ESD controls beyond Class 1C
Ultra-low Q_g/Q_oss ratio	Improves figure-of-merit (R_DS(on) × Q_g) by >3× vs. comparable Si MOSFETs, reducing total switching loss
JEDEC industrial qualification	Validated for 10-year lifetime at T_j = 125 °C, enabling long-term reliability in telecom/datacenter infrastructure

Applications

Server PSU Totem-Pole PFC

Datacenter LLC Resonant Converter

Use Scenario: High-efficiency 3.3 kW front-end rectifier using interleaved totem-pole topology with digital control.

IC Role / Device Role / Timing Role: Fast-switching high-side GaN switch operating at 100–200 kHz with synchronous rectification on low-side.

Use Value: Eliminates body-diode conduction loss and enables >99% efficiency at full load due to zero Q_rr and 55 mΩ R_DS(on).

Use Scenario: 1.5 kW isolated DC-DC stage in AI accelerator rack, requiring compact magnetics and minimal thermal footprint.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge LLC, switching at 700 kHz with ZVS over full load range.

Use Value: 14 ns fall time and 65 pF C_oss ensure tight ZVS window and reduce circulating current, cutting transformer size by 35%.

Industrial 48 V DC-DC Brick

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 600 W isolated flyback-derived converter for factory automation controllers with wide input (36–75 V).

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback, leveraging fast dv/dt immunity to maintain regulation at variable frequency.

Use Value: 200 V/ns dv/dt rating prevents false triggering during line transients, improving system uptime in noisy plant environments.

Use Scenario: 11 kW single-phase OBC with dual totem-pole PFC stages feeding a phase-shifted full-bridge DC-DC.

IC Role / Device Role / Timing Role: High-side switch in each PFC leg, operating at 120 kHz with active thermal management.

Use Value: 1.4 °C/W R_thJC enables direct mounting to cold plate, reducing heatsink mass by 40% vs. SiC alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
GaN Systems GS66508T	650 V, 50 mΩ R_DS(on), 6.2 nC Q_g, 80 pF C_oss, 8-pin PQFN package	Lacks Kelvin source; requires careful gate layout to mitigate common-source inductance	Preferred where board space is constrained and gate drive layout can be tightly controlled
Transphorm TPH3205WS	650 V, 55 mΩ R_DS(on), 5.3 nC Q_g, 70 pF C_oss, TO-247-4L package	Through-hole mounting; higher thermal resistance (0.5 °C/W R_thJC but larger case)	Chosen when mechanical robustness and field-replaceability outweigh density requirements

Compared with GS66508T and TPH3205WS, IGOT65R055D2AUMA1 delivers superior gate drive stability via Kelvin source, lower Q_oss-related turn-off loss, and tighter production tolerances from 200 mm wafer processing - making it optimal for volume-manufactured, thermally constrained server and telecom PSUs.

Availability

IGOT65R055D2AUMA1 is available at Aetrix Electronics and suitable for server power supplies, datacenter DC-DC converters, and industrial 48 V brick modules requiring stable component supply, JEDEC-qualified reliability, and high-frequency GaN performance.

Supply support for IGOT65R055D2AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

This part belongs to the CoolGaN™ G5 product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in datacenter, telecom, and industrial infrastructure - emphasizing low-loss switching, thermal robustness, and production scalability.

FAQ

What gate drive voltage is required for reliable operation?

IGOT65R055D2AUMA1 requires a nominal gate-source voltage of +6 V to +7.9 V for full enhancement, with absolute maximum ratings of –10 V to +10 V continuous and –25 V to +25 V pulsed. Driving at 6.5 V ensures robust noise margin while avoiding excessive gate oxide stress. The device's 0.9–1.6 V threshold range guarantees turn-on only within this controlled window.

Does this GaN transistor require a negative gate voltage for turn-off?

No. The device operates reliably with 0 V gate turn-off due to its enhancement-mode structure and low gate threshold hysteresis. Negative gate bias is not required and may increase gate driver complexity unnecessarily. Infineon's recommended gate drive circuit uses a simple 0 V/6.5 V swing with Kelvin source feedback.

How is thermal performance affected by the PG-DSO-20 package's heatslug?

The exposed heatslug in the PG-DSO-20 package provides a direct thermal path from the die to the PCB, achieving 1.4 °C/W junction-to-case resistance. When mounted on a 6 cm² copper area (70 μm thick), it delivers 61 °C/W junction-to-ambient - significantly better than standard SO-8 packages - enabling >80 W continuous dissipation without external heatsinks in vertical airflow-limited enclosures.

Can IGOT65R055D2AUMA1 replace silicon MOSFETs in existing designs without layout changes?

Direct replacement is not recommended without gate drive and layout review. While pin-compatible with some SO-20 variants, its Kelvin source (Pin 8), dual gate inputs (Pins 9–10), and multi-pin drain (13–18) require dedicated routing. Critical updates include separating Kelvin source from power source traces and minimizing gate loop inductance - otherwise, dynamic R_DS(on) overshoot and oscillation may occur.

IGOT65R055D2AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 20-BFSOP (0.295", 7.50mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: 4.7 nC @ 3 V

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-20-91

IGOT65R055D2AUMA1 FAQ

1.How can I place an order for IGOT65R055D2AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGOT65R055D2AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGOT65R055D2AUMA1 reliable?

The price and inventory of IGOT65R055D2AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGOT65R055D2AUMA1 is usually 5 days.

3.What payment methods are accepted for IGOT65R055D2AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGOT65R055D2AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGOT65R055D2AUMA1?

IGOT65R055D2AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGOT65R055D2AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGOT65R055D2AUMA1?

For technical support, including IGOT65R055D2AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGOT65R055D2AUMA1 requirements.

6.How does Aetrix verify that IGOT65R055D2AUMA1 is sourced from the original manufacturer or authorized distributors?

All IGOT65R055D2AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGOT65R055D2AUMA1 meets industry standards.

7.What is the process for return or replacement of IGOT65R055D2AUMA1?

All IGOT65R055D2AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGOT65R055D2AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGOT65R055D2AUMA1 part is unused and in its original packaging.

Return procedure for IGOT65R055D2AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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