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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R0-100ASFJ

Name: PSMN1R0-100ASFJ
Brand: Nexperia USA Inc.
SKU: PSMN1R0-100ASFJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R0-100ASFJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMN1R0-100ASFJ.pdf

Description:: PSMN1R0-100ASF/SOT8000A/CCPAK1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN1R0-100ASF from Nexperia is a 100 V, 0.99 mΩ N-channel MOSFET in the CCPAK1212 (SOT8000A) copper-clip package, rated for 460 A continuous drain current at T_mb = 25 °C and qualified to 175 °C junction temperature. It delivers low Q_G × R_DS(on) figure-of-merit (359 nC × 0.99 mΩ), strong avalanche ruggedness (1630 mJ), and low reverse recovery charge (99 nC), enabling high-efficiency switching in high-power industrial motor drives and battery protection circuits.

For engineers reviewing the PSMN1R0-100ASF datasheet, PSMN1R0-100ASF pinout, PSMN1R0-100ASF application, or PSMN1R0-100ASF equivalent, key selection criteria include its 12-terminal drain-source-gate terminal layout, thermal resistance of 0.075 K/W (junction-to-mounting-base), and JEDEC-qualified CCPAK1212 footprint compatibility for second-source design flexibility.

Technical Context

This NextPower MOSFET employs a trench-gated superjunction structure optimized for low conduction and switching losses in hard-switched topologies. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V at 25 °C, with a typical plateau voltage of 4.3 V, supporting standard-level 10 V gate drive while maintaining robust noise immunity.

The device integrates an avalanche-rated body diode with 99 nC recovered charge and 75 ns reverse recovery time under defined test conditions, enabling reliable operation in OR-ing and half-bridge freewheeling paths without external snubbing. Its mounting-base-connected drain terminals provide direct thermal path to heatsinks, validated by transient impedance curves up to 100 ms pulse duration.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V–72 V bus systems with 30 % safety margin
R_DS(on)	0.99 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1 W conduction loss at 32 A RMS in BLDC phase leg
I_D	460 A continuous @ T_mb = 25 °C - Validated current rating limited by PCB copper area and thermal interface, not silicon
Q_G(tot)	359 nC typ - Low gate charge supports >100 kHz switching with moderate gate driver power (e.g., 1.8 W @ 100 kHz, 10 V swing)
E_AS	1630 mJ - Non-repetitive avalanche energy rating verified 100 % per unit, critical for inductive load turn-off stress
R_th(j-mb)	0.075 K/W typ - Junction-to-mounting-base thermal resistance enables >1.5 kW dissipation with 15 K ΔT to heatsink
Q_r	99 nC - Low diode recovered charge reduces voltage overshoot and EMI in synchronous rectification and OR-ing

Pinout & Package

PSMN1R0-100ASF uses the CCPAK1212 (SOT8000A) surface-mount copper-clip package: 12 mm × 12 mm × 2.5 mm body, 13 terminals (12 signal + 1 exposed thermal pad), 2.0 mm pitch, JEDEC-registered for open-market compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1	G	Gate input - Single low-inductance connection point for gate driver return path optimization
2–6	S	Source - Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
7–12	D	Drain - Six dedicated drain terminals plus mounting base provide ultra-low inductance and high-current drain routing
mb	D (mounting base)	Drain-connected thermal pad - Exposed copper base directly bonded to heatsink, contributing >90 % of total heat transfer

Key Features

Feature	Design Value
Low Q_rr (99 nC)	Reduces diode-induced voltage spikes and EMI in hard-commutated half-bridges and OR-ing configurations
JEDEC-qualified CCPAK1212	Ensures mechanical and thermal interoperability across second-source suppliers and PCB assembly lines
100 % avalanche tested	Guarantees single-pulse ruggedness up to 1630 mJ without derating, eliminating need for overvoltage clamping
0.075 K/W R_th(j-mb)	Enables compact thermal design: 1.55 kW power dissipation achievable with ≤15 K temperature rise to heatsink
460 A continuous rating	Validated current capacity supports high-power BLDC inverters (e.g., 15 kW @ 48 V) with minimal paralleling

Applications

Battery Protection

High-Power Half-Bridge

Use Scenario: High-current e-bike or UPS battery disconnect during overcurrent or short-circuit events.

IC Role / Device Role / Timing Role: Primary power switch in active protection FET stack, operating in linear or saturated mode during fault interruption.

Use Value: 1630 mJ avalanche rating absorbs inductive kickback from battery cables without failure; 0.99 mΩ R_DS(on) limits voltage drop to <15 mV at 15 A standby current.

Use Scenario: Upper and lower switches in 5–15 kW BLDC motor inverter for industrial pumps or EV traction.

IC Role / Device Role / Timing Role: Main switching element in hard-switched half-bridge topology, handling 400+ A peak phase currents at 20–50 kHz.

Use Value: Low Q_G × R_DS(on) (359 nC × 0.99 mΩ) minimizes combined conduction/switching loss; five-source terminals suppress common-source inductance-induced shoot-through risk.

OR-ing Circuit

Full-Bridge DC-DC Converter

Use Scenario: Redundant 48 V power supply combining in telecom rectifier systems or server PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and improve efficiency.

Use Value: 99 nC Q_r and 75 ns t_rr enable clean commutation with minimal reverse recovery loss; drain-connected mounting base simplifies heatsinking in dense board layouts.

Use Scenario: Primary-side switches in isolated 3–6 kW LLC or phase-shifted full-bridge DC-DC converters for data center PSUs.

IC Role / Device Role / Timing Role: High-side and low-side switching transistor handling 100 V bus with 3296 A pulsed current capability.

Use Value: 3296 A I_DM peak rating supports surge currents during startup or overload; 175 °C T_j rating ensures reliability under sustained high-temperature operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP020N10N5	100 V, 2.0 mΩ R_DS(on), TO-220FP package, 120 A I_D rating	Limited to medium-power (<2 kW) due to higher R_DS(on) and inferior thermal resistance (0.55 K/W)	Choose only if legacy through-hole assembly or lower-cost qualification is required; not suitable for >300 A designs
STMicroelectronics STW70N10F7	100 V, 1.2 mΩ R_DS(on), H2PAK-7 package, 130 A I_D rating, no avalanche testing	Lower current capability and untested avalanche performance restrict use in safety-critical battery protection	Select when footprint compatibility with H2PAK-7 is mandatory; verify system-level avalanche robustness via testing

Compared with IPP020N10N5 and STW70N10F7, PSMN1R0-100ASF provides 2.5× higher continuous current, 7× lower thermal resistance, and guaranteed avalanche ruggedness-making it uniquely suited for industrial-grade 10+ kW switching where thermal density and fault tolerance are non-negotiable.

Availability

PSMN1R0-100ASF is available at Aetrix Electronics and suitable for high-power BLDC motor control, battery protection systems, and OR-ing power supplies requiring stable component supply across multi-year production cycles.

Supply support for PSMN1R0-100ASF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

The NextPower product line targets high-efficiency power conversion in demanding industrial applications, emphasizing low R_DS(on), robust avalanche capability, and thermally optimized packaging for maximum power density.

FAQ

What is the maximum allowable mounting base temperature for continuous operation?

The datasheet specifies a maximum junction temperature of 175 °C and defines continuous current ratings at mounting base temperatures up to 100 °C. At T_mb = 100 °C, the device sustains 460 A (same as at 25 °C), confirmed by Fig. 2. Thermal design must ensure T_j ≤ 175 °C under worst-case ambient and power dissipation, using R_th(j-mb) = 0.075 K/W as the primary thermal path.

Does PSMN1R0-100ASF require gate resistors for safe switching?

Yes-gate resistance controls dV/dt and di/dt during turn-on/turn-off. With Q_G(tot) = 359 nC and typical gate driver output impedance, a 5 Ω external resistor (as used in Fig. 13 test setup) limits peak gate current to ~2 A and achieves measured t_f = 129 ns. Lower values increase switching speed but risk oscillation; higher values reduce EMI but raise switching losses.

Can this MOSFET be used in parallel configurations?

Yes-the CCPAK1212 package's symmetrical multi-terminal layout (5 source, 6 drain pins) and positive R_DS(on) temperature coefficient (Fig. 12) support stable current sharing. Parallel operation requires matched gate drive loop inductance, identical PCB copper weight/length, and thermal coupling between devices to maintain <10 °C inter-device ΔT for optimal balance.

Is the mounting base electrically isolated from the drain terminals?

No-the mounting base (mb) is internally connected to the drain, as explicitly stated in Table 2 ("mb D mounting base; connected to drain") and confirmed in the simplified outline graphic. This requires electrical isolation between the heatsink and all other circuit nodes unless the drain node is at chassis ground potential.

PSMN1R0-100ASFJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 460A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 0.99mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 539 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 33624 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.55kW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212

PSMN1R0-100ASFJ FAQ

1.How can I place an order for PSMN1R0-100ASFJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R0-100ASFJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R0-100ASFJ reliable?

The price and inventory of PSMN1R0-100ASFJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-100ASFJ is usually 5 days.

3.What payment methods are accepted for PSMN1R0-100ASFJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-100ASFJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R0-100ASFJ?

PSMN1R0-100ASFJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R0-100ASFJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R0-100ASFJ?

For technical support, including PSMN1R0-100ASFJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-100ASFJ requirements.

6.How does Aetrix verify that PSMN1R0-100ASFJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R0-100ASFJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-100ASFJ meets industry standards.

7.What is the process for return or replacement of PSMN1R0-100ASFJ?

All PSMN1R0-100ASFJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-100ASFJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R0-100ASFJ part is unused and in its original packaging.

Return procedure for PSMN1R0-100ASFJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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