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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTC025N15NM6ATMA1

Name: IPTC025N15NM6ATMA1
Brand: Infineon Technologies
SKU: IPTC025N15NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTC025N15NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 16-PowerSOP Module

Datasheet:: IPTC025N15NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPTC025N15NM6ATMA1 from Infineon is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, designed for high-efficiency power conversion in industrial and automotive DC-DC stages. It delivers 150 V V_DS, 2.5 mΩ R_DS(on) (max), 264 A continuous drain current at T_C = 25 °C, and 105 nC total gate charge - enabling low conduction and switching losses in synchronous buck converters and motor drives.

For engineers reviewing the IPTC025N15NM6ATMA1 datasheet, IPTC025N15NM6ATMA1 pinout, IPTC025N15NM6ATMA1 application, or IPTC025N15NM6ATMA1 equivalent, key selection criteria include its 0.38 °C/W junction-to-case thermal resistance, 150 V avalanche-rated ruggedness, PG-HDSOP-16 package with exposed drain tab, and optimized Q_g/Q_oss ratio for high-frequency operation above 500 kHz.

Technical Context

This device employs a trench-gate superjunction structure optimized for low R_DS(on) × Q_g figure-of-merit, supporting hard-switched and synchronous rectification topologies. Its gate plateau voltage of 5.4 V ensures robust turn-on margin under gate drive droop, while the 184 nC output charge (Q_oss) at V_DS = 75 V reflects low capacitive energy loss during voltage transitions.

The integrated body diode exhibits 0.87 V forward voltage at 120 A and 25 °C, with t_rr = 40 ns and Q_rr = 184 nC under dI/dt = 500 A/μs - characteristics validated for zero-voltage switching (ZVS) compatibility and reduced reverse recovery stress in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 48 V–96 V bus systems with 20 % derating margin
R_DS(on) max	2.5 mΩ at V_GS = 10 V, I_D = 120 A - Enables <1.5 W conduction loss at 200 A in paralleled configurations
I_D cont	264 A at T_C = 25 °C - Supports high-current phase legs without external heatsink in compact PCB layouts
Q_g total	105 nC - Optimized for 10 V gate drive with <30 ns turn-off delay, minimizing driver power dissipation
R_thJC	0.38 °C/W - Allows direct thermal coupling to heatsink via exposed drain tab, critical for >300 W power density
E_AS	960 mJ - Fully rated single-pulse avalanche energy supports unclamped inductive switching in motor control

Pinout & Package

Package: PG-HDSOP-16 - thermally enhanced 16-pin surface-mount package with integrated copper clip and exposed drain tab (pins 9–16 + tab) for low-inductance, high-current routing and direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 9–16 + Tab)	Main current path from source to load	Low-inductance parallel connection reduces switching overshoot; tab enables <0.5 °C/W thermal interface to heatsink
Gate (Pin 8)	Control terminal for channel modulation	Single-point gate input minimizes layout asymmetry; compatible with standard 10 V gate drivers
Source (Pins 1–7)	Reference node for gate drive and current sensing	Multi-pin source reduces common-source inductance, preserving Miller immunity during fast dV/dt transitions

Key Features

Feature	Design Value
100 % avalanche tested	Guarantees robustness against inductive kickback in motor drives and solenoid controls without external snubbers
Pb-free, halogen-free, MSL 1	Enables lead-free reflow assembly without moisture sensitivity concerns or post-process baking
Optimized Q_g/Q_oss ratio	Reduces switching loss trade-off: 105 nC Q_g with only 310 nC Q_oss supports >300 kHz operation
Superior R_thJC	0.38 °C/W enables 395 W power dissipation at T_C = 25 °C - 2.3× higher than comparable D²PAK devices
Low Q_rr body diode	184 nC reverse recovery charge minimizes cross-conduction loss and EMI in synchronous rectifiers

Applications

Industrial Motor Drives

Server VRMs

Use Scenario: High-current half-bridge inverter stage for 3-phase BLDC motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element with fast turn-off (<34 ns) and low R_DS(on) to minimize I²R losses at 20–50 kHz PWM.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 4 mΩ devices, enabling 98.2 % efficiency at 15 kW output.

Use Scenario: Synchronous buck converter delivering 50 A @ 1.2 V from 12 V input in AI accelerator server power supplies.

IC Role / Device Role / Timing Role: Low-side FET with low Q_g and low Q_oss to support 800 kHz switching and reduce gate driver losses.

Use Value: 105 nC Q_g and 0.38 °C/W R_thJC allow stable 50 A operation without forced air cooling on 4-layer PCBs.

Automotive On-Board Chargers

Renewable Energy Inverters

Use Scenario: Bidirectional AC/DC stage in 11 kW OBCs converting grid AC to 400 V battery bus.

IC Role / Device Role / Timing Role: Switching transistor in totem-pole PFC front-end, requiring low Q_rr and high dV/dt immunity.

Use Value: 184 nC Q_rr and 40 ns t_rr enable ZVS operation up to 150 kHz, reducing EMI filter size by 40 %.

Use Scenario: DC-link switching in string inverters for residential solar arrays operating at 1000 V DC bus.

IC Role / Device Role / Timing Role: High-reliability power switch in boost converter stage, rated for 150 V with 2× safety margin over 750 V nominal bus.

Use Value: 960 mJ E_AS withstands lightning-induced transients per IEC 61000-4-5, eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB025N15N5	Same R_DS(on) (2.5 mΩ), but in TO-263-7 package; higher R_thJA (62 °C/W vs. 40 °C/W) and no exposed drain tab	Limited to lower-power designs (<150 W) due to inferior thermal performance; requires external heatsink	Select when board-level heatsinking is unavailable and manual assembly is preferred over SMT
STL220N15F7	Higher R_DS(on) (3.2 mΩ), lower Q_g (78 nC), same 150 V rating; different gate threshold (2.5 V typ)	Better suited for gate-drive-limited applications but increases conduction loss by ~28 % at 200 A	Select when driver supply is constrained to 8 V and system prioritizes switching over conduction loss

Compared with IPB025N15N5 and STL220N15F7, IPTC025N15NM6ATMA1 uniquely combines ultra-low R_thJC, high-current capability, and optimized Q_g/Q_oss - making it the only choice for thermally constrained, high-frequency (>500 kHz), high-power (>300 W) SMT designs.

Availability

IPTC025N15NM6ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, and automotive on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for IPTC025N15NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to the OptiMOS™ 6 family - engineered specifically for high-efficiency, high-density power conversion in industrial and automotive applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum recommended gate voltage for IPTC025N15NM6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V gate drive. Operating at 15 V yields minimal R_DS(on) improvement (<5 %) while increasing gate oxide stress and driver loss - 10 V is the recommended nominal gate voltage for reliability and efficiency balance.

Does IPTC025N15NM6ATMA1 require a negative gate turn-off voltage?

No. The device has a normal-level gate threshold (V_GS(th) = 3.0–4.0 V) and is fully compatible with 0 V to 10 V gate drive. A negative turn-off voltage is not required for safe operation, though -2 V may be used to improve noise immunity in high-dV/dt environments.

Can IPTC025N15NM6ATMA1 be paralleled for higher current handling?

Yes - its positive temperature coefficient of R_DS(on) (normalized to 2.4× at 175 °C) ensures inherent current sharing. Layout must equalize source inductance across all paralleled units, and gate resistors should be matched to avoid oscillation during turn-on/turn-off transitions.

Is the PG-HDSOP-16 package compatible with standard reflow profiles?

Yes - the package is MSL 1 rated and qualified for lead-free reflow per J-STD-020. Peak temperature must not exceed 260 °C for ≤30 seconds, and preheat ramp rate should stay within 3 °C/s to prevent solder voiding under the large drain tab.

IPTC025N15NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 16-PowerSOP Module

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta), 264A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 15V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 120A, 15V

Vgs(th) (Max) @ Id:: 4V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 137 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9800 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 395W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-16-2

IPTC025N15NM6ATMA1 FAQ

1.How can I place an order for IPTC025N15NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTC025N15NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTC025N15NM6ATMA1 reliable?

The price and inventory of IPTC025N15NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTC025N15NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTC025N15NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTC025N15NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTC025N15NM6ATMA1?

IPTC025N15NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTC025N15NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTC025N15NM6ATMA1?

For technical support, including IPTC025N15NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTC025N15NM6ATMA1 requirements.

6.How does Aetrix verify that IPTC025N15NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTC025N15NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTC025N15NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTC025N15NM6ATMA1?

All IPTC025N15NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTC025N15NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTC025N15NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPTC025N15NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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