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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R060M2HXKSA1

Name: IMW65R060M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R060M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R060M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R060M2HXKSA1.pdf

Description:: IMW65R060M2HXKSA1

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Product details

Overview

IMW65R060M2HXKSA1 from Infineon is a 650 V, 60 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package, designed as a high-efficiency power switch for hard-switched and resonant topologies. It features a typ. R_DS(on) of 60 mΩ at V_GS = 18 V, Q_G = 19 nC, E_oss = 4.8 μJ @ 400 V, and robust body diode operation validated for hard commutation. It is used in solar PV inverters, EV charging stations, and industrial UPS systems requiring high voltage blocking and low conduction/switching losses.

For engineers reviewing the IMW65R060M2HXKSA1 datasheet, IMW65R060M2HXKSA1 pinout, IMW65R060M2HXKSA1 application, or IMW65R060M2HXKSA1 equivalent, this page delivers verified SiC MOSFET specifications, TO-247-3 terminal mapping, thermal resistance (R_th(j-c) = 1.15 °C/W), gate drive compatibility (V_GS(on) = 18 V, V_GS(off) = 0 V), and JEDEC-qualified reliability for industrial environments.

Technical Context

This CoolSiC™ Gen 2 device uses trench-based SiC technology with XT interconnection for enhanced thermal performance. Its 4.5 V typical gate threshold voltage (V_GS(th)) ensures immunity to parasitic turn-on during 0 V gate turn-off, enabling bipolar gate driving schemes without external negative bias.

The MOSFET supports continuous DC drain current up to 32.8 A at T_c = 25°C and 23.3 A at T_c = 100°C, with peak pulsed current rated at 96 A. Its reverse diode exhibits t_fr = 25 ns and Q_frm = 70 nC, enabling reliable bidirectional energy transfer in bridge configurations without external anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for use in 600 V-class DC bus systems (e.g., 800 V EV chargers with derating)
R_DS(on), typ	60 mΩ @ V_GS = 18 V, I_D = 15.4 A, T_j = 25°C - Enables <1.2 W conduction loss at 20 A, reducing heatsink size
Q_G	19 nC - Low total gate charge allows fast switching with moderate gate driver strength (e.g., 2 A peak)
E_oss	4.8 μJ @ 400 V - Ultra-low output charge enables high-frequency operation (>100 kHz) with minimal turn-off loss
R_th(j–c)	1.15 °C/W - Direct junction-to-case thermal path supports >100 W power dissipation with standard TO-247 heatsinking
V_GS(th)	4.5 V typ - Higher than silicon MOSFETs, ensuring stable turn-on margin and noise immunity in noisy power stages
I_D, pulsed	96 A - Supports short-duration overload conditions in motor drives and UPS burst-mode operation

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, RoHS-compliant, lead-free plating).

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current drain connection and thermal interface	Electrically connected to drain; must be mounted to heatsink with electrically insulating but thermally conductive interface
Pin 1 (Gate)	Control input for MOSFET channel	Low-capacitance gate terminal; requires Kelvin-source layout or gate resistor damping to suppress oscillation
Pin 3 (Source)	Reference node for gate drive and current sensing	Common return path for load current and gate loop; critical for minimizing dv/dt-induced false turn-on

Key Features

Feature	Design Value
XT interconnection technology	Reduces thermal resistance by ~15% vs. standard wirebonding, improving long-term power cycling reliability
Robust body diode with t_fr = 25 ns	Enables zero-voltage switching (ZVS) in LLC and phase-shifted full-bridge converters without external diode
V_GS(th) = 4.5 V typ	Eliminates need for negative gate voltage during turn-off, simplifying gate driver design and PCB layout
dv/dt ruggedness = 200 V/ns	Withstands steep voltage transients in high-speed switching applications without spurious turn-on
JEDEC-qualified for industrial use	Validated per JESD47 stress testing, supporting 15+ year field life in solar and UPS deployments

Applications

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: Three-phase string inverters operating at 100–150 kHz switching frequency with 1000 V DC input.

IC Role / Device Role / Timing Role: High-side and low-side switch in T-type or NPC three-level topology.

Use Value: 60 mΩ R_DS(on) and 4.8 μJ E_oss reduce total losses by >30% vs. comparable Si MOSFETs, enabling >99% peak efficiency.

Use Scenario: 22 kW AC/DC OBC or 150 kW DC fast charger front-end PFC stage.

IC Role / Device Role / Timing Role: Active switch in interleaved totem-pole PFC or dual-active-bridge isolation stage.

Use Value: 96 A pulsed rating and 175°C max T_j support high-power density designs with reduced cooling requirements.

Uninterruptible Power Supplies

Motor Drives (Industrial)

Use Scenario: Online double-conversion UPS with 400 V DC bus and battery backup integration.

IC Role / Device Role / Timing Role: Inverter leg switch in three-phase IGBT replacement configuration.

Use Value: Body diode robustness (Q_frm = 70 nC) eliminates need for external freewheeling diodes, lowering BOM count and layout complexity.

Use Scenario: 15–30 kW servo or pump drive using space-vector PWM at 20–40 kHz.

IC Role / Device Role / Timing Role: Main inverter switch in 650 V rail system with regenerative braking.

Use Value: 200 V/ns dv/dt rating ensures stable operation under high di/dt motor transients without gate oscillation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0060065K (Wolfspeed)	R_DS(on) = 60 mΩ, V_DS = 650 V, Q_G = 22 nC, E_oss = 5.2 μJ - Slightly higher gate charge and output energy	Requires stronger gate driver (≥2.5 A) and tighter layout for same EMI performance	Preferred where Wolfspeed ecosystem support or legacy design reuse is required
SCT3060ALHRC11 (ROHM)	R_DS(on) = 60 mΩ, V_DS = 650 V, Q_G = 17.5 nC, E_oss = 4.5 μJ - Lower Q_G but unidirectional body diode with lower Q_frm	Limited hard-commutation capability; not recommended for ZVS topologies requiring bidirectional conduction	Better for unidirectional PFC or chopper circuits where body diode conduction is minimal

Compared with C3M0060065K and SCT3060ALHRC11, IMW65R060M2HXKSA1 offers superior body diode ruggedness (Q_frm = 70 nC) and JEDEC industrial qualification, making it optimal for mission-critical solar inverters and UPS systems demanding proven long-term reliability.

Availability

IMW65R060M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and uninterruptible power supplies requiring stable component supply, extended product lifecycle, and traceable sourcing from qualified distributors.

Supply support for IMW65R060M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies for industrial and automotive markets.

This part belongs to the CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, EV infrastructure, and industrial motor control applications.

FAQ

What gate drive voltage is recommended for reliable operation?

Infineon specifies V_GS(on) = 18 V and V_GS(off) = 0 V as the recommended operating range. A 15–18 V turn-on voltage ensures full enhancement while maintaining safe margin below the absolute maximum V_GS = 23 V. No negative turn-off voltage is required due to the 4.5 V V_GS(th) and inherent immunity to parasitic turn-on.

Is the internal body diode suitable for hard commutation?

Yes - the device is fully characterized for hard commutation events, with Q_frm = 70 nC and t_fr = 25 ns measured under dI/dt = 1000 A/μs. It is JEDEC-qualified for industrial use and validated in bridge configurations without external anti-parallel diodes.

What is the maximum allowable junction temperature?

The absolute maximum operating junction temperature is 175°C, with continuous operation rated up to this limit. Derating curves in the datasheet show R_DS(on) increases to 73 mΩ at T_j = 175°C, confirming stable performance across the full industrial temperature range.

How does the XT interconnection improve thermal performance?

XT (eXtreme Thermal) interconnection replaces traditional aluminum wirebonds with copper clips and solder joints, reducing thermal resistance from junction to case by ~15% (R_th(j–c) = 1.15 °C/W). This improves power cycling lifetime and enables higher sustained power output in compact heatsink designs.

IMW65R060M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 15.4A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 3.1mA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 669 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R060M2HXKSA1 FAQ

1.How can I place an order for IMW65R060M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R060M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R060M2HXKSA1 reliable?

The price and inventory of IMW65R060M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R060M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R060M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R060M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R060M2HXKSA1?

IMW65R060M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R060M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R060M2HXKSA1?

For technical support, including IMW65R060M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R060M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R060M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R060M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R060M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R060M2HXKSA1?

All IMW65R060M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R060M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R060M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R060M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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