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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPT025N15NM6ATMA1

Name: IPT025N15NM6ATMA1
Brand: Infineon Technologies
SKU: IPT025N15NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPT025N15NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IPT025N15NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPT025N15NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in the OptiMOS™ 6 family, designed for high-efficiency power conversion in industrial DC-DC stages and motor drives. It delivers 150 V V_DS, 2.5 mΩ R_DS(on) (max), 263 A continuous drain current at T_C = 25 °C, and 0.38 °C/W thermal resistance (junction-to-case), enabling high-current switching with minimal conduction loss in compact 40 mm × 40 mm PCB layouts.

For engineers reviewing the IPT025N15NM6ATMA1 datasheet, IPT025N15NM6ATMA1 pinout, IPT025N15NM6ATMA1 application, or IPT025N15NM6ATMA1 equivalent, key selection criteria include its 150 V rating, sub-3 mΩ on-resistance at 10 V gate drive, 105 nC total gate charge, 310 nC output charge, and TOLL (PG-HSOF-8) package optimized for low-inductance, high-current PCB mounting.

Technical Context

This device employs a trench-gate superjunction structure optimized for fast switching with low Q_g/Q_oss ratio-105 nC total gate charge and 310 nC output charge at V_DD = 75 V-supporting high-frequency operation up to 500 kHz in synchronous buck converters. Its 184 nC reverse recovery charge (Q_rr) at dI/dt = 500 A/μs enables robust body diode commutation in hard-switched topologies.

The MOSFET is fully qualified per JEDEC JESD47 for industrial applications, features 100% unclamped inductive switching (UIS) testing, and uses Pb-free, halogen-free plating compliant with IEC61249-2-21 and MSL 1 per J-STD-020-ensuring reliability under sustained thermal cycling and reflow conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 48 V–72 V bus systems with 2× safety margin
R_DS(on) max	2.5 mΩ at V_GS = 10 V, I_D = 120 A - Enables <1.5 W conduction loss at 250 A peak in high-current motor phases
I_D cont	263 A at T_C = 25 °C - Supports >20 kW continuous power in liquid-cooled inverters
Q_g total	105 nC - Requires ~1.05 A average gate drive current at 10 MHz switching frequency
R_thJC	0.38 °C/W - Allows junction temperature rise of ≤38 °C at 100 W dissipation with direct heatsink mounting
Q_oss	310 nC - Limits turn-off energy loss to ~23 mJ at 75 V, critical for ZVS soft-switching design
t_r/t_f	16 ns / 19 ns - Enables clean edge control with <10 ns gate driver propagation skew tolerance

Pinout & Package

Package: PG-HSOF-8 (TOLL), surface-mount, thermally enhanced with exposed drain tab for direct heatsink attachment. Dimensions: 9.1 mm × 8.1 mm × 1.3 mm. Optimized for low parasitic inductance and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection	Exposed copper pad carrying full load current; must be soldered to ≥6 cm² internal/external copper for thermal and current handling
Gate (Pin 1)	Control input	Low-impedance gate terminal requiring Kelvin-source referenced drive to minimize Miller-induced shoot-through risk
Source (Pins 2–8)	Power return path	Multi-pin source configuration reduces bond-wire inductance and improves current sharing across parallel dies

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.5 mΩ max at 10 V - Reduces conduction losses by 35% vs. prior-gen 150 V OptiMOS™ devices
Optimized Q_g/Q_oss ratio	105 nC / 310 nC - Balances switching speed and EMI in 100–300 kHz industrial SMPS
100% UIS tested	120 A single-pulse avalanche current - Guarantees ruggedness during overcurrent fault events without derating
TOLL package thermal performance	0.38 °C/W R_thJC - Enables 395 W power dissipation at T_C = 25 °C, eliminating need for external heatsinks in many designs
Halogen-free & RoHS-compliant	IEC61249-2-21 compliant plating - Meets strict environmental requirements for industrial and medical equipment

Applications

Industrial Motor Drives

Server & Telecom DC-DC Converters

Use Scenario: Three-phase inverter stage in 15–30 kW servo drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side power switch in 6-pack half-bridge configuration, handling 200–250 A peak phase current.

Use Value: 2.5 mΩ R_DS(on) and 0.38 °C/W R_thJC enable >99.1% efficiency at full load while maintaining T_j < 125 °C without forced air cooling.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V intermediate bus converter for AI accelerator racks.

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck converter delivering 600 A at 12 V with 500 kHz switching.

Use Value: 105 nC Q_g and 184 nC Q_rr allow precise dead-time control and <0.5% cross-conduction loss at 600 A peak.

Renewable Energy Inverters

EV Onboard Chargers (OBC)

Use Scenario: DC-link switching stage in 11 kW three-phase grid-tied solar inverter with SiC hybrid topology.

IC Role / Device Role / Timing Role: Silicon complement to SiC boost stage, handling bidirectional 150 A RMS current in LLC resonant tank interface.

Use Value: 310 nC Q_oss ensures predictable turn-off timing and <2% voltage overshoot during zero-voltage switching transitions.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW AC-DC OBC using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-current freewheeling switch conducting 300 A peak during transformer reset intervals.

Use Value: 263 A I_D rating and 100% UIS qualification prevent failure during transient short-circuit events in automotive 12 V rail protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB025N15N5	Same R_DS(on) (2.5 mΩ), but TO-263-7 package; higher R_thJA (40 °C/W vs. 0.38 °C/W)	Requires larger heatsink footprint; unsuitable for ultra-dense PCB layouts	Select when legacy TO-263 assembly infrastructure exists and thermal budget allows ≥2× board area
STL220N15F7	Higher R_DS(on) (3.0 mΩ), lower Q_g (85 nC); same TOLL package	Better switching efficiency below 200 kHz but 20% higher conduction loss at >150 A	Select for cost-sensitive 100–150 kHz applications where peak current stays <180 A

Compared with IPB025N15N5 and STL220N15F7, IPT025N15NM6ATMA1 uniquely combines TOLL-package thermal superiority (0.38 °C/W), lowest R_DS(on), and industry-leading Q_g/Q_oss balance-making it optimal for space-constrained, high-power-density industrial and EV charging systems demanding both conduction and switching efficiency.

Availability

IPT025N15NM6ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPT025N15NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™ 6 family-designed specifically for high-efficiency, high-current power conversion in industrial automation, data center power supplies, and electric vehicle subsystems where thermal density and switching fidelity are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies T_C = 175 °C as the absolute maximum case temperature. For reliable continuous operation at rated current, Infineon recommends limiting T_C to ≤125 °C to maintain long-term parametric stability and avoid accelerated wear-out mechanisms. Derating curves in Diagram 2 show I_D drops to 173 A at T_C = 100 °C and 186 A at T_C = 100 °C under different test conditions.

Is this MOSFET suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes-its 2.5 mΩ R_DS(on), 105 nC Q_g, and 310 nC Q_oss make it ideal for high-current synchronous rectification. At 600 A output, conduction loss remains <1.8 W, and the low Q_g/Q_oss ratio supports clean turn-on/turn-off control even with standard gate drivers like the 1EDN7512B.

Does the device include integrated gate protection?

No integrated gate protection is included. The gate oxide is rated for ±20 V V_GS, and external gate resistors (R_G ≥ 2.2 Ω) and TVS clamps are required to limit dv/dt-induced Miller turn-on and suppress >20 V transients. Layout best practices mandate Kelvin-source routing to decouple power and signal ground paths.

How does the body diode performance compare to discrete Schottky alternatives?

The body diode has V_SD = 0.86 V (typ) at 120 A and t_rr = 40 ns (typ) at dI/dt = 500 A/μs-superior to most discrete 150 V Schottkys in reverse recovery robustness but with higher forward drop. It eliminates external diode count in half-bridge configurations, though discrete Schottkys remain preferred for <100 V, ultra-low-V_F applications.

IPT025N15NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 6

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Ta), 263A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 15V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 120A, 15V

Vgs(th) (Max) @ Id:: 4V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 137 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9800 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 395W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-1

IPT025N15NM6ATMA1 FAQ

1.How can I place an order for IPT025N15NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPT025N15NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPT025N15NM6ATMA1 reliable?

The price and inventory of IPT025N15NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPT025N15NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPT025N15NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPT025N15NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPT025N15NM6ATMA1?

IPT025N15NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPT025N15NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPT025N15NM6ATMA1?

For technical support, including IPT025N15NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPT025N15NM6ATMA1 requirements.

6.How does Aetrix verify that IPT025N15NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPT025N15NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPT025N15NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPT025N15NM6ATMA1?

All IPT025N15NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPT025N15NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPT025N15NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPT025N15NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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