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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIDC53D120H8X1SA1DIODE GP 1.2KV 100A WAFER Infineon Technologies |
5,436 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 100A | 1.97 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
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|
SIDC46D170HX1SA2DIODE GP 1.7KV 75A WAFER Infineon Technologies |
7,920 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 75A | 1.8 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
IDY10S120XKSA1DIODE SIC 1.2KV 5A TO247HC-3 Infineon Technologies |
7,422 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-247-3 Variant | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 1200 V | 250pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247HC-3 | -55°C ~ 175°C |
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|
IDC15S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
5,095 | 0.00 |
|
- |
- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
|
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SIDC59D170HX1SA2DIODE GP 1.7KV 100A WAFER Infineon Technologies |
3,772 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 100A | 1.8 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
GATELEAD28134XPSA1DUMMY 57 Infineon Technologies |
3,463 | 0.00 |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IDC73D120T6MX1SA2DIODE GP 1.2KV 150A WAFER Infineon Technologies |
2,069 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 150A | 2.05 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 26 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
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SIDC78D170HX1SA1DIODE GP 1.7KV 150A WAFER Infineon Technologies |
9,675 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 150A | 1.8 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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SIDC85D170HX1SA2DIODE GP 1.7KV 150A WAFER Infineon Technologies |
6,274 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 150A | 1.8 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
|
|
IDY15S120XKSA1DIODE SIC 1.2KV 7.5A TO247HC-3 Infineon Technologies |
6,713 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-247-3 Variant | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 7.5A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 375pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247HC-3 | -55°C ~ 150°C |
