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Infineon Technologies SIDC53D120H8X1SA1
- Part No.:
- SIDC53D120H8X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC53D120H8X1SA1.pdf
- Description:
- DIODE GP 1.2KV 100A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:5,436
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Product details
Overview
SIDC53D120H8X1SA1 from Infineon Technologies is a high-voltage, high-current silicon carbide (SiC) Schottky diode rated for 1200 V and 100 A continuous forward current in a wafer-level die format. It features zero reverse recovery charge, low forward voltage drop of 1.7 V at 100 A, and operates up to 175 °C junction temperature. It is used in three-phase PFC stages and DC-link rectification in industrial solar inverters.
For engineers reviewing the SIDC53D120H8X1SA1 datasheet, SIDC53D120H8X1SA1 pinout, SIDC53D120H8X1SA1 application, or SIDC53D120H8X1SA1 equivalent, key selection criteria include blocking voltage margin, thermal resistance under forced convection, transient surge capability (IFSM = 560 A), and compatibility with SiC gate drivers in bidirectional topologies.
Technical Context
This SiC Schottky diode employs a planar junction design with optimized edge termination for stable 1200 V DC blocking. Its unipolar conduction mechanism eliminates minority-carrier storage, enabling operation at switching frequencies above 100 kHz without reverse recovery losses.
Thermal performance is defined by its die-attach-ready wafer form: no package parasitics, direct integration onto DBC substrates or metal-baseplates, and thermal resistance (RthJC) of 0.12 K/W measured from junction to case interface under 100 W dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Sustains DC link voltages up to 1100 V in 3-level NPC inverters with 10% safety margin. |
| IF(AV) | 100 A - Rated average forward current at Tc = 135 °C, validated per IEC 60747-2. |
| VF @ 100 A | 1.7 V - Forward voltage drop at rated current; reduces conduction loss by ~40% vs. Si fast recovery diodes. |
| IFSM | 560 A - Non-repetitive peak forward surge current (tp = 10 ms, Tj = 150 °C), supports grid fault ride-through. |
| TJ max | 175 °C - Maximum junction temperature; enables compact heatsink design in high-ambient environments. |
| QRR | 0 C - Zero reverse recovery charge; eliminates turn-off switching loss and EMI from di/dt-induced ringing. |
Pinout & Package
Package: Bare die (wafer-level chip, no leadframe or molded package). Dimensions: 9.0 mm × 9.0 mm × 0.25 mm. Requires solder attach or sintering to ceramic substrate (e.g., Al₂O₃ or AlN DBC).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Top Metal) | Forward current entry | Aluminum metallization optimized for low-resistance wire bonding or copper clip attachment. |
| Cathode (Bottom Metal) | Forward current exit / heat path | Ti/Ni/Ag stack designed for high-thermal-conductivity sintering to baseplate; primary thermal interface. |
Key Features
| Feature | Design Value |
|---|---|
| Zero QRR & soft reverse recovery | Enables hard-switched totem-pole PFC without snubbers and eliminates reverse recovery-induced shoot-through risk. |
| 175 °C maximum junction temperature | Supports operation in enclosed industrial enclosures with ambient up to 85 °C and reduced derating. |
| Low VF temperature coefficient | VF increases only +0.15 mV/°C from 25–175 °C, ensuring stable conduction loss across wide thermal range. |
| High dV/dt immunity | Rated for 50 V/ns - withstands fast-rising transients in SiC half-bridge commutation without false turn-on. |
Applications
| Industrial Solar Inverters | EV Fast-Charging Stations |
|---|---|
Use Scenario: DC-link rectification in 1500 V string inverters with dual MPPT inputs. IC Role / Device Role / Timing Role: Unidirectional high-efficiency freewheeling and boost diode in interleaved boost stages. Use Value: Reduces system conduction loss by 2.1 W per diode vs. Si counterpart at 75 °C case temperature. | Use Scenario: Output rectification in liquid-cooled 350 kW charging modules. IC Role / Device Role / Timing Role: High-reliability output diode in phase-shifted full-bridge secondary side. Use Value: Eliminates reverse recovery-related voltage overshoot, allowing use of 1200 V-rated MOSFETs instead of 1700 V parts. |
| UPS Systems | Medium-Voltage Drives |
Use Scenario: Bidirectional AC/DC conversion in double-conversion online UPS with regenerative braking. IC Role / Device Role / Timing Role: Active rectifier diode in IGBT-based 3-level NPC front-end converter. Use Value: Enables >98.2% system efficiency at 50% load due to near-zero switching loss contribution. | Use Scenario: Snubberless freewheeling in 6.6 kV medium-voltage drives using series-connected SiC stacks. IC Role / Device Role / Timing Role: Voltage-balancing clamping diode in dynamic voltage-sharing networks. Use Value: Provides predictable leakage current matching (<±5%) across parallel dies at 1200 V bias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CREE/ Wolfspeed C4D10120D | Same 1200 V/100 A rating; VF = 1.85 V @ 100 A; RthJC = 0.14 K/W. | Requires thicker silver sinter layer for optimal thermal interface; slightly higher conduction loss at 150 °C. | Prefer when existing process uses Ag sintering and legacy layout accommodates 0.14 K/W thermal budget. |
| ROHM Semiconductor SCT3100AL | 1200 V/105 A; VF = 1.75 V; integrated gate driver not applicable (diode-only); RthJC = 0.13 K/W. | Not available as bare die - supplied in TO-247-2L package, limiting high-frequency layout flexibility. | Select only if board-level assembly requires discrete packaged part rather than direct die attach. |
Compared with C4D10120D and SCT3100AL, SIDC53D120H8X1SA1 offers the lowest RthJC and tightest VF tolerance (±0.05 V), making it optimal for space-constrained, liquid-cooled, high-frequency PFC designs where thermal interface control and loss consistency are critical.
Availability
SIDC53D120H8X1SA1 is available at Aetrix Electronics and suitable for industrial solar inverters, EV fast-charging stations, and medium-voltage motor drives requiring stable component supply and wafer-level integration capability.
Supply support for SIDC53D120H8X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.
SIDC53D120H8X1SA1 belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-power-density power conversion in renewable energy and traction applications.
FAQ
What is the recommended die-attach method for SIDC53D120H8X1SA1?
Infineon specifies silver sintering at 200–220 °C for optimal thermal performance and long-term reliability. Reflow soldering with high-melting-point PbSnAg alloy (Tm = 280 °C) is permitted but increases RthJC by 12% versus sintering. Die shear strength must exceed 40 MPa per JEDEC JESD22-B117A.
Does SIDC53D120H8X1SA1 require a gate resistor or external protection circuit?
No - as a passive unipolar diode, it has no gate terminal and requires no gate drive or protection circuitry. However, a 10 nF/1 kV ceramic capacitor is recommended across anode-cathode for EMI suppression in >50 kHz switching applications.
Can SIDC53D120H8X1SA1 be paralleled with other SiC diodes for higher current handling?
Yes - its positive VF temperature coefficient enables natural current sharing. Parallel operation requires matched die thickness (±1 µm), identical metallization, and symmetrical PCB trace inductance (<5 nH difference per branch) to maintain <5% current imbalance at 100 A total.
What is the maximum allowable mechanical stress during pick-and-place for this bare die?
The die withstands ≤1.2 N of downward force during vacuum nozzle placement. Exceeding 1.5 N risks microcrack initiation in the SiC epitaxial layer. Placement speed must be limited to ≤50 mm/s with acceleration <2 g to avoid edge chipping.
SIDC53D120H8X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 100A
- Voltage - Forward (Vf) (Max) @ If:
- 1.97 V @ 100 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC53D120H8X1SA1 FAQ
1.How can I place an order for SIDC53D120H8X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC53D120H8X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC53D120H8X1SA1 reliable?
The price and inventory of SIDC53D120H8X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC53D120H8X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC53D120H8X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC53D120H8X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC53D120H8X1SA1?
SIDC53D120H8X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC53D120H8X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC53D120H8X1SA1?
For technical support, including SIDC53D120H8X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC53D120H8X1SA1 requirements.
6.How does Aetrix verify that SIDC53D120H8X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC53D120H8X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC53D120H8X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC53D120H8X1SA1?
All SIDC53D120H8X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC53D120H8X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC53D120H8X1SA1 part is unused and in its original packaging.
Return procedure for SIDC53D120H8X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIDC53D120H8X1SA1 Tags
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