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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDP2321XUMA1 IC AC/DC DGTL PLATFORM 16SOIC Infineon Technologies	3,381	RFQ	-	*	-	Tape & Reel (TR)	Not For New Designs	-	-	-	-	-	-	-	-	-	-	-	-	-
IDV05S60CXKSA1 DIODE SIL CARB 600V 5A TO220FP Infineon Technologies	5,855	RFQ	Datasheet	CoolSiC™+	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 600 V	240pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDK09G65C5XTMA2 DIODE SIL CARB 650V 9A TO263-2 Infineon Technologies	8,118	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	650 V	9A	1.8 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	1.6 mA @ 650 V	270pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
SIDC08D60C6 DIODE GP 600V 30A WAFER Infineon Technologies	7,497	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	600 V	30A	1.95 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
IDV06S60CXKSA1 DIODE SIL CARB 600V 6A TO220FP Infineon Technologies	8,311	RFQ	Datasheet	CoolSiC™+	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 600 V	280pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDB06S60C DIODE SIL CARB 600V 6A TO263-3-2 Infineon Technologies	8,249	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 600 V	280pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-3-2	-55°C ~ 175°C
SIDC11D60SIC3 DIODE SIL CARB 600V 4A WAFER Infineon Technologies	2,474	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	600 V	4A	1.9 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	150pF @ 1V, 1MHz	-	-	Surface Mount	Sawn on foil	-55°C ~ 175°C
IDC10D120T6MX1SA1 DIODE GP 1.2KV 15A WAFER Infineon Technologies	7,472	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	1200 V	15A	2.05 V @ 15 A	Standard Recovery >500ns, > 200mA (Io)	-	3.5 µA @ 1200 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
SDD04S60 DIODE SIL CARB 600V 4A TO252-31 Infineon Technologies	8,136	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	4A	1.9 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	150pF @ 0V, 1MHz	-	-	Surface Mount	PG-TO252-3-11	-55°C ~ 175°C
IDD04S60CBUMA1 DIODE SIC 600V 5.6A TO252-31 Infineon Technologies	2,579	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	5.6A	1.9 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	130pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3-11	-55°C ~ 175°C

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