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Infineon Technologies SIDC08D60C6
- Part No.:
- SIDC08D60C6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC08D60C6.pdf
- Description:
- DIODE GP 600V 30A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:7,497
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Product details
Overview
SIDC08D60C6 from Infineon Technologies is a 600 V, 30 A fast-switching silicon power diode chip fabricated in EMCON 3 technology with 70 µm die thickness, designed for use in IGBT module anodes and discrete high-frequency rectification where soft recovery and low Qr are critical - e.g., in industrial motor drives and UPS inverters.
For engineers reviewing the SIDC08D60C6 datasheet, SIDC08D60C6 pinout (anode/cathode terminals), SIDC08D60C6 application in power modules or discrete rectifiers, or SIDC08D60C6 equivalent for 600 V soft-recovery diodes, this page delivers verified chip-level specifications, thermal limits, dynamic recovery behavior, and packaging interface data directly applicable to thermal-mechanical layout and module integration.
Technical Context
This die implements a planar, soft-recovery p-n junction optimized for low reverse recovery charge (Qr = 1.20–2.50 µC) and controlled peak reverse recovery current (IRM = 44–50 A) under 2100 A/µs di/dt. Its 70 µm thickness and AlSiCu anode/Ni-Ag cathode metallization support high-current wire bonding and conductive-die-attach compatibility.
Rated for Tj = –40 °C to +175 °C operation, it exhibits minimal temperature coefficient in forward voltage and reverse leakage, enabling stable performance across wide thermal ranges in compact power modules without active cooling derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR | 600 V repetitive peak reverse voltage - supports DC-link clamping and freewheeling in 600 V-class inverters |
| IF | 30 A continuous forward current at Tj = 150 °C - defines steady-state conduction capability in module-anode placement |
| VF | 1.25–1.95 V @ 30 A, 25 °C - low forward drop reduces conduction loss in high-duty-cycle rectification |
| Qr | 1.20–2.50 µC @ 30 A, 300 V, 2100 A/µs - low recovered charge minimizes switching loss and EMI in hard-switched topologies |
| Tj max | +175 °C - enables high-power density packaging with reduced heatsink requirements |
| Die size | 3.46 × 2.3 mm² active area - matches standard EMCON 3 module die attach footprints and wire bond pad spacing |
Pinout & Package
Package: Bare die (unencapsulated chip) in EMCON 3 technology, supplied on foil tape; no leadframe or molded package. Anode and cathode are planar metalized surfaces on front and back sides respectively.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad (AlSiCu) | Forward current entry / high-side connection | 2.76 × 1.6 mm² metallized surface for solder or conductive epoxy die attach; compatible with Al wire bonding |
| Cathode (Ni-Ag) | Forward current exit / low-side connection | Full-backside metallization enabling low-inductance cathode connection in press-pack or soldered module configurations |
Key Features
| Feature | Design Value |
|---|---|
| Soft, fast switching | Controlled IRM and dIrr/dt reduce voltage overshoot and snubber stress in IGBT co-packaged modules |
| Low Qr | 1.20 µC typical at 25 °C enables >20 kHz operation in servo drives without excessive switching loss |
| Small temp. coefficient | VF drift < 0.5 mV/K and IR variation < ±15% over –40 to +150 °C ensures stable paralleling behavior |
| 70 µm thin die | Reduces carrier lifetime and improves recovery symmetry while maintaining mechanical robustness for automated die placement |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Freewheeling path in 3-phase IGBT-based VFDs driving HVAC compressors and pumps. IC Role / Device Role / Timing Role: Module-integrated anti-parallel diode providing low-loss, soft-recovery commutation during IGBT turn-off. Use Value: Qr ≤ 2.5 µC and soft IRM profile suppress dv/dt-induced shoot-through and reduce snubber capacitor sizing by 30%. | Use Scenario: Output rectification and battery-charging path in double-conversion online UPS systems. IC Role / Device Role / Timing Role: High-current discrete diode in parallel-configured rectifier stacks handling 30–60 A RMS output. Use Value: Stable VF across –25 to +125 °C ambient enables predictable thermal management without derating in sealed cabinets. |
| Solar Inverters | Welding Equipment |
Use Scenario: DC-link clamping and boost-stage freewheeling in string inverters with 600 V DC input. IC Role / Device Role / Timing Role: Chip-level diode embedded in hybrid power modules alongside Si IGBTs for bidirectional energy flow control. Use Value: 175 °C Tj rating allows operation at 100% load in passive-cooled enclosures up to 65 °C ambient. | Use Scenario: Primary rectification in medium-frequency inverter welders operating at 1–10 kHz switching frequency. IC Role / Device Role / Timing Role: Discrete anode die bonded to copper baseplate for low-inductance, high-pulse-current conduction. Use Value: 50 A peak IRM at 150 °C supports 10× rated current surges during arc ignition without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD100-16N1 | 1600 V, 100 A module-integrated diode; larger die, higher Qr (4.8 µC), slower recovery | Targeted at 1200 V industrial drives; not suitable for 600 V space-constrained modules | Select only when higher voltage blocking and higher surge current are required over softness and compact footprint |
| STMicroelectronics STTH30L06CW | 600 V, 30 A TO-247 packaged diode; Qr = 2.8 µC, VF = 1.7 V typ., Tj max = 175 °C | Discrete through-hole solution; lacks bare-die thermal interface and module integration capability | Choose for prototyping or low-volume discrete builds where die attach and wire bonding are impractical |
Compared with MDD100-16N1 and STTH30L06CW, SIDC08D60C6 uniquely balances ultra-low Qr, soft recovery, and 3.46 × 2.3 mm² footprint - making it optimal for high-density, high-frequency power modules where thermal resistance and layout parasitics must be minimized.
Availability
SIDC08D60C6 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar inverters requiring stable component supply with traceable wafer-lot documentation and full Infineon compliance certification.
Supply support for SIDC08D60C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
SIDC08D60C6 belongs to Infineon's EMCON 3 fast diode chip family, engineered specifically for high-efficiency, high-reliability power modules in industrial automation and renewable energy systems.
FAQ
Is SIDC08D60C6 a packaged device or a bare die?
SIDC08D60C6 is a bare silicon die - unencapsulated, supplied on foil tape. It has no leads, molding compound, or housing. Anode and cathode are metallized planar surfaces intended for die bonding into power modules or custom substrates.
What is the maximum allowable junction temperature during transient overload?
The absolute maximum junction temperature is +175 °C, validated per Infineon's qualification standards. Transient operation up to this limit is permitted provided the time-integrated thermal energy does not exceed the die's thermal mass capacity - typically limited to < 10 ms at full-rated IF surge.
Which wire bonding materials are qualified for SIDC08D60C6?
Aluminum wire ≤ 500 µm diameter is qualified per the datasheet. Gold or copper wire is not recommended due to intermetallic formation risk with the AlSiCu anode and Ni-Ag cathode metallizations.
Does SIDC08D60C6 require special ESD handling procedures?
Yes - it is classified as an electrostatic discharge sensitive device per MIL-STD-883. Handling requires grounded workstations, ionized air, and wrist straps; storage must be in dry nitrogen within original sealed containers for ≤ 6 months at 23 °C.
SIDC08D60C6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.95 V @ 30 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC08D60C6 FAQ
1.How can I place an order for SIDC08D60C6 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC08D60C6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC08D60C6 reliable?
The price and inventory of SIDC08D60C6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC08D60C6 is usually 5 days.
3.What payment methods are accepted for SIDC08D60C6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC08D60C6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC08D60C6?
SIDC08D60C6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC08D60C6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC08D60C6?
For technical support, including SIDC08D60C6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC08D60C6 requirements.
6.How does Aetrix verify that SIDC08D60C6 is sourced from the original manufacturer or authorized distributors?
All SIDC08D60C6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC08D60C6 meets industry standards.
7.What is the process for return or replacement of SIDC08D60C6?
All SIDC08D60C6 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC08D60C6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC08D60C6 part is unused and in its original packaging.
Return procedure for SIDC08D60C6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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