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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIDC30D60E6X1SA1DIODE GP 600V 75A WAFER Infineon Technologies |
7,838 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 600 V | 75A | 1.25 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDC10S120C5X1SA1IC DIODE EMITTER CTLR WAFER Infineon Technologies |
4,869 | 0.00 |
|
- |
- | Die | Bulk | Active | - | - | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil | - |
|
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AIDK16S65C5ATMA1SIC_DISCRETE PG-TO263-2 Infineon Technologies |
9,272 | 0.00 |
|
Datasheet |
CoolSiC™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 483pF @ 1V, 1MHz | Automotive | AEC-Q101 | Surface Mount | PG-TO263-2 | -40°C ~ 175°C |
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SIDC32D170HX1SA3DIODE GP 1.7KV 50A WAFER Infineon Technologies |
2,539 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1700 V | 50A | 1.8 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | - | - | Surface Mount | Sawn on foil | -55°C ~ 150°C |
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IDC40D120T6MX1SA4DIODE GP 1.2KV 75A WAFER Infineon Technologies |
9,611 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 75A | 2.05 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 14 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC42D120H8X1SA3DIODE GP 1.2KV 75A WAFER Infineon Technologies |
4,828 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 1200 V | 75A | 1.97 V @ 50 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
AIDW40S65C5XKSA1DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies |
3,227 | 0.00 |
|
Datasheet |
CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 40A | 1.7 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 1138pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
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SIDC24D30SIC3DIODE SIL CARB 300V 10A WAFER Infineon Technologies |
8,127 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 300 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 300 V | 600pF @ 1V, 1MHz | - | - | Surface Mount | Sawn on foil | -55°C ~ 175°C |
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SDT12S60DIODE SIL CARB 600V 12A TO220-2 Infineon Technologies |
9,923 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 450pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
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SIDC50D60C6X1SA1DIODE GP 600V 200A WAFER Infineon Technologies |
5,707 | 0.00 |
|
Datasheet |
- | Die | Bulk | Discontinued at Digi-Key | Standard | 600 V | 200A | 1.9 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
