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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SDT12S60

Name: SDT12S60
Brand: Infineon Technologies
SKU: SDT12S60
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SDT12S60

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: SDT12S60.pdf

Description:: DIODE SIL CARB 600V 12A TO220-2

Quantity:: RFQ Add To RFQ list

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Inventory:9,923

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Product details

Overview

SDT12S60 from Infineon Technologies is a 600 V, 12 A silicon carbide (SiC) Schottky diode in PG-TO220-2-2 package, designed for high-frequency, high-efficiency power conversion. It delivers zero reverse recovery charge (Q_c = 30 nC), temperature-independent switching, and no forward/reverse recovery, enabling use in PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the SDT12S60 datasheet, SDT12S60 pinout, SDT12S60 application, or SDT12S60 equivalent, key selection criteria include its 600 V V_RRM, 12 A I_F at T_C = 100 °C, 1.7 V typical V_F at 12 A / 150 °C, 450 pF capacitance at 1 V, and thermal resistance R_thJC = 1.7 K/W.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC MOSFET body diodes in hard-switched topologies. Its unipolar conduction eliminates minority-carrier storage, resulting in trr = n.a. and no di/dt-dependent switching loss.

The device operates with stable V_F and I_R across -55 °C to +175 °C junction temperature, and exhibits linear C–V behavior (450 pF @ 1 V → 43 pF @ 600 V), enabling predictable snubber design and EMI control in >100 kHz converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - Maximum blocking voltage without avalanche breakdown; supports 400 V DC-link designs with 50 % margin.
I_F (T_C = 100 °C)	12 A - Continuous forward current rating at case temperature; defines heatsink sizing for steady-state operation.
V_F (12 A, 150 °C)	1.7–2.1 V - Forward voltage drop range; determines conduction loss and thermal rise in PFC boost diodes.
Q_c (400 V, 150 °C)	30 nC - Total capacitive charge; directly sets turn-off loss in hard-switched totem-pole PFC and LLC resonant circuits.
R_thJC	1.7 K/W - Junction-to-case thermal resistance; enables direct calculation of ΔT_J = P_tot × 1.7 for thermal design.
I_R (600 V, 150 °C)	≤2000 µA - Max reverse leakage; remains low and stable at high temperature, avoiding thermal runaway in series strings.
C (1 V, 25 °C)	450 pF - Junction capacitance at low bias; governs high-frequency displacement current and EMI generation.

Pinout & Package

Package: PG-TO220-2-2 - Insulated plastic TO-220 variant with 2 leads (anode and cathode), isolated mounting base, and creepage/clearance compliant with IEC 60664-1 for 600 V systems.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Cathode (C)	Main high-side return path; electrically connected to metal tab; requires isolation when mounted to heatsink.
Pin 2	Anode (A)	Input terminal for forward conduction; routed to AC/DC input or switch node in bridge configurations.

Key Features

Feature	Design Value
No reverse recovery	Eliminates switching tail current and associated losses, enabling >300 kHz operation without snubbers.
Temperature-stable V_F	V_F increases only ~0.2 V from 25 °C to 150 °C, simplifying thermal derating in wide-temperature-range designs.
Low Q_c (30 nC)	Reduces turn-off energy by >80 % vs. comparable Si FRD, critical for efficiency in totem-pole PFC.
High T_j max (175 °C)	Enables compact thermal design and extended lifetime in enclosed industrial enclosures with ambient up to 85 °C.
SiC material system	Provides 10× higher critical electric field than Si, enabling thinner drift layers and lower on-resistance per area.

Applications

Industrial SMPS PFC Stage

Solar Inverter DC-Link Clamp

Use Scenario: Boost diode in continuous conduction mode (CCM) active PFC front-end of 3–5 kW server PSUs.

IC Role / Device Role / Timing Role: Unidirectional high-voltage rectifier handling 12 A RMS at 50–100 kHz switching frequency.

Use Value: Zero Q_rr eliminates reverse recovery loss, improving full-load efficiency by 0.8–1.2 % over Si FRDs.

Use Scenario: Clamping diode across IGBT collector-emitter in 10 kW string inverters with 1000 V DC-link.

IC Role / Device Role / Timing Role: Fast, low-loss freewheeling path during IGBT turn-off to suppress voltage overshoot.

Use Value: 30 nC Q_c limits clamp energy dissipation, reducing snubber size and thermal stress on IGBT modules.

EV Onboard Charger (OBC)

UPS High-Frequency Rectification

Use Scenario: Output rectifier in dual-phase interleaved LLC resonant converter of 6.6 kW OBC.

IC Role / Device Role / Timing Role: Synchronous rectification replacement with fixed-polarity conduction and no gate drive complexity.

Use Value: Stable 1.7 V V_F at 150 °C ensures predictable conduction loss across battery charging cycles and ambient temperature swings.

Use Scenario: Input rectifier in high-density 3 kVA online UPS with 200 kHz phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-speed, low-loss AC-to-DC conversion under dynamic load transients and harmonic-rich input.

Use Value: 43 pF capacitance at 600 V minimizes displacement current distortion, easing EMI filter design and compliance with EN 55011 Class B.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10060A	10 A rating, same 600 V V_RRM, 2.1 V V_F (10 A, 150 °C), 25 nC Q_c	Lower current capability; suited for <10 A PFC or auxiliary supplies	Select when board space or cost constraints favor smaller die size and lower conduction loss at ≤10 A.
SS12060	12 A rating, 600 V V_RRM, 1.9 V V_F (12 A, 150 °C), 35 nC Q_c, TO-220AC package	Non-isolated package; requires insulated mounting hardware for high-voltage isolation	Choose when thermal performance permits non-isolated heatsinking and PCB layout favors standard TO-220 footprint.

Compared with C3D10060A and SS12060, SDT12S60 offers optimal balance of 12 A current handling, 30 nC Q_c, and PG-TO220-2-2's built-in isolation-making it preferred for safety-critical, high-density industrial PFC where creepage and thermal reliability are jointly constrained.

Availability

SDT12S60 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, EV onboard chargers, and UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SDT12S60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The SDT12S60 belongs to Infineon's thinQ!™ SiC Schottky diode product line, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion where zero-recovery loss and thermal stability are mandatory.

FAQ

What is the maximum junction temperature for SDT12S60?

The SDT12S60 has a specified operating junction temperature range of –55 °C to +175 °C. This allows reliable operation in harsh environments such as enclosed industrial drives or under-hood automotive chargers, provided thermal design maintains T_j ≤ 175 °C under worst-case power dissipation and ambient conditions.

Does SDT12S60 require a gate driver or external control circuitry?

No. As a passive unipolar Schottky diode, SDT12S60 conducts automatically when forward-biased and blocks when reverse-biased-no gate signal, timing control, or driver IC is needed. Its operation depends solely on applied voltage polarity and magnitude relative to V_F and V_RRM.

How does SDT12S60's thermal resistance compare to silicon diodes?

SDT12S60 has R_thJC = 1.7 K/W, significantly lower than typical 600 V Si FRDs (R_thJC ≈ 2.5–3.5 K/W). This reflects SiC's superior thermal conductivity (4.9 W/cm·K vs. Si's 1.5 W/cm·K), enabling higher power density and reduced heatsink mass in thermally constrained designs.

Can SDT12S60 be used in parallel configurations?

Yes-its positive temperature coefficient of V_F promotes natural current sharing. However, layout symmetry (matched trace inductance/resistance) and individual thermal coupling are essential. Derating to ≤80 % of total rated current per device is recommended for robustness in parallel operation.

SDT12S60 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Obsolete

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 12 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 400 µA @ 600 V

Capacitance @ Vr, F:: 450pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

SDT12S60 FAQ

1.How can I place an order for SDT12S60 through Aetrix?

Please submit a Request for Quotation (RFQ) for SDT12S60 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SDT12S60 reliable?

The price and inventory of SDT12S60 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SDT12S60 is usually 5 days.

3.What payment methods are accepted for SDT12S60?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SDT12S60 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SDT12S60?

SDT12S60 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SDT12S60 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SDT12S60?

For technical support, including SDT12S60 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SDT12S60 requirements.

6.How does Aetrix verify that SDT12S60 is sourced from the original manufacturer or authorized distributors?

All SDT12S60 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SDT12S60 meets industry standards.

7.What is the process for return or replacement of SDT12S60?

All SDT12S60 units undergo pre-shipment inspection (PSI). If there is an issue with SDT12S60, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SDT12S60 part is unused and in its original packaging.

Return procedure for SDT12S60:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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