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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDD12SG60CXTMA2 DIODE SIL CARB 600V 12A TO252-3 Infineon Technologies	3,000	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	12A	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3	-55°C ~ 175°C
SIDC14D120H6X1SA1 DIODE GP 1.2KV 25A WAFER Infineon Technologies	5,786	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	1200 V	25A	1.6 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1200 V	-	-	-	Surface Mount	Sawn on foil	-55°C ~ 150°C
IDC05S120C5X1SA1 IC DIODE EMITTER CTLR WAFER Infineon Technologies	2,637	RFQ	-	-	Die	Bulk	Active	-	-	-	-	-	-	-	-	-	-	Surface Mount	Sawn on foil	-
SDP06S60 DIODE SIL CARB 600V 6A TO220-3-1 Infineon Technologies	7,130	RFQ	Datasheet	-	TO-220-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	300pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-3-1	-55°C ~ 175°C
SDT06S60 DIODE SIL CARB 600V 6A TO220-2-2 Infineon Technologies	9,690	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	300pF @ 0V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDB10S60C DIODE SIL CARB 600V 10A TO263-3 Infineon Technologies	3,731	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	SiC (Silicon Carbide) Schottky	600 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 600 V	480pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-3-2	-55°C ~ 175°C
SIDC20D60C6 DIODE GP 600V 75A WAFER Infineon Technologies	9,216	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	600 V	75A	1.9 V @ 75 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
IDW24G65C5BXKSA2 DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies	5,005	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3	-55°C ~ 175°C
SIDC26D60C6 DIODE GP 600V 100A WAFER Infineon Technologies	8,904	RFQ	Datasheet	-	Die	Bulk	Discontinued at Digi-Key	Standard	600 V	100A	1.9 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C
IDC28D120T6MX1SA2 DIODE GP 1.2KV 50A WAFER Infineon Technologies	8,894	RFQ	Datasheet	-	Die	Bulk	Obsolete	Standard	1200 V	50A	2.05 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	-	-	Surface Mount	Sawn on foil	-40°C ~ 175°C

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