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Infineon Technologies SIDC26D60C6
- Part No.:
- SIDC26D60C6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC26D60C6.pdf
- Description:
- DIODE GP 600V 100A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:8,904
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Product details
Overview
SIDC26D60C6 from Infineon Technologies is a 600 V, 100 A fast-switching power diode chip in EMCON 3 technology with 70 µm die thickness, soft reverse recovery (Qr = 4.0–10.0 µC), low forward voltage (VF = 1.2–1.9 V @ 100 A), and optimized for use in IGBT-based power modules in industrial motor drives.
For engineers reviewing the SIDC26D60C6 datasheet, SIDC26D60C6 pinout, SIDC26D60C6 application, or SIDC26D60C6 equivalent, key selection criteria include reverse recovery charge temperature dependence, junction temperature rating up to +175 °C, soft switching behavior under high di/dt (5100 A/µs), and compatibility with epoxy and soft-solder die bonding in module assembly.
Technical Context
This silicon diode chip employs Infineon's EMCON 3 process, featuring a 70 µm thin wafer and photoimide passivation for thermal and mechanical robustness in press-pack and solder-bonded power modules. Its cathode metallization uses Ni/Ag for reliable epoxy and soft-solder attachment, while anode metallization is 3200 nm AlSiCu.
Designed for co-packaging with IGBTs in 600 V class inverters, it delivers soft, controlled reverse recovery (IRM = 130–160 A) and low temperature coefficient of VF, enabling stable conduction loss across –40 °C to +175 °C operating range without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR | 600 V - maximum repetitive reverse blocking voltage, suitable for 600 V IGBT-based inverter DC-link applications |
| IF | 100 A - rated continuous forward current at Tj = 25 °C; derates with junction temperature and thermal interface resistance |
| VF | 1.2–1.9 V @ 100 A - low conduction loss enabling high-efficiency power conversion in motor drives |
| Qr | 4.0–10.0 µC - low, temperature-stable recovered charge reduces switching losses and EMI in hard-switched topologies |
| Tj | –40 °C to +175 °C - wide operating junction temperature range supports compact, high-power-density module designs |
| Die size | 6.53 × 4.02 mm² - standardized footprint for automated die placement in power module manufacturing |
| Thickness | 70 µm - ultra-thin die enables low thermal resistance and improved thermal cycling reliability |
Pinout & Package
Package: Bare die (unpackaged chip) in EMCON 3 technology, supplied on foil with sawn edges; no leadframe or molded package. Die dimensions: 6.53 mm × 4.02 mm × 70 µm; anode pad: 5.83 mm × 3.32 mm; flat position: 180°.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Large-area AlSiCu metallization (5.83 × 3.32 mm²) optimized for low-resistance, high-current bond interfaces |
| Cathode | Forward current exit / reverse blocking terminal | Ni/Ag stack compatible with both epoxy adhesives and soft-solder die attach in press-pack and soldered modules |
Key Features
| Feature | Design Value |
|---|---|
| Soft reverse recovery | Controlled IRM and dIrr/dt minimize voltage overshoot and EMI during turn-off in inductive loads |
| Low Qr temperature coefficient | Qr increases only 2.5× from 25 °C to 150 °C (4.0 → 10.0 µC), ensuring predictable switching loss across operating range |
| High thermal cycling capability | 70 µm thin die with photoimide passivation improves mechanical compliance and fatigue resistance in thermal expansion mismatched assemblies |
| Module-ready metallization | Ni/Ag cathode and AlSiCu anode support both conductive-epoxy and soft-solder die bonding without intermetallic degradation |
| ESD-sensitive handling | Classified per MIL-STD-883; requires static-safe handling and nitrogen storage (<6 months at 23 °C) to preserve surface integrity |
Applications
| Industrial Motor Drives | Renewable Energy Inverters |
|---|---|
Use Scenario: 600 V three-phase inverter stage in HVAC compressors and pump drives operating at 4–16 kHz PWM frequency. IC Role / Device Role / Timing Role: Freewheeling diode paired with 600 V IGBTs in six-pack power modules, conducting reverse recovery current during IGBT turn-on. Use Value: Soft recovery and low Qr reduce snubber stress and conduction loss, enabling >98% system efficiency at full load. | Use Scenario: DC-link freewheeling path in solar string inverters with unidirectional power flow and high ambient temperature exposure. IC Role / Device Role / Timing Role: Anti-parallel diode in half-bridge IGBT modules, clamping inductive energy during grid-synchronization transitions. Use Value: Stable VF and Qr over –40 °C to +175 °C ensure consistent thermal performance without derating in desert-mounted enclosures. |
| Electric Vehicle Onboard Chargers | Industrial UPS Systems |
Use Scenario: Boost PFC stage in 3.3 kW bidirectional OBC modules requiring high-frequency, high-reliability diode operation. IC Role / Device Role / Timing Role: Fast-recovery diode in interleaved boost converters, handling 100 kHz+ switching with minimal reverse recovery tail. Use Value: Low Erec (1.3–2.75 mJ) and soft IRM waveform suppress voltage spikes that would otherwise trigger IGBT overvoltage protection. | Use Scenario: Output rectification and regeneration path in double-conversion online UPS systems with strict THD and reliability requirements. IC Role / Device Role / Timing Role: High-current freewheeling element in IGBT-based output inverters, managing regenerative braking energy during battery charging cycles. Use Value: 200 A peak repetitive current rating and robust Ni/Ag cathode enable long-term operation under frequent surge loading without bond lift or metallization fatigue. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching power diode chip applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF100R06KE3 | Integrated 600 V, 100 A IGBT + diode module; includes matched diode but not bare die | Used in pre-assembled modules; lacks die-level flexibility for custom thermal or layout optimization | Select when module-level integration and qualification time reduction outweigh die-level customization needs |
| IDD08SG60C | 600 V, 80 A discrete diode chip with SiC Schottky structure; zero Qr, higher VF (~2.5 V) | Enables >100 kHz operation with no reverse recovery loss; limited to lower current density due to smaller die area | Select for ultra-high-frequency, low-loss topologies where conduction loss trade-off is acceptable and SiC compatibility is required |
Compared with FF100R06KE3 and IDD08SG60C, SIDC26D60C6 provides optimal balance of soft switching, thermal robustness, and bare-die manufacturability for high-volume 600 V IGBT module assembly-offering superior Qr control versus SiC alternatives and greater thermal design freedom than integrated modules.
Availability
SIDC26D60C6 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, electric vehicle onboard chargers, and industrial UPS systems requiring stable component supply and traceable wafer-lot sourcing.
Supply support for SIDC26D60C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
SIDC26D60C6 belongs to Infineon's EMCON 3 power diode chip family, engineered specifically for high-reliability, high-current freewheeling in press-pack and solder-bonded IGBT modules used in industrial drive and energy conversion systems.
FAQ
Is SIDC26D60C6 a packaged device or bare die?
SIDC26D60C6 is a bare silicon die-unencapsulated, sawn on foil, with no leadframe or molding compound. It measures 6.53 mm × 4.02 mm × 70 µm and is intended for direct die bonding into power modules using epoxy or soft solder. No terminals or leads are attached.
What does "EMCON 3 technology" refer to in this diode?
EMCON 3 is Infineon's proprietary epitaxial diode process featuring optimized lifetime control, soft recovery characteristics, and enhanced thermal robustness. It uses a 70 µm thin wafer, photoimide passivation, and AlSiCu/NiAg metallization to achieve low Qr, stable VF, and high surge current capability in power module environments.
Can SIDC26D60C6 be used as a standalone discrete diode?
No-it is not designed for discrete mounting. SIDC26D60C6 lacks package insulation, wire bond pads for external connection, and standardized termination. It must be integrated into a power module with appropriate thermal interface, electrical isolation, and mechanical clamping or soldering to function safely at rated current and voltage.
What is the significance of the 180° flat position specification?
The 180° flat position defines the angular orientation of the die's reference edge relative to its anode/cathode axis, ensuring consistent alignment during automated pick-and-place in module assembly. This mechanical datum enables repeatable die placement accuracy within ±0.1 mm, critical for uniform thermal resistance and bond line thickness control in high-power modules.
SIDC26D60C6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 100A
- Voltage - Forward (Vf) (Max) @ If:
- 1.9 V @ 100 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC26D60C6 FAQ
1.How can I place an order for SIDC26D60C6 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC26D60C6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC26D60C6 reliable?
The price and inventory of SIDC26D60C6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC26D60C6 is usually 5 days.
3.What payment methods are accepted for SIDC26D60C6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC26D60C6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC26D60C6?
SIDC26D60C6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC26D60C6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC26D60C6?
For technical support, including SIDC26D60C6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC26D60C6 requirements.
6.How does Aetrix verify that SIDC26D60C6 is sourced from the original manufacturer or authorized distributors?
All SIDC26D60C6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC26D60C6 meets industry standards.
7.What is the process for return or replacement of SIDC26D60C6?
All SIDC26D60C6 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC26D60C6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC26D60C6 part is unused and in its original packaging.
Return procedure for SIDC26D60C6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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