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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDB10S60C

Name: IDB10S60C
Brand: Infineon Technologies
SKU: IDB10S60C
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDB10S60C

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IDB10S60C.pdf

Description:: DIODE SIL CARB 600V 10A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,731

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Product details

Overview

IDB10S60C from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V DC blocking voltage and 10 A continuous forward current, featuring zero reverse recovery charge, <10 ns switching time, and operation up to 175 °C junction temperature. It serves as a high-efficiency freewheeling or boost diode in CCM PFC stages and motor drive inverters.

For engineers reviewing the IDB10S60C datasheet, IDB10S60C pinout, IDB10S60C application, or IDB10S60C equivalent, key selection criteria include its 24 nC capacitive charge, 1.5–2.1 V forward voltage range across temperature, 50 V/ns dv/dt ruggedness, and D2PAK (PG-TO263-3-2) surface-mount package with isolated drain terminal.

Technical Context

This SiC Schottky diode eliminates minority-carrier storage, delivering true zero reverse recovery (trr = 0) and temperature-independent switching behavior. Its capacitive displacement current dominates turn-off dynamics, with tc <10 ns confirmed at 200 A/µs diF/dt and 150 °C junction temperature.

Thermal design leverages low RthJC of 1.8 K/W and supports high-power density layouts via D2PAK's copper-limited thermal path. The device sustains 76 A non-repetitive surge current (10 ms) and withstands 50 V/ns dv/dt under 480 V reverse bias without snapback.

Key Specifications

Parameter	Value and Actual Design Meaning
V_R	600 V DC blocking voltage - enables use in 400 V AC input PFC and 600 V bus motor drives
I_F	10 A continuous forward current at T_C <135 °C - defines steady-state conduction capability
V_F	1.5–2.1 V at 10 A - low forward drop reduces conduction loss vs. silicon fast recovery diodes
Q_c	24 nC total capacitive charge - determines turn-off energy and EMI profile in hard-switched topologies
t_c	<10 ns switching time constant - enables MHz-class switching without reverse recovery spikes
R_thJC	1.8 K/W junction-to-case - allows direct heatsinking through D2PAK tab for thermal management
I_F,SM	76 A surge current (10 ms) - supports short-term overload in motor startup or line transients

Pinout & Package

Package: D2PAK (PG-TO263-3-2), surface-mount, isolated drain tab, RoHS-compliant lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain / Cathode	Electrically isolated metal tab - primary thermal path and high-current cathode connection
Pin 2	Anode	Source-connected anode terminal - routed to switching node in boost or inverter leg
Pin 3	Source / Cathode Tie	Secondary cathode connection - used for Kelvin sensing or parallel layout symmetry

Key Features

Feature	Design Value
No reverse recovery charge (Q_rr = 0)	Eliminates switching loss and EMI from tail current, enabling higher frequency operation
Temperature-stable switching	tc remains <10 ns from –55 °C to 175 °C - simplifies thermal derating in wide-temp designs
High dv/dt ruggedness	50 V/ns rated at V_R = 0–480 V - prevents false triggering in high-di/dt inverter legs
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for industrial and automotive power supply lifetimes
Low R_thJC	1.8 K/W - enables >80 W dissipation with modest heatsinking on PCB copper area

Applications

Industrial Motor Drives

Server & Telecom CCM PFC

Use Scenario: 3-phase inverter output stage with 600 V DC bus and 10–20 kHz PWM switching.

IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs/MOSFETs, clamping inductive kickback during dead-time.

Use Value: Zero Q_rr prevents shoot-through risk and reduces snubber losses by >40% vs. Si FRD.

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 3 kW server PSU with 96% efficiency target.

IC Role / Device Role / Timing Role: Boost diode conducting during MOSFET off-time, handling 10 A RMS at 100 kHz switching.

Use Value: 24 nC Q_c cuts turn-off loss by 65% versus 600 V Si FRD, enabling 20 kHz+ operation without penalty.

Solar Inverter DC Link

EV Onboard Charger

Use Scenario: DC link clamping in 1000 V string inverters with bidirectional power flow and grid synchronization.

IC Role / Device Role / Timing Role: Anti-parallel diode in full-bridge IGBT module, conducting reactive current during zero-crossing.

Use Value: 175 °C max T_j and stable V_F allow compact heatsink design in sealed outdoor enclosures.

Use Scenario: Bidirectional AC/DC and DC/DC stage in 11 kW OBC with 600 V battery interface.

IC Role / Device Role / Timing Role: Synchronous rectification diode in active clamp flyback or CLLC resonant converter.

Use Value: 50 V/ns dv/dt rating ensures robust operation during fast ZVS transitions without parasitic turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C4D10120A	1200 V rating, 10 A, 1.8 V V_F, 32 nC Q_c, TO-247-2L	Higher voltage margin but larger package and higher Q_c; requires mechanical redesign	Select only if system requires >600 V bus derating or legacy TO-247 footprint
ROHM SCT2010AW	650 V, 10 A, 1.55 V V_F, 22 nC Q_c, TO-263AB (D2PAK)	Same package and voltage class; slightly lower Q_c but unqualified for automotive temp range	Valid for industrial PFC where 175 °C operation is not required

Compared with C4D10120A and SCT2010AW, IDB10S60C uniquely balances 600 V rating, D2PAK compatibility, JEDEC qualification, and 24 nC Q_c-making it optimal for cost-sensitive, thermally constrained CCM PFC and motor drive designs requiring proven industrial reliability.

Availability

IDB10S60C is available at Aetrix Electronics and suitable for industrial motor drives, server CCM PFC units, solar inverter DC links, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for IDB10S60C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

IDB10S60C belongs to Infineon's thinQ!™ 2nd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency power conversion in industrial and renewable energy systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDB10S60C supports continuous operation up to 175 °C junction temperature, verified per JEDEC qualification standards. Derating curves in the datasheet define safe I_F limits above 125 °C, with thermal resistance R_thJC = 1.8 K/W enabling reliable performance in sealed or high-ambient environments.

Does this diode require a gate resistor or snubber network?

No gate resistor is needed since the IDB10S60C is a passive diode with no control terminal. A snubber is generally unnecessary due to zero reverse recovery and low stored charge; however, a small RC snubber may be added for EMI suppression in ultra-high-di/dt layouts (>500 A/µs).

Can IDB10S60C replace a silicon fast recovery diode directly?

Yes, in most cases - the D2PAK footprint and pinout match common Si FRDs. However, layout must account for lower V_F (reduced conduction loss) and absence of reverse recovery (eliminating snubber dependency), which may require re-optimization of gate drive timing and thermal design.

Is this part qualified for automotive applications?

IDB10S60C is qualified per JEDEC J-STD-20/JESD22 for industrial applications and meets AEC-Q101 stress test conditions in Infineon's internal validation. It is not officially AEC-Q101 certified; for automotive use, Infineon recommends the automotive-grade IDH10SG60C variant with full qualification documentation.

IDB10S60C Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 10A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 10 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 140 µA @ 600 V

Capacitance @ Vr, F:: 480pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDB10S60C FAQ

1.How can I place an order for IDB10S60C through Aetrix?

Please submit a Request for Quotation (RFQ) for IDB10S60C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDB10S60C reliable?

The price and inventory of IDB10S60C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDB10S60C is usually 5 days.

3.What payment methods are accepted for IDB10S60C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDB10S60C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDB10S60C?

IDB10S60C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDB10S60C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDB10S60C?

For technical support, including IDB10S60C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDB10S60C requirements.

6.How does Aetrix verify that IDB10S60C is sourced from the original manufacturer or authorized distributors?

All IDB10S60C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDB10S60C meets industry standards.

7.What is the process for return or replacement of IDB10S60C?

All IDB10S60C units undergo pre-shipment inspection (PSI). If there is an issue with IDB10S60C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDB10S60C part is unused and in its original packaging.

Return procedure for IDB10S60C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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