Infineon Technologies IDW24G65C5BXKSA2

Overview

IDW24G65C5BXKSA2 from Infineon is a 650 V, dual-leg silicon carbide Schottky diode in TO-247-3 package, rated for 12 A continuous forward current per leg at TC < 125°C, with zero reverse recovery charge and temperature-independent switching. It delivers 1.5–1.7 V forward voltage at 12 A/25°C and supports high-frequency PFC and solar inverter designs requiring low-loss, high-reliability rectification.

For engineers reviewing the IDW24G65C5BXKSA2 datasheet, IDW24G65C5BXKSA2 pinout, IDW24G65C5BXKSA2 application, or IDW24G65C5BXKSA2 equivalent, key selection criteria include its 650 V VRRM rating, 18 nC total capacitive charge at VR = 400 V, 1.5 K/W typical RthJC, surge capability up to 71 A (tp = 10 ms), and dual-anode/dual-cathode configuration enabling interleaved topologies.

Technical Context

This dual-leg SiC Schottky diode integrates two independent 650 V, 12 A diode elements in a single TO-247-3 package with shared case thermal path. Each leg exhibits no reverse recovery, eliminating switching losses and associated EMI in hard-switched converters.

Its thin-wafer 5th-generation thinQ!™ design reduces Qc × Vf figure of merit versus prior generations, enabling higher power density in PFC stages and DC-link rectification where thermal management and efficiency are critical at 150°C junction operation.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole, isolated tab, M3 mounting screw compatible). Thermal pad electrically connected to cathode (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06060A and STPSC20065DL, IDW24G65C5BXKSA2 offers superior current density (12 A/leg), lowest Qc × Vf tradeoff, and highest surge robustness-making it optimal for thermally constrained, high-reliability industrial PFC and solar inverter applications.

Availability

IDW24G65C5BXKSA2 is available at Aetrix Electronics and suitable for switch mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IDW24G65C5BXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDW24G65C5BXKSA2 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement CoolMOS™ 650 V power transistors in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

Is IDW24G65C5BXKSA2 suitable for paralleling multiple units to increase current capacity?

No-IDW24G65C5BXKSA2 is a dual-leg device with internally matched diode elements sharing a common cathode. Paralleling separate units is not recommended due to thermal coupling and potential current imbalance. For higher current, use interleaved topologies with individual legs or select higher-rated variants like IDW30G65C5B.

What is the maximum allowable mounting torque for the TO-247-3 package?

The specified mounting torque for M3 screws is 50–70 Ncm. Exceeding 70 Ncm risks cracking the ceramic insulator or deforming the leadframe, compromising thermal resistance and mechanical reliability. Use calibrated torque drivers and verify flatness of heatsink mating surface before installation.

Does IDW24G65C5BXKSA2 require a gate resistor or snubber network?

No-this is a Schottky diode with no gate terminal. Unlike MOSFETs or IGBTs, it has no control input. However, a small RC snubber (e.g., 10 Ω + 100 pF) across each anode–cathode may be used in ultra-high-dv/dt environments (>50 V/ns) to damp ringing caused by stray inductance, though not required for basic operation.

Can IDW24G65C5BXKSA2 operate reliably at 175°C junction temperature?

Yes-the device is rated for Tj up to 175°C, and all key parameters (VF, IR, Qc) are characterized at this temperature. However, continuous operation at 175°C requires strict thermal design: RthJC must remain ≤1.5 K/W, and case temperature must be held ≤125°C via adequate heatsinking and airflow to avoid exceeding lifetime derating limits.