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Infineon Technologies SIDC14D120H6X1SA1
- Part No.:
- SIDC14D120H6X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC14D120H6X1SA1.pdf
- Description:
- DIODE GP 1.2KV 25A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:5,786
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Product details
Overview
SIDC14D120H6X1SA1 from Infineon Technologies is a 1200 V, 25 A fast-switching silicon power diode chip in EMCON technology, fabricated on a 150 mm wafer with 120 µm thickness and 3.8 × 3.8 mm² die area. It delivers soft reverse recovery (S2 = 1 at Tj = 125 °C), low Qrr (5.1 µC at 125 °C), and 1.6 V forward voltage at 25 A - optimized for resonant SMPS and motor drive snubber circuits.
For engineers reviewing the SIDC14D120H6X1SA1 datasheet, SIDC14D120H6X1SA1 pinout, SIDC14D120H6X1SA1 application, or SIDC14D120H6X1SA1 equivalent, key selection criteria include verified reverse recovery charge (Qrr ≤ 5.1 µC @ 125 °C), softness factor (S2 = 1), junction temperature range (–55 to +150 °C), and compatibility with conductive epoxy or solder die-attach processes.
Technical Context
This discrete diode chip employs Infineon's EMCON (Enhanced Controlled Recovery) process, enabling controlled minority-carrier lifetime for predictable soft switching behavior. Its 120 µm thickness and 9.8 mm² active area support high surge current handling while maintaining thermal stability under repetitive 50 A forward current (IFRM) conditions.
Dynamic performance is characterized at two temperatures (25 °C and 125 °C) and defined test conditions: VR = 600 V, di/dt = 675 A/µs, IF = 25 A. Reverse recovery time (trr2) and peak recovery current (IRRM2 = 37.5 A) are specified under these validated stress profiles - critical for ZVS/ZCS converter design validation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - maximum repetitive reverse blocking voltage; defines safe operating margin in 1000 V DC bus applications |
| IF(AV) | 25 A - average forward current at Tjmax; sets continuous conduction capability in hard-switched PFC stages |
| Qrr | 5.1 µC @ Tj = 125 °C - quantifies stored charge removed during turn-off; directly impacts snubber loss and EMI in resonant topologies |
| t rr2 | Not specified - recovery time measured under standardized dynamic test condition (di/dt = 675 A/µs, VR = 600 V) |
| S2 | 1 - softness factor at 125 °C; confirms absence of current tail and oscillation during recovery, reducing voltage overshoot |
| VF | 1.6 V @ IF = 25 A, Tj = 25 °C - forward drop determines conduction loss in high-frequency rectification paths |
| Tj Range | –55 to +150 °C - enables operation in industrial motor drives and solar inverters with wide ambient and self-heating variation |
Pinout & Package
Package: Bare die (chip-on-foil), 3.8 × 3.8 mm² outline, sawn, with AlSiCu anode metallization (3200 nm) and Ni/Ag cathode metallization (1400 nm). No leadframe or molded package - intended for hybrid module integration or discrete die bonding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad (3.08 × 3.08 mm²) | Forward current entry / high-side connection | Large-area AlSiCu metallization supports low-resistance, high-current bond interface; compatible with soft solder or conductive epoxy |
| Cathode pad (full backside) | Forward current exit / low-side connection | Ni/Ag stack provides robust, low-contact-resistance interface to heatsink or substrate; enables efficient thermal path to baseplate |
Key Features
| Feature | Design Value |
|---|---|
| EMCON technology | Controlled carrier lifetime ensures reproducible soft recovery without external snubbers in LLC resonant converters |
| Low Qrr (5.1 µC @ 125 °C) | Reduces turn-off losses by >30% vs. standard fast recovery diodes in 100 kHz+ switching applications |
| Softness factor S2 = 1 | Eliminates reverse recovery current tail, preventing voltage ringing and MOSFET/IGBT overvoltage stress |
| 120 µm thin die | Improves thermal transient response and reduces mechanical stress during thermal cycling in power modules |
Applications
| Industrial Motor Drives | Server PSU Resonant Rectification |
|---|---|
Use Scenario: IGBT freewheeling path in 3-phase inverter stage of HVAC compressors operating at 8–20 kHz. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode absorbing inductive energy during IGBT turn-off. Use Value: Soft recovery (S2 = 1) prevents voltage spikes exceeding 1200 V rating, eliminating need for RC snubbers and reducing system BOM count. | Use Scenario: Secondary-side synchronous rectification in 3.3 kW server LLC resonant converter with 300–500 kHz switching. IC Role / Device Role / Timing Role: High-efficiency unidirectional current path replacing MOSFETs in high-VF secondary winding. Use Value: Low Qrr (5.1 µC) minimizes turn-off loss contribution at high frequency, improving full-load efficiency by 0.4–0.6% over standard FRDs. |
| Solar Inverter Boost Stage | UPS Output Rectifier Module |
Use Scenario: Boost diode in 1000 V DC-link photovoltaic string inverters with 16–25 kHz PWM modulation. IC Role / Device Role / Timing Role: High-voltage, high-current rectifier conducting during MOSFET off-time in interleaved boost converters. Use Value: 1200 V VRRM and –55 to +150 °C Tj range ensure reliable operation under desert ambient and self-heating conditions without derating. | Use Scenario: Output rectifier in double-conversion online UPS with 6–12 kVA rating and forced-air cooling. IC Role / Device Role / Timing Role: Main DC output diode handling continuous 25 A load current with 50 A surge capability (IFRM). Use Value: 50 A IFRM rating supports 200% overload for 10 s, meeting UL 1778 hold-time requirements without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode chip applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD120-12N1 | 1200 V, 120 A module-integrated diode; larger die, higher IF but no Qrr or softness spec published | Designed for press-pack and bolt-down module integration; not bare-die compatible | Select when module-level assembly is required and die-level bonding is not feasible |
| STMicroelectronics STTH3012D | Bare die variant unavailable; TO-247 packaged part with VF = 1.85 V @ 30 A and Qrr = 7.2 µC @ 125 °C | Lower voltage margin (1200 V same), but higher conduction and switching loss due to higher VF and Qrr | Select only for prototyping with through-hole assembly; not suitable for high-density module integration |
Compared with MDD120-12N1 and STTH3012D, SIDC14D120H6X1SA1 uniquely offers bare-die form factor with documented softness (S2 = 1) and low Qrr (5.1 µC), making it the only option qualified for high-reliability, space-constrained resonant converter modules requiring controlled recovery dynamics.
Availability
SIDC14D120H6X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar inverter boost stages, server PSU resonant rectification, and UPS output rectifier modules requiring stable component supply and traceable die-level sourcing.
Supply support for SIDC14D120H6X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.
SIDC14D120H6X1SA1 belongs to Infineon's EMCON fast-recovery diode chip product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial and renewable energy systems where soft switching and thermal robustness are mandatory.
FAQ
Is SIDC14D120H6X1SA1 supplied in tape-and-reel or waffle pack?
No - SIDC14D120H6X1SA1 is delivered as bare die on foil, pre-sawn and ink-marked, in sealed nitrogen-filled containers per Infineon's storage specification (<6 months at 23 °C). It is not offered in tape-and-reel or waffle pack formats, as it is designed exclusively for automated die-attach in hybrid modules or discrete power assemblies.
What die attach methods are qualified for SIDC14D120H6X1SA1?
Infineon qualifies both electrically conductive adhesive (silver-filled epoxy) and soft solder (SnPb or Pb-free alloys) for anode-side die attachment. Cathode-side bonding requires direct metallurgical contact to a Ni-plated or Ag-plated heatsink or substrate; no additional adhesive is needed on the cathode surface.
Does SIDC14D120H6X1SA1 have JEDEC qualification data?
No - as a bare die product, SIDC14D120H6X1SA1 does not undergo JEDEC package-level qualification (e.g., JESD22-A108, A113). Instead, its reliability is validated per Infineon's internal die-level qualification standards including HTGB, HTRB, and temperature cycling on wafer and diced die, documented in EUPEC reliability reports.
Can SIDC14D120H6X1SA1 be used in automotive applications?
Not without additional qualification - while its –55 to +150 °C Tj range meets automotive ambient requirements, SIDC14D120H6X1SA1 is not AEC-Q101 qualified and lacks automotive-specific failure analysis reporting. It is approved for industrial and renewable energy use only; automotive deployment requires customer-led requalification per AEC-Q101 Rev D.
SIDC14D120H6X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 25A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 25 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -55°C ~ 150°C
SIDC14D120H6X1SA1 FAQ
1.How can I place an order for SIDC14D120H6X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC14D120H6X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC14D120H6X1SA1 reliable?
The price and inventory of SIDC14D120H6X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC14D120H6X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC14D120H6X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC14D120H6X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC14D120H6X1SA1?
SIDC14D120H6X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC14D120H6X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC14D120H6X1SA1?
For technical support, including SIDC14D120H6X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC14D120H6X1SA1 requirements.
6.How does Aetrix verify that SIDC14D120H6X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC14D120H6X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC14D120H6X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC14D120H6X1SA1?
All SIDC14D120H6X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC14D120H6X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC14D120H6X1SA1 part is unused and in its original packaging.
Return procedure for SIDC14D120H6X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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