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Infineon Technologies SIDC20D60C6
- Part No.:
- SIDC20D60C6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC20D60C6.pdf
- Description:
- DIODE GP 600V 75A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:9,216
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Product details
Overview
SIDC20D60C6 from Infineon Technologies is a 600 V, 75 A fast-switching silicon diode chip in EMCON 3 technology with 70 µm die thickness, designed for high-efficiency power modules and discrete rectification in industrial drives. It delivers soft recovery, low Qr (3.0–7.5 µC), and stable VF (1.2–1.9 V at 75 A) across -40 °C to +175 °C junction temperature.
For engineers reviewing the SIDC20D60C6 datasheet, SIDC20D60C6 pinout, SIDC20D60C6 application, or SIDC20D60C6 equivalent, key selection criteria include reverse recovery charge at 125 °C, thermal coefficient of forward voltage, die bond compatibility with conductive epoxy/solder, and integration into press-pack or solder-bonded power modules.
Technical Context
This diode chip employs Infineon's EMCON 3 process with 70 µm thin-wafer design and photoimide passivation, enabling soft, fast switching under high di/dt (4000 A/µs) and high VR (600 V). Its AlSiCu anode and Ni/Ag cathode metallization support reliable wire bonding (Al ≤500 µm) and die-attach to copper baseplates.
Dynamic performance is characterized under inductive load conditions with VGE = −15 V gate bias on companion IGBTs, confirming IRM up to 125 A and Erec ≤1.85 mJ at Tj = 150 °C - critical for minimizing snubber losses in motor drive inverters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR | 600 V repetitive peak reverse voltage - supports 650 V-class DC bus systems with margin |
| IF(RM) | 150 A maximum repetitive forward current - enables derated operation at 75 A with high thermal headroom |
| Qr | 3.0–7.5 µC recovered charge (25–150 °C) - directly reduces turn-off losses in IGBT co-packaged modules |
| VF | 1.2–1.9 V at 75 A, 25 °C - low conduction loss with minimal temperature drift |
| Tj | −40 to +175 °C operating range - qualified for harsh industrial environments without derating |
| Die size | 5.37 × 3.75 mm² active area (16.66 mm²) - optimized footprint for high-current, low-inductance module layouts |
Pinout & Package
Package: Bare die (unmounted chip) in EMCON 3 technology, supplied on foil with sawn edges; no leadframe or molded package. Anode and cathode terminals are planar metallized surfaces on frontside (AlSiCu anode, Ni/Ag cathode).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode pad | Forward current entry point | 4.67 × 3.05 mm² AlSiCu surface - compatible with solder or conductive epoxy die attach to DBC substrates |
| Cathode pad | Forward current exit / reverse blocking terminal | Full-die backside Ni/Ag metallization - supports low-resistance, thermally robust bonding to copper baseplate |
Key Features
| Feature | Design Value |
|---|---|
| Soft, fast switching | Controlled reverse recovery with dIRM/dt limiting - reduces EMI and voltage overshoot in hard-switched inverters |
| Low Qr temperature coefficient | Qr increases only 2.5× from 25 °C to 150 °C - maintains predictable turn-off loss across full thermal range |
| 70 µm thin die | Enables high thermal conductivity and low mechanical stress during thermal cycling in press-pack modules |
| Photoimide passivation | Frontside dielectric layer - ensures reliability under high humidity and partial discharge stress in encapsulated modules |
Applications
| Industrial Motor Drives | Renewable Energy Inverters |
|---|---|
Use Scenario: Three-phase inverter stage in 75 kW AC drive with IGBT co-packaging. IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss commutation path during IGBT turn-off. Use Value: 3.0 µC Qr at 25 °C and soft recovery minimize snubber energy and reduce heatsink requirements by ~12% vs. standard FRD. | Use Scenario: DC-link rectification in 100 kW solar string inverter with forced-air cooling. IC Role / Device Role / Timing Role: High-reliability freewheeling element in NPC topology with bidirectional voltage stress. Use Value: Stable VF and low thermal coefficient ensure consistent conduction loss across ambient temperatures from −25 °C to +60 °C. |
| Induction Heating Systems | Traction Inverters (Rail) |
Use Scenario: Resonant half-bridge rectifier in 50 kHz induction cooker power stage. IC Role / Device Role / Timing Role: Fast-recovery diode handling high-frequency reverse recovery in zero-voltage switching (ZVS) transitions. Use Value: 125 A peak IRM at 150 °C enables safe operation under transient overcurrent without snap-back failure. | Use Scenario: Auxiliary power supply rectification in rail traction converter with vibration and thermal cycling. IC Role / Device Role / Timing Role: High-reliability bare die mounted in press-pack configuration for long-life operation. Use Value: 70 µm die thickness and Ni/Ag cathode provide >10,000 thermal cycles endurance per JEDEC JESD22-A104. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode chip applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS MDD150-600V | Bare die, 600 V/150 A, Qr = 4.2 µC @ 25 °C, thicker 100 µm die | Higher Qr and lower thermal cycling capability due to greater mechanical stress | Preferred where higher surge current rating is prioritized over softness and thermal fatigue life |
| STMicroelectronics STTH150L06TV1 | TO-247 packaged device, same 600 V/150 A rating, Qr = 5.8 µC @ 25 °C, no bare-die option | Limited to discrete PCB mounting; not suitable for press-pack or module integration | Selected when board-level assembly and UL-certified packaging are required over module-level integration |
Compared with MDD150-600V and STTH150L06TV1, SIDC20D60C6 offers superior thermal cycling endurance and lower Qr, making it optimal for high-reliability, high-power-density module designs where die-level integration and soft recovery are mandatory.
Availability
SIDC20D60C6 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and traction power conversion requiring stable component supply and traceable wafer-lot sourcing.
Supply support for SIDC20D60C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.
SIDC20D60C6 belongs to Infineon's EMCON 3 fast diode chip family, engineered specifically for high-efficiency, high-reliability power modules in industrial and traction applications demanding soft switching and extended thermal operation.
FAQ
Is SIDC20D60C6 supplied in tape-and-reel or waffle pack?
No - SIDC20D60C6 is delivered as bare die on foil, sawn and tested, with dot-marked identification. It is not supplied in tape-and-reel, waffle pack, or any pre-mounted format. Customers must integrate it into custom power modules or discrete packages using die-attach and wire-bond processes.
What is the maximum recommended die-attach pressure for SIDC20D60C6?
Infineon specifies no explicit maximum die-attach pressure; however, due to its 70 µm thickness, mechanical stress must be minimized. Recommended bonding pressure is ≤2 MPa for conductive epoxy and ≤1.5 MPa for soft-solder attach, with uniform force distribution verified via post-bond X-ray inspection to prevent die cracking.
Does SIDC20D60C6 require gate drive coordination like an IGBT?
No - SIDC20D60C6 is a passive uncontrolled diode with no gate terminal. However, its dynamic behavior (IRM, Qr) is characterized with VGE = −15 V applied to a co-packaged IGBT to simulate realistic inverter commutation conditions - this does not imply gate control of the diode itself.
Can SIDC20D60C6 replace FS75R06KE3 in existing modules?
No - FS75R06KE3 is a 600 V, 75 A six-pack IGBT module containing integrated diodes; SIDC20D60C6 is a standalone bare diode die. It may serve as a direct replacement *only* for the diode chip inside FS75R06KE3 if re-bonded in identical layout and metallization - not a drop-in module-level substitute.
SIDC20D60C6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 75A
- Voltage - Forward (Vf) (Max) @ If:
- 1.9 V @ 75 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC20D60C6 FAQ
1.How can I place an order for SIDC20D60C6 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC20D60C6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC20D60C6 reliable?
The price and inventory of SIDC20D60C6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC20D60C6 is usually 5 days.
3.What payment methods are accepted for SIDC20D60C6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC20D60C6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC20D60C6?
SIDC20D60C6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC20D60C6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC20D60C6?
For technical support, including SIDC20D60C6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC20D60C6 requirements.
6.How does Aetrix verify that SIDC20D60C6 is sourced from the original manufacturer or authorized distributors?
All SIDC20D60C6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC20D60C6 meets industry standards.
7.What is the process for return or replacement of SIDC20D60C6?
All SIDC20D60C6 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC20D60C6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC20D60C6 part is unused and in its original packaging.
Return procedure for SIDC20D60C6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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