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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDD12SG60CXTMA2

Name: IDD12SG60CXTMA2
Brand: Infineon Technologies
SKU: IDD12SG60CXTMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDD12SG60CXTMA2

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IDD12SG60CXTMA2.pdf

Description:: DIODE SIL CARB 600V 12A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IDD12SG60CXTMA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage, 12 A continuous forward current at T_C < 130 °C, and features zero reverse recovery charge (Q_C = 19 nC), <10 ns capacitive switching time, and 1.2 K/W junction-to-case thermal resistance. It is deployed in high-efficiency CCM PFC stages of server PSUs.

For engineers reviewing the IDD12SG60CXTMA2 datasheet, IDD12SG60CXTMA2 pinout, IDD12SG60CXTMA2 application, or IDD12SG60CXTMA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, temperature-independent switching, surge robustness (I_F,max = 430 A), low V_F (1.8–2.2 V), and PG-TO252-3 package compatibility with high-power SMD layouts.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (t_rr) or forward recovery-only capacitive displacement current with t_c < 10 ns. Its Q_C is fixed at 19 nC and independent of temperature, load current, or di/dt.

Thermal design leverages a low R_thJC of 1.2 K/W and operates up to T_j = 175 °C. The device sustains 600 V DC blocking at I_R ≤ 100 µA (T_j = 25 °C) and maintains stable V_F across –55 to +175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V AC input rectification with 50% safety margin in industrial PFC designs
I_F (cont.)	12 A @ T_C < 130 °C - enables compact heatsinking in space-constrained 1–3 kW converters
Q_C	19 nC - defines total capacitive charge loss during turn-off; directly impacts E_off in hard-switched topologies
V_F	1.8–2.2 V @ 12 A - lower conduction loss vs. Si counterparts, especially above 100 °C
R_thJC	1.2 K/W - allows direct thermal coupling to copper pour or heatsink for >100 W power dissipation
t_c	<10 ns - sets upper bound on capacitive switching transition; enables >1 MHz operation without snubbers
I_F,max	430 A @ 10 µs - withstands short-circuit events in motor drives and UPS inverters

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	No connection	Electrically isolated; must not be soldered or routed to avoid parasitic coupling
Pin 2	Anode	Connects to AC/low-side node in bridge rectifier or PFC boost leg; carries full load current
Pin 3	Cathode	High-current return path to DC bus; requires ≥6 cm² copper pour for R_thJA = 50 K/W

Key Features

Feature	Design Value
Zero reverse recovery	Eliminates t_rr-related switching losses and EMI in hard-switched converters
Temperature-stable Q_C	19 nC remains constant from –55 to +175 °C, enabling predictable loss modeling
High dv/dt ruggedness	50 V/ns rating prevents false triggering in fast-rising gate-drive environments
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 for automotive and industrial reflow profiles (MSL1, 260 °C)
Low figure-of-merit (Q_C/I_F)	1.58 nC/A - benchmark for high-frequency SiC diode efficiency in PFC and solar inverters

Applications

Server Power Supply PFC Stage

Solar Inverter DC Link

Use Scenario: Continuous Conduction Mode (CCM) boost PFC in 2–3 kW telecom/server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage output rectifier replacing Si fast recovery diodes to eliminate reverse recovery loss.

Use Value: Reduces system conduction + switching losses by 15–20%, enabling 96%+ efficiency at full load.

Use Scenario: DC-link freewheeling path in 10–25 kW string inverters with bidirectional energy flow.

IC Role / Device Role / Timing Role: Bidirectional current-handling diode in H-bridge output stage, sustaining 600 V DC bus with 50 A peak current.

Use Value: Enables 100% duty-cycle operation without thermal runaway due to temperature-independent V_F and Q_C.

Industrial UPS Inverter

EV Onboard Charger Boost Stage

Use Scenario: Output rectification in double-conversion UPS inverters delivering clean 230 VAC under grid failure.

IC Role / Device Role / Timing Role: High-surge-capable freewheeling diode handling 430 A non-repetitive peaks during fault transients.

Use Value: Survives 10 µs short-circuit events without degradation, improving system fault tolerance.

Use Scenario: Boost diode in 6.6 kW OBCs converting 200–450 V battery range to 800 V DC link for fast charging.

IC Role / Device Role / Timing Role: High-voltage, high-temperature rectifier operating continuously at T_j = 150–175 °C.

Use Value: Maintains 2.2 V V_F at 150 °C-15% lower than Si alternatives-reducing thermal stress on heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10060A	10 A rating, same 600 V V_RRM, Q_C = 16 nC, R_thJC = 1.5 K/W	Lower current capacity limits use in >1.5 kW PFC; better suited for auxiliary supplies	Select when board space is constrained and peak current stays below 10 A
SS12060	12 A rating, 600 V V_RRM, Q_C = 22 nC, V_F = 1.95 V (typ.), TO-220AC package	Through-hole mounting; higher R_thJA limits high-frequency thermal cycling reliability	Select only for legacy through-hole designs where rework cost exceeds redesign effort

Compared with C3D10060A and SS12060, IDD12SG60CXTMA2 delivers optimal balance of current rating, thermal resistance, and capacitive charge for high-density, high-frequency PFC and inverter designs requiring surface-mount scalability and 175 °C junction operation.

Availability

ID12SG60CXTMA2 is available at Aetrix Electronics and suitable for server power supplies, solar inverters, industrial UPS systems, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IDD12SG60CXTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in PFC, solar, and UPS applications.

FAQ

Is IDD12SG60CXTMA2 suitable for synchronous rectification?

No. This is a unidirectional Schottky diode with anode and cathode terminals only-it lacks gate control and cannot function as a synchronous rectifier. It serves as a passive, high-speed freewheeling or output rectifier in non-controlled topologies like boost PFC or inverter DC links.

What is the maximum allowable PCB copper area for optimal thermal performance?

For R_thJA = 50 K/W, the datasheet specifies a 6 cm² single-layer (70 µm thick) copper area on FR4 PCB, vertically mounted without forced air. Larger areas yield diminishing returns; exceeding 10 cm² adds negligible improvement beyond 45 K/W.

Does this diode require a gate driver or external bias circuit?

No. As a passive two-terminal Schottky diode, IDD12SG60CXTMA2 requires no gate drive, bias, or control signals. It conducts when forward-biased and blocks when reverse-biased-no external circuitry is needed beyond standard layout practices for high-di/dt paths.

Can it replace a 600 V Si fast recovery diode in existing designs?

Yes-with layout review. Its lower V_F and zero t_rr reduce losses, but its faster dv/dt demands tighter snubberless layout: minimize loop inductance, avoid floating traces near Pin 1, and ensure solid cathode grounding to prevent oscillation or EMI.

IDD12SG60CXTMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 2.1 V @ 12 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 100 µA @ 600 V

Capacitance @ Vr, F:: 310pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

Operating Temperature - Junction:: -55°C ~ 175°C

IDD12SG60CXTMA2 FAQ

1.How can I place an order for IDD12SG60CXTMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDD12SG60CXTMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDD12SG60CXTMA2 reliable?

The price and inventory of IDD12SG60CXTMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD12SG60CXTMA2 is usually 5 days.

3.What payment methods are accepted for IDD12SG60CXTMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD12SG60CXTMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDD12SG60CXTMA2?

IDD12SG60CXTMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDD12SG60CXTMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDD12SG60CXTMA2?

For technical support, including IDD12SG60CXTMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD12SG60CXTMA2 requirements.

6.How does Aetrix verify that IDD12SG60CXTMA2 is sourced from the original manufacturer or authorized distributors?

All IDD12SG60CXTMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD12SG60CXTMA2 meets industry standards.

7.What is the process for return or replacement of IDD12SG60CXTMA2?

All IDD12SG60CXTMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDD12SG60CXTMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDD12SG60CXTMA2 part is unused and in its original packaging.

Return procedure for IDD12SG60CXTMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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