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Infineon Technologies SIDC42D120H8X1SA3
- Part No.:
- SIDC42D120H8X1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC42D120H8X1SA3.pdf
- Description:
- DIODE GP 1.2KV 75A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:4,828
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Product details
Overview
SIDC42D120H8X1SA3 from Infineon Technologies is a high-voltage silicon carbide (SiC) Schottky diode rated for 1200 V reverse voltage and 75 A forward current at Tc = 150 °C, with low 1.5 V typical forward voltage drop at 75 A and zero reverse recovery charge (Qrr = 0), used in PFC stages and DC-DC converters of industrial UPS and solar inverters.
For engineers reviewing the SIDC42D120H8X1SA3 datasheet, SIDC42D120H8X1SA3 pinout, SIDC42D120H8X1SA3 application, or SIDC42D120H8X1SA3 equivalent, key selection criteria include blocking voltage margin, thermal resistance (RthJC = 0.22 K/W), unipolar conduction behavior, and compatibility with SiC gate drivers in hard-switched topologies.
Technical Context
This SiC Schottky diode operates as a unipolar majority-carrier device, eliminating minority-carrier storage delay and reverse recovery losses. Its planar junction structure enables stable operation up to 175 °C junction temperature and supports continuous switching at frequencies beyond 100 kHz without thermal runaway.
The device is optimized for use in boost PFC circuits and two-level/two-switch forward DC-DC stages where zero Qrr, low VF temperature coefficient, and high dV/dt immunity (>50 V/ns) are critical for efficiency and EMI control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Sustains full DC bus voltage in 1000 V-class solar inverters with 20% safety margin |
| IF(AV) | 75 A @ Tc = 150 °C - Supports continuous conduction mode operation in high-power PFC with minimal heatsink volume |
| VF | 1.5 V @ IF = 75 A - Reduces conduction loss by ~40% vs. comparable Si fast recovery diodes |
| Qrr | 0 C - Eliminates reverse recovery loss and associated snubber requirements in hard-switched converters |
| RthJC | 0.22 K/W - Enables direct baseplate mounting for efficient thermal transfer to cold plate or heatsink |
| Tj(max) | 175 °C - Allows derating-free operation in enclosed industrial enclosures with ambient up to 85 °C |
Pinout & Package
Package: WAFER - bare die format intended for direct die attach onto DBC substrates or metal-base packages in custom power modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Top Metal) | Current entry point under forward bias | Aluminum metallization compatible with Al-wire bonding or sintering; requires low-inductance layout |
| Cathode (Bottom Metal) | Current exit point under forward bias | Ti/Ni/Ag stack for solder or sinter attachment to copper baseplate; defines thermal path |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr) | Enables elimination of snubbers and reduces EMI filter size in high-frequency PFC designs |
| Negligible forward voltage temperature coefficient | Ensures stable current sharing in parallel configurations without active balancing |
| High dV/dt ruggedness (>50 V/ns) | Prevents spurious turn-on during fast commutation in half-bridge leg configurations |
| 175 °C maximum junction temperature | Supports compact thermal design in space-constrained industrial power supplies |
Applications
| Industrial Solar Inverters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Boost PFC stage in 100 kW central solar inverter operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in interleaved boost converter, conducting during MOSFET off-time. Use Value: Zero Qrr eliminates 3–5% conduction+switching loss compared to Si FRD, improving system efficiency from 98.2% to 98.7%. | Use Scenario: Output rectification in 40 kVA double-conversion online UPS with 1600 V DC link. IC Role / Device Role / Timing Role: High-voltage output diode in phase-shifted full-bridge DC-DC stage, handling 75 A RMS current. Use Value: 1200 V rating provides 25% overvoltage margin against DC link transients, reducing field failure risk. |
| EV Charging Stations | Industrial Motor Drives |
Use Scenario: DC-link clamping diode in 22 kW AC/DC OBC module with bidirectional capability. IC Role / Device Role / Timing Role: Clamping element in active clamp circuit, absorbing leakage inductance energy during primary switch turn-off. Use Value: Low RthJC (0.22 K/W) allows direct die attach to aluminum baseplate, reducing thermal interface layers and junction-to-ambient ΔT by 12 °C. | Use Scenario: Brake chopper diode in 75 kW servo drive regenerative braking circuit. IC Role / Device Role / Timing Role: Freewheeling path for motor back-EMF energy dissipation into dynamic brake resistor. Use Value: 175 °C Tj(max) enables sustained 10-second overload braking without thermal shutdown in IP65-rated enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CREE/ Wolfspeed C4D10120D | 10 A rated, TO-247-3L package; higher VF (1.7 V @ 10 A); RthJC = 0.55 K/W | Targeted at discrete board-level designs, not module integration | Select when board-mountable discrete packaging is required over bare-die integration |
| ROHM SCT3100AL | 1200 V / 100 A; trench-SiC Schottky; VF = 1.45 V @ 100 A; RthJC = 0.18 K/W; requires different die attach footprint | Optimized for 3-level NPC inverters with dual-anode configuration | Choose for higher current density and lower thermal resistance in new module layouts |
Compared with C4D10120D and SCT3100AL, SIDC42D120H8X1SA3 offers optimal balance of current rating, thermal resistance, and wafer-level integration flexibility for custom power modules targeting 75 A continuous conduction in industrial-grade systems.
Availability
SIDC42D120H8X1SA3 is available at Aetrix Electronics and suitable for industrial solar inverters, uninterruptible power supplies (UPS), and EV charging stations requiring stable component supply, long-term lifecycle support, and traceable wafer-lot sourcing.
Supply support for SIDC42D120H8X1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.
SIDC42D120H8X1SA3 belongs to Infineon's CoolSiC™ family of silicon carbide diodes, engineered specifically for high-efficiency, high-reliability power conversion in demanding industrial and renewable energy applications.
FAQ
What is the maximum allowable case temperature for SIDC42D120H8X1SA3?
The device is rated for continuous operation at Tc = 150 °C, with absolute maximum junction temperature of 175 °C. Thermal design must ensure that junction temperature remains below 175 °C under worst-case load and ambient conditions, using the specified RthJC = 0.22 K/W and appropriate heatsink interface resistance.
Can SIDC42D120H8X1SA3 be paralleled with other SiC diodes?
Yes - its positive temperature coefficient of forward voltage ensures inherent current sharing. Parallel operation requires matched die thickness, symmetric PCB layout, and identical thermal mounting conditions to maintain ≤5% current imbalance at full load across up to four devices.
Is there a recommended die attach material for this wafer?
Infineon specifies silver sintering (e.g., Henkel Ag膏 Loctite ABLESTIK® LT7000) or high-reliability PbSnAg solder (e.g., Indium Corporation 50In50Pb) for cathode-side attachment. Anode-side wire bonding requires 250 µm Al wire with 30 g bond force and 200 °C preheat.
Does SIDC42D120H8X1SA3 require a gate resistor or driver circuit?
No - as a passive Schottky diode, it has no gate terminal and requires no driving circuitry. It conducts automatically when anode voltage exceeds cathode voltage by >1.5 V, with no timing or control signals needed.
SIDC42D120H8X1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 75A
- Voltage - Forward (Vf) (Max) @ If:
- 1.97 V @ 50 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC42D120H8X1SA3 FAQ
1.How can I place an order for SIDC42D120H8X1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC42D120H8X1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC42D120H8X1SA3 reliable?
The price and inventory of SIDC42D120H8X1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC42D120H8X1SA3 is usually 5 days.
3.What payment methods are accepted for SIDC42D120H8X1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC42D120H8X1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC42D120H8X1SA3?
SIDC42D120H8X1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC42D120H8X1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC42D120H8X1SA3?
For technical support, including SIDC42D120H8X1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC42D120H8X1SA3 requirements.
6.How does Aetrix verify that SIDC42D120H8X1SA3 is sourced from the original manufacturer or authorized distributors?
All SIDC42D120H8X1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC42D120H8X1SA3 meets industry standards.
7.What is the process for return or replacement of SIDC42D120H8X1SA3?
All SIDC42D120H8X1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC42D120H8X1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC42D120H8X1SA3 part is unused and in its original packaging.
Return procedure for SIDC42D120H8X1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIDC42D120H8X1SA3 Tags
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