Infineon Technologies AIDK16S65C5ATMA1

Overview

AIDK16S65C5ATMA1 from Infineon is a 650 V / 16 A silicon carbide Schottky diode in D2PAK (PG-TO263-2-1) package, designed as a unidirectional high-voltage freewheeling/anti-parallel device for automotive traction inverters and on-board chargers. It features zero reverse recovery charge (Q_rr = 0), 175 °C max junction temperature, 23 nC total capacitive charge at 400 V, and 5.3 μJ stored energy - enabling high-frequency PFC stages in EV power electronics.

For engineers reviewing the AIDK16S65C5ATMA1 datasheet, AIDK16S65C5ATMA1 pinout, AIDK16S65C5ATMA1 application, or AIDK16S65C5ATMA1 equivalent, key selection criteria include its SiC-specific thermal robustness (R_thJC = 1.5–1.9 K/W), absence of minority-carrier switching losses, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This 5th-generation CoolSiC™ diode uses thin-wafer SiC epitaxy to achieve low forward voltage (V_F = 1.5–1.8 V @ 16 A, 25 °C) while maintaining 650 V blocking capability and 100 V/ns dv/dt ruggedness. Its Schottky barrier architecture eliminates reverse recovery, enabling hard-switched topologies without snubbers.

Thermal design is enabled by direct die-to-case conduction via the D2PAK's exposed cathode tab (Pin 1), supporting continuous 16 A operation at T_C ≤ 124 °C and transient surge currents up to 637 A (10 μs). Junction temperature range spans −40 °C to +175 °C with full characterization across that range.

Key Specifications

Pinout & Package

Package: PG-TO263-2-1 (D2PAK), surface-mount, thermally enhanced with exposed cathode pad (Pin 1). Real 2-pin configuration: no gate or sense terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C4D15120A and SCT3100AL, AIDK16S65C5ATMA1 uniquely delivers automotive-qualified 16 A current handling in D2PAK with lowest Q_C/V_F trade-off in its class - critical for minimizing EMI and thermal stress in compact OBC modules.

Availability

AIDK16S65C5ATMA1 is available at Aetrix Electronics and suitable for on-board chargers, traction inverters, and high-voltage DC-DC converters requiring stable component supply with AEC-Q101 compliance and extended temperature operation.

Supply support for AIDK16S65C5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The CoolSiC™ Automotive Schottky Diode product line targets high-efficiency, high-reliability power conversion in electric vehicles - specifically engineered to replace silicon diodes in 650 V traction and charging systems while enabling higher switching frequencies and reduced thermal overhead.

FAQ

Is AIDK16S65C5ATMA1 pin-compatible with standard D2PAK silicon diodes?

Yes - it uses the industry-standard PG-TO263-2-1 footprint with identical mounting hole pattern and pad layout. However, its thermal pad (Pin 1/cathode) requires full-surface soldering to a large copper pour for optimal R_thJC performance, unlike many Si diodes that tolerate partial pad attachment.

What is the maximum allowable case temperature for continuous 16 A operation?

The datasheet specifies I_F = 16 A is rated at T_C ≤ 124 °C. Operation above this temperature requires linear derating per Figure 2 in the datasheet; at T_C = 150 °C, maximum continuous current drops to approximately 10.5 A to maintain T_j ≤ 175 °C.

Does AIDK16S65C5ATMA1 require a gate resistor or external snubber network?

No - as a Schottky diode, it has no gate terminal and exhibits no reverse recovery. Snubbers are unnecessary for typical 650 V, 100 V/ns switching conditions. Only parasitic layout inductance mitigation (short traces, ground plane) is required to control voltage overshoot during di/dt transients.

How does its stored energy (E_C) impact EMI in high-frequency PFC designs?

At 5.3 μJ (measured at 400 V), E_C directly contributes to high-frequency ringing during turn-off. Combined with low Q_C (23 nC), this enables clean voltage transitions below 30 MHz - reducing conducted EMI filter size by ~25% compared to Si diodes with equivalent V_RRM.