Infineon Technologies SIDC24D30SIC3

Overview

SIDC24D30SIC3 from Infineon Technologies is a silicon carbide Schottky diode designed for high-frequency secondary-side rectification and snubber circuits in SMPS. It delivers 300 V repetitive peak reverse voltage, 10 A continuous forward current at T_jmax, and zero reverse recovery charge (Q_C = 23 nC at T_j = 150 °C), enabling ultra-fast switching with no temperature-dependent switching behavior.

For engineers reviewing the SIDC24D30SIC3 datasheet, SIDC24D30SIC3 pinout, SIDC24D30SIC3 application, or SIDC24D30SIC3 equivalent, key selection criteria include its SiC-based zero-recovery performance, low forward voltage (V_F = 1.5–1.7 V @ 10 A), 40 pF capacitance at 300 V, and die-level packaging suitable for custom hybrid module integration.

Technical Context

This SiC Schottky diode operates without minority-carrier storage, eliminating reverse recovery current and associated switching losses. Its junction temperature range spans –55 °C to +175 °C, and dynamic characteristics-including 23 nC total capacitive charge and <600 ns switching time under 200 A/µs di/dt-are validated at 150 °C junction temperature.

The device uses aluminum anode (3200 nm) and nickel cathode (1400 nm) metallization on a 1.706 × 1.38 mm² SiC die, passivated with photoimide. It is rated for 36 A single-pulse surge (10 ms sinusoidal) and 100 A non-repetitive peak forward current (10 µs pulse), supporting robust transient handling in hard-switched topologies.

Key Specifications

Pinout & Package

Package: Bare die (unmounted chip) in sawn-on-foil format, Q67050-A4163-A103. Dimensions: 1.706 × 1.38 mm², thickness 355 µm. Anode pad: 1.405 × 1.08 mm². No leadframe or molded package - intended for direct die attach in hybrid modules or discrete PCB assembly using conductive epoxy or solder.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and SDP10S30, SIDC24D30SIC3 offers lowest thermal resistance and highest layout flexibility for custom power modules, while SDP10S30 provides drop-in convenience and C3D10065A extends voltage headroom at the cost of size and high-frequency performance.

Availability

SIDC24D30SIC3 is available at Aetrix Electronics and suitable for high-efficiency server PSUs, industrial SMPS snubbers, and EV onboard charger auxiliary rectification requiring stable component supply and traceable bare-die sourcing.

Supply support for SIDC24D30SIC3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and wafer fabrication facilities.

SIDC24D30SIC3 belongs to Infineon's CoolSiC™ discrete diode product line, engineered specifically for high-frequency, high-temperature power conversion where Si limitations in speed and thermal stability are critical.

FAQ

Is SIDC24D30SIC3 a packaged component or bare die?

SIDC24D30SIC3 is a bare silicon carbide die supplied on foil, with no leadframe or encapsulation. It measures 1.706 × 1.38 mm² and requires die-attach via conductive epoxy or solder onto DBC substrates or metal-core PCBs. The ordering code Q67050-A4163-A103 confirms its die-only format per Infineon's HV3 documentation.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is +175 °C, and continuous forward current (I_F = 10 A) is specified at this T_jmax. Derating is required above 100 °C case temperature per the thermal resistance curve in the device data sheet SDP10S30, which shares identical die characteristics and thermal behavior.

Can SIDC24D30SIC3 replace standard silicon fast recovery diodes directly?

Yes - electrically, it replaces Si FRDs in secondary rectification and snubber roles with identical voltage/current ratings. However, mechanical integration differs: it requires die-level assembly rather than through-hole or SMD placement. Thermal and layout optimization is essential due to its zero-recovery behavior altering snubber and gate-drive dynamics.

Does SIDC24D30SIC3 require special ESD handling?

Yes - it is classified as an electrostatic discharge sensitive device per MIL-STD-883. Handling requires grounded workstations, ionized air, and ESD-safe packaging. The photoimide passivation layer is robust, but gate oxide-like vulnerability exists at the SiC/metal interface; uncontrolled discharge can cause latent junction damage undetectable in routine parametric test.