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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies SIDC50D60C6X1SA1

Name: SIDC50D60C6X1SA1
Brand: Infineon Technologies
SKU: SIDC50D60C6X1SA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIDC50D60C6X1SA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: Die

Datasheet:: SIDC50D60C6X1SA1.pdf

Description:: DIODE GP 600V 200A WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:5,707

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Product details

Overview

SIDC50D60C6X1SA1 from Infineon Technologies is a 600 V, 200 A fast-switching silicon power diode chip in EMCON 3 technology, designed as the freewheeling diode in IGBT-based power modules for industrial motor drives. It features 70 µm die thickness, soft reverse recovery (Q_r = 10.0 µC @ T_j = 25 °C), low forward voltage (V_F = 1.6 V typ. @ 200 A), and a die size of 9.2 × 5.44 mm².

For engineers reviewing the SIDC50D60C6X1SA1 datasheet, SIDC50D60C6X1SA1 pinout (anode/cathode terminals only), SIDC50D60C6X1SA1 application in power module assembly, or SIDC50D60C6X1SA1 equivalent for high-current freewheeling use, this page delivers verified chip-level specifications, thermal and dynamic recovery behavior, package interface details, and direct alternatives validated for module integration.

Technical Context

This die is engineered for co-packaging with 600 V IGBTs (e.g., FS200R06KE3) in press-pack or solder-bonded modules. Its EMCON 3 process enables soft, controlled reverse recovery with low dI/dt-induced voltage overshoot and minimal E_rec (3.00 mJ @ 25 °C).

Rated for continuous forward current up to 400 A (thermal-limited), it operates across –40 °C to +175 °C junction temperature, with cathode metallization (Ni/Ag) and anode metallization (AlSiCu) optimized for epoxy or soft-solder die attachment and Al wire bonding (≤500 µm).

Key Specifications

Parameter	Value and Actual Design Meaning
V_R	600 V - Maximum repetitive reverse blocking voltage; defines safe operation in 600 V DC-link applications.
I_F	200 A - Rated forward current at T_j = 25 °C; used for derating calculations in module thermal design.
V_F	1.6 V typ. @ 200 A - Forward voltage drop directly impacts conduction loss and module efficiency at rated load.
Q_r	10.0 µC @ 25 °C - Recovered charge during turn-off; lower value reduces switching loss and EMI in hard-switched inverters.
E_rec	3.00 mJ @ 25 °C - Reverse recovery energy; critical for snubber sizing and IGBT stress analysis in inductive loads.
T_j range	–40 to +175 °C - Wide operating junction temperature supports high-power density module packaging without active cooling constraints.
Die size	9.2 × 5.44 mm² - Physical footprint determines module layout compatibility and thermal spreading area under baseplate.

Pinout & Package

Package: Bare die (unencapsulated silicon chip) in EMCON 3 technology, supplied on foil with sawn edges. No leadframe or molded housing - intended for direct die-attach into power modules.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	AlSiCu metallized surface (8.52 × 4.74 mm²); compatible with soft solder or conductive epoxy die bonding.
Cathode	Forward current exit / reverse blocking terminal	Ni/Ag metallized surface; supports Al wire bonding (≤500 µm) and provides low-resistance return path in module stack.

Key Features

Feature	Design Value
Soft, fast switching	Controlled reverse recovery with I_RM = 160 A @ 25 °C and dI/dt = 5700 A/µs - minimizes voltage spikes and EMI in high-frequency inverters.
Low Q_r temperature coefficient	Q_r increases only 2× (10.0 → 20.0 µC) from 25 °C to 150 °C - ensures stable switching loss across full thermal range.
Thin 70 µm die	Enables high current density and improved thermal response; reduces stored charge and improves surge robustness.
Photoimide passivation	Frontside polymer layer provides mechanical protection and contamination resistance during module assembly and reflow.
ESD-sensitive handling	Classified per MIL-STD-883 - requires grounded workstations and ionized air during die placement to prevent gate oxide damage.

Applications

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: 3-phase inverter stage in 150–300 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: Freewheeling diode paired with 600 V IGBTs in six-pack module configuration.

Use Value: Soft recovery (Q_r = 10–20 µC) reduces IGBT turn-on stress and eliminates need for external snubbers.

Use Scenario: DC-link section of solar string inverters operating at 1000 V DC bus with 20 kHz PWM.

IC Role / Device Role / Timing Role: Anti-parallel diode in half-bridge IGBT modules handling bidirectional reactive power flow.

Use Value: Low V_F (1.6 V typ.) cuts conduction loss by >15% vs. standard fast recovery diodes at 200 A.

Electric Vehicle Traction Converters

Uninterruptible Power Supplies

Use Scenario: Auxiliary power conversion stage in onboard chargers requiring high reliability at 150 °C junction.

IC Role / Device Role / Timing Role: Output rectifier in isolated DC/DC stage co-packaged with SiC MOSFETs.

Use Value: T_j max = +175 °C enables compact heatsink design without forced air cooling.

Use Scenario: Static bypass switch and inverter output stage in 30–60 kVA online UPS systems.

IC Role / Device Role / Timing Role: Module-integrated freewheeling diode supporting 10 ms overload capability.

Use Value: High I_FRM = 400 A rating allows short-term overcurrent tolerance during battery discharge transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current freewheeling diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
FF400R06KE3	Integrated 600 V, 400 A dual IGBT/diode module; includes matched SIDC50D60C6 die plus IGBT chip.	Pre-assembled module replaces discrete die placement; eliminates wire bond and die attach steps.	Select when full module sourcing simplifies BOM and assembly; not suitable for custom hybrid module designs.
DD500S60K4	600 V, 500 A discrete diode in press-pack package; uses different soft-recovery process (TRENCHSTOP™), Q_r = 12.5 µC @ 25 °C.	Designed for bolt-down mounting in liquid-cooled stacks; no foil carrier or wire bond interface.	Select for high-reliability, maintenance-free systems where field replacement of bare die is impractical.

Compared with FF400R06KE3 and DD500S60K4, SIDC50D60C6X1SA1 offers maximum flexibility for custom power module integration, lowest Q_r among equivalents, and direct compatibility with Infineon's FS200R06KE3 IGBT pairing - making it optimal for OEMs designing proprietary inverter platforms.

Availability

SIDC50D60C6X1SA1 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and electric vehicle traction converters requiring stable component supply and long-term module production continuity.

Supply support for SIDC50D60C6X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

SIDC50D60C6X1SA1 belongs to Infineon's EMCON 3 fast diode chip family, developed specifically for high-efficiency, high-reliability power modules in demanding industrial drive and grid-connected inverter applications.

FAQ

Is SIDC50D60C6X1SA1 a packaged device or bare die?

SIDC50D60C6X1SA1 is a bare silicon die supplied on foil with sawn edges and no encapsulation. It has no leads, mold compound, or housing - intended exclusively for die-attach into power modules using conductive epoxy or soft solder. The anode and cathode surfaces are metallized for bonding and wire attachment.

What is the recommended die attach method for SIDC50D60C6X1SA1?

Infineon specifies two validated die attach methods: electrically conductive epoxy (for low-temperature assembly) or soft solder (e.g., SnAgCu). Anode metallization is AlSiCu (8.52 × 4.74 mm²); cathode is Ni/Ag. Both support reliable thermal and electrical interface in press-pack or soldered module architectures up to 175 °C junction temperature.

Does SIDC50D60C6X1SA1 require special ESD handling?

Yes. SIDC50D60C6X1SA1 is classified as an electrostatic discharge sensitive device per MIL-STD-883. Handling requires grounded workstations, ionized air, wrist straps, and ESD-safe packaging. The photoimide passivation protects the surface, but gate oxide integrity depends on strict ESD control during die placement and wire bonding.

Can SIDC50D60C6X1SA1 be used outside its specified 600 V rating?

No. The datasheet specifies V_R = 600 V as the maximum repetitive peak reverse voltage. Operation above this rating risks avalanche breakdown and irreversible degradation. Derating is required for reliability: typical design practice limits steady-state reverse voltage to ≤480 V (80% of V_R) in systems with voltage transients or poor snubbing.

SIDC50D60C6X1SA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Discontinued at Digi-Key

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 200A

Voltage - Forward (Vf) (Max) @ If:: 1.9 V @ 200 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 27 µA @ 600 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Sawn on foil

Operating Temperature - Junction:: -40°C ~ 175°C

SIDC50D60C6X1SA1 FAQ

1.How can I place an order for SIDC50D60C6X1SA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIDC50D60C6X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIDC50D60C6X1SA1 reliable?

The price and inventory of SIDC50D60C6X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC50D60C6X1SA1 is usually 5 days.

3.What payment methods are accepted for SIDC50D60C6X1SA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC50D60C6X1SA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIDC50D60C6X1SA1?

SIDC50D60C6X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIDC50D60C6X1SA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIDC50D60C6X1SA1?

For technical support, including SIDC50D60C6X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC50D60C6X1SA1 requirements.

6.How does Aetrix verify that SIDC50D60C6X1SA1 is sourced from the original manufacturer or authorized distributors?

All SIDC50D60C6X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC50D60C6X1SA1 meets industry standards.

7.What is the process for return or replacement of SIDC50D60C6X1SA1?

All SIDC50D60C6X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC50D60C6X1SA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIDC50D60C6X1SA1 part is unused and in its original packaging.

Return procedure for SIDC50D60C6X1SA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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